CEL UPG2150T5L_07

DATA SHEET
GaAs INTEGRATED CIRCUIT
+PG2150T5L
SP3T SWITCH FOR Bluetooth
TM
AND 802.11b/g
DESCRIPTION
The +PG2150T5L is a GaAs MMIC SP3T switch which was developed for Bluetooth and wireless LAN.
This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.
This device is housed in a 12-pin plastic TSQFN (Thin Small Quad Flat Non-leaded) package. And this package is
able to high-density surface mounting.
FEATURES
• Operation frequency
: fopt = 0.5 to 2.5 GHz
• Control voltage
: Vcont (H) = 2.3 to 3.6 V (2.85 V TYP.)
: Vcont (L) = <0.2 to 0.2 V (0 V TYP.)
• Low insertion loss
: Lins3 = 0.50 dB TYP. @ f = 2.5 GHz, ANT to RF1, 2, Vcont (H) = 2.85 V, Vcont (L) = 0 V
: Lins6 = 0.60 dB TYP. @ f = 2.5 GHz, ANT to RF3, Vcont (H) = 2.85 V, Vcont (L) = 0 V
• High isolation
: ISL3 = 35 dB TYP. @ f = 2.5 GHz, ANT to RF3, On port ANT to RF1, 2, RF1 to
RF3, On port ANT to RF1, Vcont (H) = 2.85 V, Vcont (L) = 0 V
: ISL6 = 18 dB TYP. @ f = 2.5 GHz, ANT to RF1, On port ANT to RF2, 3, ANT to
RF2, On port ANT to RF1, 3, Vcont (H) = 2.85 V, Vcont (L) = 0 V
• Handling power
: Pin (1 dB) = +31.0 dBm TYP. @ f = 2.5 GHz, ANT to RF1, 2, Vcont (H) = 2.85 V,
Vcont (L) = 0 V
: Pin (1 dB) = +25.0 dBm TYP. @ f = 2.5 GHz, ANT to RF3, Vcont (H) = 2.85 V,
Vcont (L) = 0 V
• High-density surface mounting : 12-pin plastic TSQFN package (2.0 = 2.0 = 0.37 mm)
APPLICATIONS
• Antenna switch for Bluetooth and 802.11b/g
ORDERING INFORMATION
Part Number
Order Number
+PG2150T5L-E2
+PG2150T5L-E2-A
Package
Marking
12-pin plastic TSQFN
2150
(Pb-Free)
Supplying Form
% Embossed tape 8 mm wide
% Pin 10, 11, 12 face the perforation side of the tape
% Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: +PG2150T5L-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. PG10653EJ01V0DS (1st edition)
Date Published February 2007 NS CP(N)
2007
+PG2150T5L
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
12
11
2
3
4
5
11
12
10
2150
1
(Bottom View)
(Top View)
10
10
11
12
9
1
9
9
1
8
2
8
8
2
7
3
7
7
3
5
4
6
6
6
5
4
Pin No.
Pin Name
1
ANT
2
GND
3
Vcont2
4
RF2
5
GND
6
RF3
7
Vcont3
8
GND
9
Vcont1
10
RF1
11
N.C.
12
N.C.
Remark Exposed pad : GND
TRUTH TABLE
Vcont1
Vcont2
Vcont3
ANT<RF1
ANT<RF2
ANT<RF3
High
Low
Low
ON
OFF
OFF
Low
High
Low
OFF
ON
OFF
Low
Low
High
OFF
OFF
ON
ABSOLUTE MAXIMUM RATINGS (TA = +25$C, unless otherwise specified)
Parameter
Symbol
Ratings
<6.0 to +6.0
Unit
Note
Switch Control Voltage
Vcont
V
Input Power1 (ANT<RF1, ANT<RF2)
Pin1
+31.5
dBm
Input Power2 (ANT<RF3)
Pin2
+25.5
dBm
Operating Ambient Temperature
TA
<45 to +85
$C
Storage Temperature
Tstg
<55 to +150
$C
Note «Vcont (H) < Vcont (L)« ) 6.0 V
RECOMMENDED OPERATING RANGE (TA = +25$C, unless otherwise specified)
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
fopt
0.5
<
2.5
GHz
Switch Control Voltage (H)
Vcont (H)
2.3
2.85
3.6
V
Switch Control Voltage (L)
Vcont (L)
<0.2
0
0.2
V
Operating Frequency
2
Data Sheet PG10653EJ01V0DS
+PG2150T5L
ELECTRICAL CHARACTERISTICS
(TA = +25$C, Vcont (H) = 2.85 V, Vcont
specified)
Parameter
(L)
= 0 V, DC blocking capacitors = 56 pF, unless otherwise
Symbol
Pass
ANT to RF1, 2
Test Conditions
MIN.
TYP.
MAX.
Unit
f = 0.5 to 1.0 GHz
<
0.40
0.55
dB
Insertion Loss 1
Lins1
Insertion Loss 2
Lins2
f = 1.0 to 2.0 GHz
<
0.45
0.60
dB
Insertion Loss 3
Lins3
f = 2.0 to 2.5 GHz
<
0.50
0.65
dB
Insertion Loss 4
Lins4
f = 0.5 to 1.0 GHz
<
0.45
0.60
dB
Insertion Loss 5
Lins5
f = 1.0 to 2.0 GHz
<
0.55
0.70
dB
Insertion Loss 6
Lins6
f = 2.0 to 2.5 GHz
<
0.60
0.75
dB
Isolation 1
ISL1
f = 0.5 to 1.0 GHz
29
32
<
dB
f = 1. 0 t o 2. 0 G H z
29
32
<
dB
f = 2 . 0 t o 2. 5 G H z
30
35
<
dB
f = 0.5 to 1.0 GHz
23
26
<
dB
f = 1. 0 t o 2. 0 G H z
17
20
<
dB
f = 2 . 0 t o 2. 5 G H z
15
18
<
dB
ANT to RF3
ANT to RF3
On port ANT to
Isolation 2
I S L2
RF1 , 2
RF1 to RF3
Isolation 3
ISL3
On port A NT to
RF1
Isolation 4
ISL4
ANT to RF1
On port ANT to
Isolation 5
I S L5
RF2 , 3
ANT to RF2
Isolation 6
ISL6
On port A NT to
RF1, 3
Input Return Loss
RLin
ANT to RF1, 2, 3
f = 0.5 to 2.5 GHz
15
20
<
dB
Output Return Loss
RLout
ANT to RF1, 2, 3
f = 0.5 to 2.5 GHz
15
20
<
dB
ANT to RF1, 2
f = 1.0 GHz
+28.0
+31.0
<
dBm
f = 2.0 GHz
+28.0
+31.0
<
dBm
f = 2. 5 G H z
+ 28 . 0
+ 3 1. 0
<
dBm
f = 1.0 GHz
+22.0
+25.0
<
dBm
f = 2. 0 G H z
+ 22 . 0
+ 2 5. 0
<
dBm
f = 2. 5 G H z
+ 22 . 0
+ 2 5. 0
<
dBm
1 dB Loss Compression
Input Power
Pin (1 dB)
Note
ANT to RF3
Switch Control Current
Icont
ANT to RF1, 2, 3
RF None
<
0.05
1.0
+A
Switch Control Speed
tSW
ANT to RF1, 2, 3
50% CTL to
<
50
<
ns
90/10% RF
Note Pin (1 dB) is measured the input power level when the insertion loss increases more 1 dB than that of linear
range.
Data Sheet PG10653EJ01V0DS
3
+PG2150T5L
EVALUATION CIRCUIT
RF1
56 pF
12
11
10
56 pF
ANT
9
1
Vcont1
1 000 pF
Vcont2
2
8
3
7
1 000 pF
Vcont3
1 000 pF
4
5
6
56 pF
56 pF
RF2
RF3
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
4
Data Sheet PG10653EJ01V0DS
+PG2150T5L
MOUNTING PAD LAYOUT DIMENSIONS
12-PIN PLASTIC TSQFN (UNIT: mm)
0.38
0.77
0.77
0.38
0.5
0.77
0.77
0.38
12–0.23
0.5
0.99
0.5
0.38
0.5
0.99
Remark The mounting pad layouts in this document are for reference only.
Data Sheet PG10653EJ01V0DS
5
+PG2150T5L
PACKAGE DIMENSIONS
12-PIN PLASTIC TSQFN (UNIT: mm)
0.37+0.03
–0.05
2.0±0.1
2.0±0.1
(Bottom View)
0.50±0.06
0.23+0.07
–0.05
0.94±0.1
(C 0.17±0.07)
0.23±0.1
0.94±0.1
Remark ( ) : Reference value
6
Data Sheet PG10653EJ01V0DS
+PG2150T5L
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Wave Soldering
S o l d e r i n g C ond ition s
C on ditio n S ymb ol
Peak temperature (package surface temperature)
: 260$C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220$C or higher
: 60 seconds or less
Preheating time at 120 to 180$C
: 120(30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260$C or below
Time at peak temperature
: 10 seconds or less
IR260
WS260
Preheating temperature (package surface temperature) : 120$C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350$C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PG10653EJ01V0DS
7
+PG2150T5L
Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A.
% The information in this document is current as of February, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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% Descriptions of circuits, software and other related information in this document are provided for illustrative
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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
8
Data Sheet PG10653EJ01V0DS
+PG2150T5L
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
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CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
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that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
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