DAESAN MMBD101

Surface Mount Schottky
Barrier Diode
MMBD101
Features
Low Turn-on Voltage
ForUHFmixerapplication
Also suitablefor use in detector and ultra-fast
switching circuitsLow NoiseFigure- [email protected]
Very Low [email protected]
HighForwardConductance-0.5V(Typ) @ IF= 10mA
A
1
3
To p View
V
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagrams Below
Weight: 0.008 grams (approx.)
Mounting Position: Any
L
B S
2
G
C
H
D
3
1
3
CATHODE
2
J
K
1
ANODE
SOT-23
Dim
Min
Max
A
2.800 3.040
B
1.200 1.400
C
0.890 1.110
D
0.370 0.500
G
1.780 2.040
H
0.013 0.100
J
0.085 0.177
K
0.450 0.600
L
0.890 1.020
S
2.100 2.500
V
0.450 0.600
All Dimension in mm
MAXIMUM RATINGS
MMBD101
Rating
Reverse Voltage
Symbol
Value
Unit
VR
7.0
Volts
225
mW
1.8
mW/ C
Forward Power Dissipation
@ TA = 25oC
Derate above 25oC
PF
Junction Temperature
TJ
Storage Temperature Range
Tstg
o
+150
o
-55 to +150
C
C
o
DEVICE MARKING
MMBD101 = 4M
ELECTRICAL CHARACTERISTICS
(TA = 25oCunless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10 Ad c)
Diode Capacitance
(VR = 0, f = 1.0 MHz )
Symbol
Min
Typ
V(BR)R
7.0
10
Max
Unit
Volts
CT
0.88
1.0
pF
Forward Voltage
(IF = 10 mAdc)
VF
0.5
0.6
Volts
Reverse Leakage
(VR = 3.0 Vdc)
IR
0.02
0.25
Adc
RATINGS AND CHARACTERISTIC CURVES MMBD101
Figure 2. Forward Voltage
Figure 1. Reverse Leakage
100
0.5
V R = 3.0 Vdc
I F , Forwa rd C urren t (mA)
I R , R verse Lea kage ( A)
1.0
0.7
0.2
0.1
0.07
0.05
T A = 85 oC
10
o
T A = C0
1.0
T A = 25 oC
0.02
0.01
30
40
50
60
70
80
90
100
T A , Amb ien t Tem per ature ( OC)
110
120
0.1
130
0.3
0.4
0.7
Figure 4. Noise Figure
Figure 3. Capacitance
1.0
11
10
Local Oscillator Frequency = 1.0 GHz
9.0
N F, N oise Figure (dB)
0.9
C, C apacitance (pF)
0.5
0.6
V F, Forward Voltage (V )
0.8
0.7
8.0
7.0
6.0
5.0
4.0
3.0
2.0
0.6
0
1.0
2.0
V R , R everse Voltage (V )
3.0
4.0
1.0
0.1
0.2
0.5
1.0
2.0
PLO, Local Oscillator Power (mW)
5.0
10