Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V • Low Reverse Leakage — 200 nA (max) • High Reverse Voltage — 70 Volts (min) • Available in 8 mm Tape and Reel • Device Marking: 5H 1 CATHODE MMDL770T1 1.0 pF SCHOTTKY BARRIER DIODE 1 2 ANODE 2 PLASTIC SOD– 323 CASE 477 MAXIMUM RATINGS Symbol VR Rating Reverse Voltage Value 70 Unit Vdc Max 200 Unit mW 1.57 635 mW/°C °C/W –55 to+150 °C THERMAL CHARACTERISTICS Symbol PD R θJA T J , T stg Characteristic Total Device Dissipation FR–5 Board,* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range *FR–5 Minimum Pad ORDERING INFORMATION Device MMDL770T1 Package SOD–323 Shipping 3000 / Tape & Reel ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 20 Volts, f = 1.0 MHz) Reverse Leakage (V R = 35 V) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mA) Symbol Min Typ Max Unit V (BR)R 70 — — Volts CT — 0.5 1.0 pF IR — 9.0 200 nAdc V — 0.7 1.0 Vdc F S4–1/3 MMDL770T1 TYPICAL CHARACTERISTICS τ, MINORITY CARRIER LIFETIME (ps) C T , TOTAL CAPACITANCE (pF) 2.0 MMBD770T1 f = 1.0 MHz 1.6 1.2 0.8 0.4 0 0 5.0 10 15 20 25 30 35 40 45 50 500 MMBD770T1 400 KRAKAUER METHOD 300 200 100 0 0 20 30 40 50 60 70 80 90 100 V R , REVERSE VOLTAGE (VOLTS) I F , FORWARD CURRENT (mA) Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 100 10 MMBD770T1 I F , FORWARD CURRENT (mA) MMBD770T1 I R , REVERSE LEAKAGE (µA) 10 T A = 100°C 1.0 T A = 75°C 0.1 0.01 T A = 25°C 10 T A = 85°C T A = –40°C 1.0 T A = 25°C 0.1 0.001 0 10 20 30 40 50 0.2 0.4 0.8 1.2 1.6 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Reverse Leakage Figure 4. Forward Voltage 2.0 S4–2/3 MMDL770T1 PACKAGE DIMENSIONS SOD–323 PLASTIC PACKAGE CASE 477–02 ISSUE A K A D 2 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. B MILLIMETERS INCHES DIM E C H J NOTE 3 A B C D E H J K MIN MAX 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 MIN MAX 0.063 0.071 0.045 0.053 0.031 0.039 0.010 0.016 0.006 REF 0.000 0.004 0.0035 0.0070 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE 0.63 mm 0.025’’ 1.60 mm 0.83 mm 0.033’’ 0.063’’ 2.85 mm 0.112’’ ( mm inches ) SOD–323 Soldering Footprint S4–3/3