Silicon Tuning Diode MMBV105GLT1 This device is designed in the surface Mount package for general frequency control and tuning applications.It provides solid-state reliability in replacement of mechanical tuning methods. • Controlled and Uniform Tuning Ration 3 1 2 1 ANODE 3 CATHODE CASE 318–08, STYLE 8 SOT– 23 (TO–236AB) MAXIMUM RATINGS(EACH DIODE) Rating Reverse Voltage Forward Current Device Dissipation @T A = 25°C Derate above 25°C Junction Temperature Storage Temperature Range Symbol VR IF PD Value 30 200 225 1.8 +125 –55 to +150 TJ T stg Unit Vdc mAdc mW mW/°C °C °C DEVICE MARKING MMBV105GLT1=M4E ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage ( I R=10µAdc) Reverse Voltage Leakage Current ( V R =28Vdc) Device Type MMBV105GLT1 Symbol Min Max Unit V (BR)R 30 — Vdc IR — 50 nAdc CT V R =25Vdc,f =1.0MHz Q V R =3.0Vdc pF f=50MHz CR C 3/ C 25 f=1.0MHz Min Max Typ Min Max 1.5 2.8 250 4.0 6.5 I1–1/2 MMBV105GLT1 TYPICAL CHARACTERISTICS 1000 18 Q , FIGURE OF MERIT 16 14 12 10 8.0 6.0 f = 1.0MHz 4.0 T A = 25°C V R =3Vdc TA = 25°C 100 2.0 10 0 0.3 0.5 1.0 2.0 3.0 5.0 10 10 20 30 100 V R , REVERSE VOLTAGE (VOLTS) f , FREQUENCY ( MHz ) Figure 1. Diode Capacitance Figure 2. Figure of Merit CT,DIODECAPACITANCE(NORMALIZED) C T , DIODE CAPACITANCE (pF) 20 1000 1.04 V R= 3.0Vdc 1.03 f = 1.0MHz 1.02 1.01 1.00 0.99 0.98 0.97 0.96 –75 –50 –25 0 +25 +50 +75 +100 +125 T A , AMBIENT TEMPERATURE (°C) Figure 3. Diode Capacitance I1–2/2