BRIGHT BPT

BRIGHT LED ELECTRONICS CORP.
BPT-NP23C2
SINCE 1981
SIDE- LOOK PACKAGE
PHOTOTRANSISTOR
● Package Dimensions:
● Features
1.
Wide range of collector current.
2.
High sensitivity.
3.
Low cost plastic package.
1.7(.067)
2.5(.098)
3.8(.150)
4.0(.157)
4. Lens Appearance: Water Clear.
4.6(.181)
5. This product doesn't contain restriction
1.5(.059)
1.6(.063)
substance, comply ROHS standard
4.5(.177)
2.9(.114)
1.8(.071)
0.65(.026)
14.0(.551) MIN.
0.5(.020)
● Description
The BPT-NP23C2 is a NPN silicon phototransistor
1
1.0(.039) MIN.
2
0.5(.019)
mounted in a lensed ,water clear plastic package .
2.54(.100)
The lensing effect of the package allows an
1. Emitter
2. Collector
acceptance half view angle of 50∘that is
measured from the optical axis to the half
power point .
NOTES:
1.All dimensions are in millimeters (inches).
2.Tolerance is ±0.25mm (0.01’’) unless otherwise specified.
3.Lead spacing is measured where the leads emerge from the package
4.Specifications are subject to change without notice
● Absolute Maximum Ratings(Ta=25℃)
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector- Emitter Voltage
30
V
Emitter- Collector Voltage
5
V
Operating Temperature
-45℃~+85℃
Storage Temperature Range
-45℃~+100℃
Lead Soldering Temperature
260℃ for 5 seconds
Rev:2.2
Page1 of 3
BRIGHT LED ELECTRONICS CORP.
BPT-NP23C2
SINCE 1981
● Electrical Characteristics (TA=25℃ unless otherwise noted)
PARAMETER
Collector- Emitter
Breakdown Voltage
Emitter-Collector
Breakdown Voltage
Collector- Emitter
Saturation Voltage
SYMBOL
MIN
TYP
MAX
UNITS
V(BR)CEO
30
-
-
V
IC=1 mA
V(BR)ECO
5
-
-
V
IR=0.1mA Ee=0 mW/cm2
VCE(SAT)
-
-
0.5
V
IC=0.1 mA Ee=1.0mW/cm2
Rise Time
Tr
-
25
-
Fall Time
Tf
-
25
-
Collector Dark Current
Id
-
-
IC (ON)
-
13
Light Current
TEST CONDITIONS
Ee=0mW/cm2
μS
VCE =5V RL=1KΩ
F=100HZ
100
nA
VCE=10V Ee=0 mW/cm2
-
mA
VCE=5V Ee=1.0mW/cm2
● Typical Optical-Electrical Characteristic Curves
FIG.1 Dark Current Vs.
Ambient Temperature
(uA)
1000
100
100
80
Power Dissipation Pd
10000
(mW)
120
Dark Current
10
1
0.1
0.01
0
20
60 80 100
40
Ambient Temperature
60
40
20
0
120 (°C)
FIG.2 Power Dissipation Vs.
Ambient Temperature
-25
FIG.3 Rise And Fall Time Vs.
Load Resistance
(us)
20
Rise and Fall Time
Relative Collector Current
F=100Hz
Tf
Tr
8
4
0
0.2
125 (°C)
2.5
12
0
25
50 75 100
Ambient Temperature
FIG.4 Relative Collector Current Vs.
Irradiance
Vcc=5V
16
0
0.4
0.6
0.8
1.0 (K )
Vce=5V
2.0
1.5
1.0
0.5
0
0
0.5
1.0
1.5
2.0 2.5
2
3.0 (mW/cm )
Irradiance
Load Resistance
Rev:2.2
Page2 of 3
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BPT-NP23C2
● Tapping and packaging specifications(Units: mm)
● Packaging Bag Dimensions
Notes:
1、1000pcs per bag, 8Kpcs per box.
2、All dimensions are in millimeters(inches).
3、Specifications are subject to change without notice.
Rev:2.2
Page3 of 3
BRIGHT LED ELECTRONICS CORP.
BPT-NP23C2
SINCE 1981
Phototransistor Specification
Commodity: Phototransistor
Collector Current Bin Limits (At 1mW/ cm2)
BIN CODE
Min.(mA)
Max.(mA)
P8
0.799
0.985
P9
0.985
1.050
P10
1.050
1.250
P11
1.250
1.400
P12
1.400
1.550
P13
1.550
1.700