ETL MSD602

NPN General Purpose Amplifier
Transistor Surface Mount
MSD602–RT1
COLLECTOR
3
3
1
2
2
BASE
1
EMITTER
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
Value
60
50
7.0
500
Unit
Vdc
Vdc
Vdc
mAdc
IC(P)
1.0
Adc
Symbol
PD
TJ
T stg
Max
200
150
–55 ~ +150
Unit
mW
°C
°C
CASE
318D–03, STYLE1
SC–59
MAXIMUM RATINGS (T A = 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current–Continuous
Collector Current–Peak
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Collector-Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = 10 µAdc, I E = 0)
Emitter-Base Breakdown Voltage (I E = 10 µAdc, I C = 0)
Collector-Base Cutoff Current (V CB = 20Vdc, I E = 0)
DC Current Gain (1)
(V CE = 10 Vdc, I C = 150 mAdc)
(V CE = 10 Vdc, I C = 500 mAdc)
Collector-Emitter Saturation Voltage (I C = 300 mAdc, I B = 30 mAdc)
Output Capacitance(VCB=10Vdc,IE=0,f=1.0MHz)
1. Pulse Test: Pulse Width < 300 µs, D.C < 2%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
I CBO
Min
50
60
7.0
—
Max
—
—
—
0.1
hFE1
hFE2
VCE(sat)
Cob
120
40
—
—
240
—
0.6
15
Unit
Vdc
Vdc
Vdc
µAdc
—
Vdc
pF
DEVICE MARKING
Marking Symbol
WRX
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N7–1/1