ETL MSD601

NPN General Purpose Amplifier
Transistors Surface Mount
MSD601–RT1
MSD601–ST1
COLLECTOR
3
3
1
2
BASE
1
EMITTER
2
CASE
MAXIMUM RATINGS (T A = 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current–Continuous
Collector Current–Peak
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
Value
60
50
7.0
100
Unit
Vdc
Vdc
Vdc
mAdc
I C(P)
200
mAdc
Symbol
PD
TJ
T stg
Max
200
150
–55 ~ +150
Unit
mW
°C
°C
318D–03, STYLE1
SC–59
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, I B = 0)
Collector-Base Breakdown Voltage (I C = 10 µAdc, I E = 0)
Emitter-Base Breakdown Voltage (I E = 10 µAdc, I C = 0)
Collector-Base Cutoff Current (V CB = 45 Vdc, I E = 0)
Collector-Emitter Cutoff Current (V CE = 10 Vdc, I B = 0)
DC Current Gain (1)
(V CE = 10 Vdc, I C = 2.0 mAdc)
MSD601-RT1
MSD601-ST1
(V CE = 2.0 Vdc, I C = 100 mAdc)
Collector-Emitter Saturation Voltage (I C = 100 mAdc, I B = 10 mAdc)
1. Pulse Test: Pulse Width < 300 µs, D.C. < 2%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
I CBO
I CEO
Min
50
60
7.0
—
—
Max
—
—
—
0.1
100
hFE1
210
290
90
—
340
460
—
0.5
hFE2
VCE(sat)
Unit
Vdc
Vdc
Vdc
µAdc
nAdc
—
Vdc
DEVICE MARKING
Marking Symbol
YRX
YSX
MSD601–RT1
MSD601–ST1
The “X” represents a smaller alpha digit Date Code. The Date Code indicates the actual month
in which the part was manufactured.
N6–1/1