DC COMPONENTS CO., LTD. BD237D DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for medium power linear and switching applications. TO-126ML Pinning .163(4.12) .153(3.87) 1 = Emitter 2 = Collector 3 = Base .044(1.12) .034(0.87) .060(1.52) .050(1.27) .148(3.75) .138(3.50) o Absolute Maximum Ratings(TA=25 Characteristic C) Rating Unit Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 80 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) IC 2 A Collector Current (peak) IC 6 A PD 25 o Junction Temperature TSTG 1 2 3 .591(15.0) .551(14.0) +150 -55 to +150 o .084(2.12) .074(1.87) .056(1.42) .046(1.17) .033(0.84) .027(0.68) .180 Typ (4.56) .084(2.14) .074(1.88) .027(0.69) .017(0.43) .090 Typ (2.28) W o TJ Storage Temperature .123(3.12) .113(2.87) .300(7.62) .290(7.37) Symbol Total Power Dissipation(TC=25 C) .146(3.70) .136(3.44) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 100 - - V Test Conditions Collector-Emitter Breakdown Voltage BVCEO 80 - - V IC=100mA Emitter-Base Breakdown Voltage BVEBO 5 - - V IE=100µA IC=1mA Collector Cutoff Current ICBO - - 0.1 mA VCB=100V Emitter Cutoff Current IEBO - - 1 mA VEB=5V VCE(sat) - - 0.6 V (1) Collector-Emitter Saturation Voltage (1) Base-Emitter On Voltage DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width IC=1A, IB=0.1A VBE(on) - - 1.3 V IC=1A, VCE=2V hFE1 40 - - - IC=150mA, VCE=2V hFE2 25 - - - IC=1A, VCE=2V fT 3 - - 380µs, Duty Cycle 2% MHz IC=250mA, VCE=10V, f=100MHz