Low Saturation Voltage MMBT1010LT1 MSD1010T1 PNP Silicon Driver Transistors Part of the GreenLineTM Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packages which are designed for low power surface mount applications. • Low V CE(sat) , < 0.1 V at 50 mA Applications • LCD Backlight Driver • Annunciator Driver • General Output Device Driver PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT 3 1 2 MAXIMUM RATINGS (T A = 25°C) CASE 318–08, STYLE 6 Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Symbol Value Unit V (BR)CBO V (BR)CEO V (BR)EBO 45 15 5.0 Vdc Vdc Vdc IC 100 mAdc Collector Current — Continuous SOT– 23 3 1 THERMAL CHARACTERISTICS 2 Characteristic Power Dissipation T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range Symbol Max Unit P D (1) 250 mW 1.8 mW/°C R θJA 556 °C/W TJ 150 °C °C T stg –55 —+150 CASE 318D –04, STYLE 1 SC– 59 COLLECTOR DEVICE MARKING MMBT1010LT1 = GLP; MSD1010T1 = GLP BASE EMITTER ELECTRICAL CHARACTERISTICS Characteristic Symbol Condition Min Max Unit Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage V (BR)CEO V (BR)EBO I CBO I CEO h FE1 (2) V CE(sat)(2) 15 5.0 — — 300 — — V BE(sat)(2) — — 0.1 100 600 0.1 0.1 0.19 1.1 Vdc Vdc µA µA — Vdc Base-Emitter Saturation Voltage I C = 10 mA, I B = 0 I E = 10 µA,I E = 0 V CB = 20 V, I E = 0 V CE = 10 V, I B = 0 V CE = 5 V,I C = 100 mA I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA I C = 100 mA, I B = 10 mA I C = 100 mA, I B = 10 mA — Vdc (1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (2) Pulse Test: Pulse Width <300 µs, D.C <2%. O3–1/1