Cree® EZ400™ LED Data Sheet CxxxEZ400-Sxx000 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 100 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications, such as general illumination, automotive lighting and LCD backlighting. FEATURES APPLICATIONS • • EZBright Power Chip LED Rf Performance – 60 mW min. @ 150 mA – 450 & 460 nm General Illumination – Automobile • Lambertian Radiation – Aircraft • Conductive Epoxy, Solder Paste or Preforms, – Decorative Lighting or Flux Eutectic Attach – Task Lighting – Outdoor Illumination • Thin 100-μm Chip • Low Forward Voltage – 3.5 V Typical at 150 mA • White LEDs • Single Wire Bond Structure • Crosswalk Signals • Maximum DC Forward Current - 200 mA • Backlighting CxxxEZ400-Sxx000 Chip Diagram .CPR3DJ Rev Data Sheet: Top View Die Cross Section Bottom View EZBright LED Chip 380 x 380 μm2 Backside Metallization Gold Bond Pad 100 μm Cathode (-) t = 100 μm Anode (+); 3 μm AuSn Subject to change without notice. www.cree.com Maximum Ratings at TA = 25°C Note 1 CxxxEZ400-Sxx000 DC Forward Current 200 mA Peak Forward Current 350 mA LED Junction Temperature Note 3 145°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +120°C Typical Electrical/Optical Characteristics at TA = 25°C, If = 150 mA Part Number Forward Voltage (VF, V) Note 2 Reverse Current [I(Vr=5 V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450EZ600-Sxx000 3.1 3.5 4.1 2 21 C460EZ600-Sxx000 3.1 3.5 4.1 2 21 Mechanical Specifications Description CxxxEZ600-Sxx000 Dimension Tolerance P-N Junction Area (µm) 350 x 350 ±40 Chip Area (µm) 380 x 380 ±40 Chip Thickness (µm) 100 ±25 Top Au Bond Pad Diameter (µm) 100 ±15 Au Bond Pad Thickness (µm) 3.0 ±1.0 380 x 380 ±40 3.0 ±1.0 Back Contact Metal Area (µm) Back Contact Metal Thickness (µm) Notes: 1. 2. 3. Maximum ratings are package-dependent. The above ratings were determined using a Au-plated TO39 header without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 150 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics measured in an integrating sphere using Illuminance E. This peak forward current specification is based on a 400-ms pulse width at a 1/5-duty cycle with a junction temperature of 65°C. Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc. CPR3DJ Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Standard Bins for CxxxEZ400-Sxx000 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ400-Sxx000) orders may be filled with any or all bins (CxxxEZ400-0xxx) contained in the kit. All radiant flux and all dominant wavelength values shown and specified are at If = 150 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. Radiant Flux C450EZ400-S06000 C450EZ400-0213 C450EZ400-0214 C450EZ400-0215 C450EZ400-0216 C450EZ400-0209 C450EZ400-0210 C450EZ400-0211 C450EZ400-0212 C450EZ400-0205 C450EZ400-0206 C450EZ400-0207 C450EZ400-0208 C450EZ400-0201 C450EZ400-0202 C450EZ400-0203 C450EZ400-0204 105 mW 90 mW 75 mW 60 mW 445 nm 447.5 nm 450 nm 452.5 nm 455 nm Dominant Wavelength Radiant Flux C460EZ400-S06000 C460EZ400-0213 C460EZ400-0214 C460EZ400-0215 C460EZ400-0216 C460EZ400-0209 C460EZ400-0210 C460EZ400-0211 C460EZ400-0212 C460EZ400-0205 C460EZ400-0206 C460EZ400-0207 C460EZ400-0208 C460EZ400-0201 C460EZ400-0202 C460EZ400-0203 C460EZ400-0204 105 mW 90 mW 75 mW 60 mW 455 nm 457.5 nm 460 nm 462.5 nm 465 nm Dominant Wavelength Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc. CPR3DJ Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Characteristic Curves These are representative measurements for the EZBright400. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Forward Current vs Forward Voltage Relative Light Intensity vs Junction Temperature 100% Relative Light Intensity (%) 200 175 150 If (mA) 125 100 75 50 25 95% 90% 85% 80% 75% 0 70% 0.0 0.5 1.0 1.5 2.0 2.5 Vf (V) 3.0 3.5 4.0 4.5 5.0 75 Wavelength Shift (nm) 100 80 60 40 20 125 150 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 0 25 50 75 100 125 150 175 25 200 50 If (mA) Dominant Wavelength Shift vs Forward Current 3.0 75 100 Junction Temperature (°C) 125 150 Voltage Shift vs Junction Temperature 0.0 2.5 -0.1 Shift (nm) Voltage Shift (V) 2.0 -0.2 1.5 1.0 -0.3 0.5 -0.4 0.0 -0.5 -0.5 0 25 50 75 100 If (mA) 125 150 175 200 25 50 75 CPR3DJ Rev. - 100 Junction Temperature (°C) Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc. 100 Junction Temperature (°C) 3.5 120 % Relative Intensity 50 Dominant Wavelength Shift vs Junction Temperature Relative Intensity vs Forward Current 140 25 125 150 Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2007 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright, EZ, and EZ400 are trademarks of Cree, Inc. CPR3DJ Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com