MICROSEMI APT15D120BCT

1
3
2
1 - Anode 1
2 - Common Cathode
Back of Case - Cathode
3 - Anode 2
APT15D120BCT
1200V 15A
APT15D120BCTG 1200V 15A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• Popular TO-247 Package or
• Cooler Operation
•
•
•
•
•
-Switchmode Power Supply
-Inverters
Free Wheeling Diode
-Motor Controllers
-Converters
Snubber Diode
Uninterruptible Power Supply (UPS)
Induction Heating
High Speed Rectifiers
Surface Mount D3PAK Package
• Low Forward Voltage
• Higher Reliability Systems
• High Blocking Voltage
• Increased System Power
• Low Leakage Current
All Ratings: TC = 25°C unless otherwise specified.
MAXIMUM RATINGS
Symbol
VR
APT15D120BCT(G)
Characteristic / Test Conditions
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 98°C, Duty Cycle = 0.5)
IFSM
TJ,TSTG
TL
UNIT
Maximum D.C. Reverse Voltage
VRRM
IF(RMS)
Density
1200
Volts
15
RMS Forward Current (Square wave, 50% duty)
24
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
110
Amps
-55 to 150
Operating and StorageTemperature Range
°C
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
VF
MIN
Forward Voltage
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
TYP
MAX
IF = 15A
2.0
2.5
IF = 30A
2.3
IF = 15A, TJ = 125°C
1.8
Volts
VR = VR Rated
250
VR = VR Rated, TJ = 125°C
500
Microsemi Website - http://www.microsemi.com
17
UNIT
μA
pF
053-0022 Rev B 10-2009
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT15D120BCT(G)
Characteristic
Test Conditions
MIN
TYP
MAX
UNIT
trr
Reverse Recovery Time I = 1A, di /dt = -100A/μs, V = 30V, T = 25°C
F
F
R
J
-
32
trr
Reverse Recovery Time
-
260
Qrr
Reverse Recovery Charge
-
480
-
4
-
370
ns
-
1300
nC
-
9
-
140
-
2000
-
28
MIN
TYP
IRRM
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 15A, diF/dt = -200A/μs
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 800V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 15A, diF/dt = -200A/μs
VR = 800V, TC = 125°C
IF = 15A, diF/dt = -1000A/μs
Maximum Reverse Recovery Current
VR = 800V, TC = 125°C
ns
nC
-
-
Amps
Amps
ns
nC
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
RθJC
Junction-to-Case Thermal Resistance
RθJA
Junction-to-Ambient Thermal Resistance
WT
Torque
MAX
1.18
40
Package Weight
oz
5.9
g
10
lb•in
1.1
N•m
Microsemi Reserves the right to change, without notice, the specifications and information contained herein.
0.9
1.0
0.5
Note:
0.40
0.3
t1
t2
0.20
SINGLE PULSE
0.1
0.05
0
053-0022 Rev B 10-2009
0.7
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
1.20
0.60
10
-5
10-4
°C/W
0.22
Maximum Mounting Torque
0.80
UNIT
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TYPICAL PERFORMANCE CURVES
50
APT15D120BCT(G)
500
T =125°C
J
V =800V
40
30
20
TJ = 150°C
TJ = 25°C
10
TJ = 125°C
0
trr, REVERSE RECOVERY TIME
(ns)
IF, FORWARD CURRENT
(A)
30A
0.5
1
1.5
2
2.5
3
3.5
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
100
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE(A/μs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
0
200
R
3000
30A
2500
2000
15A
1500
1000
7.5A
500
0
200
400
600
800
1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
1.2
trr
1.0
IRRM, REVERSE RECOVERY CURRENT
(A)
35
T =125°C
J
V =800V
T =125°C
J
V =800V
30A
R
30
25
20
15
15A
10
7.5A
5
0
400
600
800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/μs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
0
200
30
Qrr
Duty cycle = 0.5
T =150°C
J
25
IRRM
0.8
trr
20
0.6
Qrr
IF(AV) (A)
Qrr, REVERSE RECOVERY CHARGE
(nC)
7.5A
200
0
0
0
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
15A
300
TJ = -55°C
3500
15
0.4
10
0.2
5
0.0
R
400
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
160
120
100
80
60
40
20
0
.7 1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-0022 Rev B 10-2009
CJ, JUNCTION CAPACITANCE
(pF)
140
APT15D120BCT(G)
Vr
diF /dt Adjust
+18V
APT10035LLL
0V
D.U.T.
30μH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 (BCT) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Common Cathode
20.80 (.819)
21.46 (.845)
3.55 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
053-0022 Rev B 10-2009
5.38 (.212)
6.20 (.244)
Anode 1
Common Cathode
Anode 2
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.