General Purpose Transistor SMD Diodes Specialist MMBT3904-G (NPN) RoHS Device Features -Epitaxial planar die construction SOT-23 -As complementary type, the PNP 0.119 (3.00) 0.110 (2.80) transistor MMBT3906-G is recommended 3 0.056 (1.40) 0.047 (1.20) 1 2 0.083 (2.10) 0.006 (0.15) 0.002 (0.05) 0.066 (1.70) Collector 3 0.103 (2.60) 0.086 (2.20) 0.044 (1.10) 0.035 (0.90) 1 Base 0.006 (0.15) max 0.020 (0.50) 0.013 (0.35) 2 Emitter 0.007 (0.20) min Dimensions in inches and (millimeter) O Maximum Ratings(at TA=25 C unless otherwise noted) Max Unit V CBO 60 V V CEO 40 V V EBO 6 V Collector current-Continuous IC 0.2 A Col lec tor di ssipa tioi n PC 0. 2 Symbol Parameter Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage T STG , T J St or ag e tempe rat ur e an d jun ction tempe rat ur e Typ Min W +1 50 -55 O C O Electrical Characteristics (at TA=25 C unless otherwise noted) Parameter Conditions Symbol Min Max Unit Collector-Base breakdown voltage I C =100μA , I E =0 V (BR)CBO 60 V Collector-Emitter breakdown voltage I C =1mA , I B =0 V (BR)CEO 40 V Emitter-Base breakdown voltage I E =100μA , I C =0 V (BR)EBO 6 V Collector cut-off current V CB =60V , I E =0 I CBO 0.1 µA Collector cut-off current V CE =40V , I B =0 I CEO 0.1 µA Emitter cut-off current V EB =5V , I C =0 I EBO 0.1 µA V CE =1V , I C =10mA h FE(1) 100 60 DC current gain V CE =1V , I C =50mA Collector-Emitter saturation voltage I C =50mA , I B =5mA h FE(2) V CE (sat) Base-Emitter saturation voltage I C =50mA , I B =5mA V BE (sat) V CE =20V , I C =10mA Transition frequency f=100MH Z fT 300 0.3 V 0.95 V 250 Mhz Delay time V CC =3.0V dc , V BE =-0.5V dc td 35 nS Rise time I C =10mAdc , I B1 =1.0mA dc tr 35 nS Storage time V CC =3.0V dc , I C =10mA dc ts 200 nS Fall time I B1 =I B2 =1.0mA dc tf 50 nS REV:A QW-BTR01 Page 1 General Purpose Transistor SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (MMBT3904-G) 500 VCE=5V 400 oo 125 C 300 o 125 25 oC C 200 100 -40 125ooCC 0 0.1 10 1 100 Fig.2 Collector-Emitter saturation voltage V.S. Collector current V CE(sat)- Collector-Emitter voltage(V) h FE- Typical pulsed current gain Fig.1 Typical pulsed current gain V.S. Collector current ß=10 0.15 125 oC 0.10 25 oC 0.05 o -40 C 0.1 1 Ic- Collector current (mA) o -40 C 0.8 25 oC o 125 C 0.4 1 0.1 10 100 V BE ( ON )- B a se-emi t ter voltag e ( V ) V B E (sat ) - B a s e -e m i tter v o l ta ge ( V ) 1 V CE =5V -40 125ooCC 0.8 25 ooC 125 0.6 125ooCC 125 0.4 0.2 0.1 1 10 100 Ic - Collector current (mA) Ic - Collector current (mA) Fig.5 Collector-cutoff current V.S. Ambient temperature Fig.6 Capacitance V.S. Reverse bias voltage 500 100 10 f=1.0MHz V CB =30V Capacitance (pF) I CBO - Collector current (nA) ß=10 0.6 100 Fig.4 Base-Emitter ON voltage V.S. Collector current Fig.3 Base-Emitter saturatioin voltage V.S. Collector current 1 10 Ic- Collector current (mA) 10 1 0.1 5 4 3 C ibo 2 C obo 25 50 75 100 125 T A - Ambient temperature ( oC) 150 1 0.1 1 10 100 Reverse bias voltage (V) REV:A QW-BTR01 Page 2