CEL UPG2160T5K

GaAs INTEGRATED CIRCUIT
µPG2160T5K
L, S-BAND SINGLE CONTROL SPDT SWITCH
DESCRIPTION
The µPG2160T5K is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) switch which was developed
for mobile phone and other L, S-band applications.
This device can operate frequency from 0.5 to 3.0 GHz, with low insertion loss and high isolation.
This device is housed in a 6-pin plastic TSSON (Thin Shrink Small Out-line Non-leaded) package, and is suitable
for high-density surface mounting.
FEATURES
• Supply voltage
• Switch control voltage
•
•
•
•
: VDD = 2.4 to 2.8 V (2.6 V TYP.)
: Vcont (H) = 2.4 to VDD (2.6 V TYP.)
: Vcont (L) = −0.2 to 0.2 V (0 V TYP.)
Low insertion loss
: Lins1 = 0.30 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
: Lins2 = 0.35 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
: Lins3 = 0.40 dB TYP. @ f = 2.0 to 2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
: Lins4 = 0.50 dB TYP. @ f = 2.5 to 3.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
High isolation
: ISL1 = 25 dB TYP. @ f = 0.5 to 1.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
: ISL2 = 18 dB TYP. @ f = 1.0 to 2.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
: ISL3 = 17 dB TYP. @ f = 2.0 to 2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
: ISL4 = 13 dB TYP. @ f = 2.5 to 3.0 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
Handling power
: Pin (0.1 dB) = +21.0 dBm TYP. @ f = 2.0/2.5 GHz, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V
High-density surface mounting : 6-pin plastic TSSON package (1.0 × 1.0 × 0.37 mm)
APPLICATIONS
• L, S-band digital cellular or cordless telephone
TM
• W-LAN, WLL and Bluetooth etc.
ORDERING INFORMATION
Part Number
µPG2160T5K-E2
Order Number
µPG2160T5K-E2-A
Package
6-pin plastic TSSON
(Pb-Free)
Note
Marking
G4
Supplying Form
• Embossed tape 8 mm wide
• Pin 1, 6 face the perforation side of the tape
• Qty 5 kpcs/reel
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2160T5K-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10635EJ01V0DS (1st edition)
Date Published September 2006 NS CP(K)
2006
µPG2160T5K
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM
(Top View)
1
G4
2
6
1
6
6
1
5
2
5
5
2
4
3
(Bottom View)
(Top View)
4
3
4
3
Pin No.
Pin Name
1
OUTPUT1
2
GND
3
OUTPUT2
4
Vcont
5
INPUT
6
VDD
TRUTH TABLE
Vcont
INPUT−OUTPUT1
INPUT−OUTPUT2
High
OFF
ON
Low
ON
OFF
ABSOLUTE MAXIMUM RATINGS (TA = +25°C, unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Supply Voltage
VDD
+6.0
V
Switch Control Voltage
Vcont
+6.0
V
Input Power
Pin
+26
dBm
Operating Ambient Temperature
TA
−45 to +85
°C
Storage Temperature
Tstg
−55 to +135
°C
RECOMMENDED OPERATING RANGE (TA = +25°C, unless otherwise specified)
Parameter
Supply Voltage
Note
Switch Control Voltage (H)
Switch Control Voltage (L)
Note
Symbol
MIN.
TYP.
MAX.
Unit
VDD
2.4
2.6
2.8
V
Vcont (H)
2.4
2.6
VDD
V
Vcont (L)
−0.2
0
0.2
V
Note Vcont (H) ≤ VDD
2
Data Sheet PG10635EJ01V0DS
µPG2160T5K
ELECTRICAL CHARACTERISTICS
(TA = +25°C, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V, DC cut capacitors = 56 pF, unless otherwise
specified)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
dB
Insertion Loss 1
Lins1
f = 0.5 to 1.0 GHz
−
0.30
0.45
Insertion Loss 2
Lins2
f = 1.0 to 2.0 GHz
−
0.35
0.50
Insertion Loss 3
Lins3
f = 2.0 to 2.5 GHz
−
0.40
0.55
Insertion Loss 4
Lins4
f = 2.5 to 3.0 GHz
−
0.50
0.65
Isolation 1
ISL1
f = 0.5 to 1.0 GHz
22
25
−
Isolation 2
ISL2
f = 1.0 to 2.0 GHz
15
18
−
Isolation 3
ISL3
f = 2.0 to 2.5 GHz
14
17
−
Isolation 4
ISL4
f = 2.5 to 3.0 GHz
10
13
−
Input Return Loss
RLin
f = 0.5 to 3.0 GHz
15
20
−
dB
Output Return Loss
RLout
f = 0.5 to 3.0 GHz
15
20
−
dB
+18.0
+21.0
−
dBm
0.1 dB Loss Compression
Input Power
Pin (0.1 dB)
f = 2.0/2.5 GHz
dB
Note
2nd Harmonics
2f0
f = 2.0/2.5 GHz, Pin = +10 dBm
65
75
−
dBc
3rd Harmonics
3f0
f = 2.0/2.5 GHz, Pin = +10 dBm
65
75
−
dBc
Supply Current
IDD
No signal
−
50
100
µA
Switch Control Current
Icont
−
4
20
µA
Switch Control Speed
tSW
−
150
−
ns
50% CTL to 90/10% RF
Note Pin (0.1 dB) is measured the input power level when the insertion loss increases more 0.1 dB than that of linear
range.
Caution This device is used it is necessary to use DC cut capacitors.
Data Sheet PG10635EJ01V0DS
3
µPG2160T5K
EVALUATION CIRCUIT
VDD
INPUT
Vcont
1 000 pF
1 000 pF
C0
6
5
4
1
2
3
C0
OUTPUT1
C0
OUTPUT2
Remark C0 : 56 pF
The application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
4
Data Sheet PG10635EJ01V0DS
µPG2160T5K
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
Vcont
INPUT
G4
C
3
C
5
OUTPUT2
C1
C
2
C
4
OUTPUT1
VDD
USING THE NEC EVALUATION BOARD
Symbol
C1, C2, C3
C4, C5
Values
56 pF
1 000 pF
Data Sheet PG10635EJ01V0DS
5
µPG2160T5K
TYPICAL CHARACTERISTICS (TA = +25°C, VDD = 2.6 V, Vcont (H) = 2.6 V, Vcont (L) = 0 V, DC cut
capacitors = 56 pF, using test fixture, unless otherwise specified)
INPUT-OUTPUT1
INSERTION LOSS vs. FREQUENCY
1.5
3:
1.0
4:
0.5
5:
1
–0.5
2
3
5
–1.5
2.5
1:
–0.255 dB
2.0
2:
–0.304 dB
1.5
3:
–0.354 dB
1.0
4:
–0.408 dB
0.5
5:
–0.506 dB
0
–2.0
1.9
2.5
3.1
3.0 GHz
1
2
3
4
5
0.7
1.3
1.9
2.5
3.1
Frequency f (GHz)
INPUT-OUTPUT1
ISOLATION vs. FREQUENCY
INPUT-OUTPUT2
ISOLATION vs. FREQUENCY
2:
3:
20
4:
10
5:
0
0.5 GHz
–24.659 dB
1.0 GHz
–19.114 dB
2.0 GHz
–17.362 dB
2.5 GHz
–15.87 dB
3.0 GHz
–10
1
3
4
5
Isolation ISL (dB)
–30.53 dB
1:
–30
50
1:
–30.378 dB
40
2:
–24.496 dB
30
3:
–18.545 dB
20
4:
–17.212 dB
10
5:
–15.717 dB
–20
–40
–50
0.1
1.9
2.0 GHz
2.5 GHz
3.0 GHz
–10
–40
1.3
1.0 GHz
0
–50
0.1
0.7
0.5 GHz
1
–30
2
2.5
3.1
0.7
1.3
1.9
5
4
3
2
2.5
3.1
Frequency f (GHz)
Frequency f (GHz)
INPUT-OUTPUT1
INPUT RETURN LOSS vs. FREQUENCY
INPUT-OUTPUT2
INPUT RETURN LOSS vs. FREQUENCY
50
1:
40
2:
30
3:
20
4:
10
5:
0
–10
–18.298 dB
50
1:
–18.557 dB
0.5 GHz
–22.409 dB
1.0 GHz
–28.233 dB
2.0 GHz
–31.992 dB
2.5 GHz
–27.286 dB
3.0 GHz
40
2:
–23.14 dB
30
3:
–29.248 dB
20
4:
–28.445 dB
10
5:
–23.756 dB
1
–20
2
–30
3
–40
–50
0.1
0.7
1.3
1.9
4
2.5
5
0.5 GHz
1.0 GHz
2.0 GHz
2.5 GHz
3.0 GHz
0
–10
1
–20
–30
2
3
–40
3.1
–50
0.1
0.7
1.3
1.9
Frequency f (GHz)
Frequency f (GHz)
Remark The graphs indicate nominal characteristics.
6
2.5 GHz
Frequency f (GHz)
30
–20
2.0 GHz
–1.5
–2.5
0.1
1.3
1.0 GHz
–1.0
–2.0
0.7
0.5 GHz
–0.5
–2.5
0.1
40
Isolation ISL (dB)
4
–1.0
50
Input Return Loss RLin (dB)
0.5 GHz
–0.305 dB
1.0 GHz
–0.355 dB
2.0 GHz
–0.408 dB
2.5 GHz
–0.502 dB
3.0 GHz
Insertion Loss Lins (dB)
2:
0
–0.255 dB
1:
2.0
Input Return Loss RLin (dB)
Insertion Loss Lins (dB)
2.5
INPUT-OUTPUT2
INSERTION LOSS vs. FREQUENCY
Data Sheet PG10635EJ01V0DS
4
2.5
5
3.1
µPG2160T5K
INPUT-OUTPUT2
OUTPUT RETURN LOSS vs. FREQUENCY
INPUT-OUTPUT1
OUTPUT RETURN LOSS vs. FREQUENCY
–18.38 dB
50
1:
–18.646 dB
0.5 GHz
–22.911 dB
1.0 GHz
–28.715 dB
2.0 GHz
–30.049 dB
2.5 GHz
–25.211 dB
3.0 GHz
40
2:
–23.332 dB
30
3:
–31.078 dB
20
4:
–28.398 dB
10
5:
–23.042 dB
1:
40
2:
30
3:
20
4:
10
5:
0
–10
1
–20
2
–30
3
–40
–50
0.1
0.7
1.3
1.9
4
2.5
5
3.1
Output Return Loss RLout (dB)
Output Return Loss RLout (dB)
50
0.5 GHz
1.0 GHz
2.0 GHz
2.5 GHz
3.0 GHz
0
–10
1
–20
–30
5
2
3
–40
–50
0.1
Frequency f (GHz)
0.7
1.3
1.9
4
2.5
3.1
Frequency f (GHz)
OUTPUT POWER vs. INPUT POWER
+35
Output Power Pout (dBm)
f = 2.0 GHz
+30
+25
+20
+15
+10
+5
+8
+12
+16
+20
+24
+28
Input Power Pin (dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PG10635EJ01V0DS
7
µPG2160T5K
MOUNTING PAD DIMENSIONS
6-PIN PLASTIC TSSON (UNIT: mm)
0.29
0.29
0.31
6–0.22
0.35
0.35
0.31
Remark The mounting pad layouts in this document are for reference only.
8
Data Sheet PG10635EJ01V0DS
µPG2160T5K
PACKAGE DIMENSIONS
6-PIN PLASTIC TSSON (UNIT: mm)
(Top View)
1.0±0.1
1.0±0.1
(Bottom View)
0.15+0.07
–0.05
0.45 ±0.1
0.35±0.06
0.35±0.06
1.0±0.1
0.15+0.07
–0.05
1.0±0.1
0.13±0.07
0.175±0.075
0.37+0.03
–0.05
0.23±0.07
Data Sheet PG10635EJ01V0DS
9
µPG2160T5K
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions.
For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Wave Soldering
Soldering Conditions
Condition Symbol
Peak temperature (package surface temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220°C or higher
: 60 seconds or less
Preheating time at 120 to 180°C
: 120±30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (molten solder temperature)
: 260°C or below
Time at peak temperature
: 10 seconds or less
IR260
WS260
Preheating temperature (package surface temperature) : 120°C or below
Partial Heating
Maximum number of flow processes
: 1 time
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Peak temperature (terminal temperature)
: 350°C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
Caution Do not use different soldering methods together (except for partial heating).
10
Data Sheet PG10635EJ01V0DS
HS350
µPG2160T5K
Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A.
• The information in this document is current as of September, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1
Data Sheet PG10635EJ01V0DS
11
µPG2160T5K
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
For further information, please contact
NEC Compound Semiconductor Devices Hong Kong Limited
E-mail: contact@ncsd-hk.necel.com
Hong Kong Head Office TEL: +852-3107-7303
FAX: +852-3107-7309
Taipei Branch Office
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859
Korea Branch Office
TEL: +82-2-558-2120
FAX: +82-2-558-5209
NEC Electronics (Europe) GmbH
http://www.eu.necel.com/
TEL: +49-211-6503-0
FAX: +49-211-6503-1327
California Eastern Laboratories, Inc.
http://www.cel.com/
TEL: +1-408-988-3500
FAX: +1-408-988-0279
Compound Semiconductor Devices Division
NEC Electronics Corporation
URL: http://www.ncsd.necel.com/
0604
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile: (408) 988-0279
Subject: Compliance with EU Directives
CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant
with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
2003/11/EC Restriction on Penta and Octa BDE.
CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates
that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS
Concentration Limit per RoHS
(values are not yet fixed)
Concentration contained
in CEL devices
-A
Not Detected
Lead (Pb)
< 1000 PPM
Mercury
< 1000 PPM
Not Detected
Cadmium
< 100 PPM
Not Detected
Hexavalent Chromium
< 1000 PPM
Not Detected
PBB
< 1000 PPM
Not Detected
PBDE
< 1000 PPM
Not Detected
-AZ
(*)
If you should have any additional questions regarding our devices and compliance to environmental
standards, please do not hesitate to contact your local representative.
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