F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier 02.09.02 Features F0100504B - 2.2kΩ high transimpedance - 29dB gain 3.3V/5V 2.5Gb/s NRZ Receiver - Low noise (typ.6pΑ/√Ηz@100MHz) Transimpedance Amplifier - Typical 1900MHz O/E Bandwidth - Over 25dB wide dynamic range - 3.3V or 5.0V single Voltage Supply operation - Differential output Applications - Preamplifier of an optical receiver circuit for OC-48/STM-16 (2.5Gb/s) Functional Description The F0100504B is stable GaAs integrated transimpedance amplifier. Typical Applications are for 2.5Gb/s optical receiver circuit, for example, OC-48/STM-16, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. The F0100504B typically specifies a high transimpedance of 2.2kΩ (RL=50Ω) at a typical 1900MHz O/E bandwidth (-3dB-cutoff frequency) with a dynamic range of over 26dB. It also provides a large optical input overload of more than +1dBm. Furthermore, it can operate with a low supply voltage of single +3.3V. It features a typical dissipation current of 50mA. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier cannot operate with the maximum performance owing to parasitic element of the package. F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier Absolute Maximum Ratings All published data at Ta=25°C unless otherwise indicated. This device isn’t guaranteed opto-electric characteristics in these ranges. At least, this device isn’t broken in these ranges. VSS=0V Parameter Symbol Value Units Attentions Supply Voltage VDD3.3 -0.3 to +5.0V V at 3.3V operation Supply Voltage VDD5.0 -0.3 to +7.0V V at 5.0V operation Input Current Iinpeak 4 mA - Ambient Operating Temperature Ta -40 to +90 °C - Storage Temperature Tstg -50 to 125 °C - Recommended Operating Conditions VSS=0V,unless specified Parameter Value Symbol Unit Supply Voltage VDD3.3 MIN. 3.10 Supply Voltage VDD5.0 4.75 5.00 5.25 V Operating Temperature Tc* 0 25 85 °C Input Capacitance Cpd - 0.3 - pF * Tc:Back side temperature of wafer Attentions TYP. 3.30 MAX. 3.60 V at 3.3V operation at 5.0V operation F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier Electrical Characteristics Tc*=0 to 85°C, VDD3.3=3.1 to 3.6V, VSS=0V,unless specified Parameters Symbol Test Conditions Value MIN. 35 0.7 1.6 TYP. 50 0.94 2.1 MAX 65 1.1 2.6 Units Supply Current Input Voltage Output Voltage (positive) IDD Vi Vop DC *1 *1 Output Voltage (negative) Von *1 1.6 2.1 2.6 V Gain (positive) S21p Single-ended, f=1MHz *1 27.0 29.0 33.0 dB Gain (negative) S21n Single-ended, f=1MHz *1 27.0 29.0 33.0 dB -3dB High Frequency Cut-off (positive) -3dB High Frequency Cut-off (positive) Input Impedance Fcp S21p-3dB 900 1200 1500 MHz Fcn S21p-3dB 850 1050 1400 MHz Ri f =1MHz, *1 85 100 120 Ω Output Impedance (positive) Rout f =1MHz, *1 35 55 75 Ω Output Impedance (negative) Rout f =1MHz, *1 35 55 75 Ω Transimpedance (positive) Ztp RL=50Ω,Single-ended, *2 1.70 2.20 2.70 kΩ 1.70 2.20 2.70 kΩ 5 10 30 Transimpedance (negative) Ztn RL=50Ω,Single-ended ,*2 AGC time constant Tagc Cout=470pF mA V V µsec * Tc:Back side temperature of wafer *1 Test circuit is shown [Test Circuits / 1] AC Characteristics]. *2 Zt(p,n)=10^(S21(p,n)/20)×(Ri+50)/2 Optical and Electrical Characteristics This table values are specified on condition of F0832483T. F0832483T is 2.5Gbps NRZ PIN-PD preamplifier module using F0100504B. Test circuits of F0832483T are shown in [Test Circuits]. λ=1.3µm, VDD=VPD=+3.1~+3.6V, VSS=GND, Tcm*3=-20~+85°C, unless specified Parameters Symbol Transimpedance Ztm O/E High Cut-off Frequency Value Test Conditions Unit MIN. TYP. MAX 1.6 2.0 - kΩ Fcoeh RL=50Ω,Single-ended, f =100MHz, *4 Ztm-3dB, *4 1450 1900 - MHz O/E Low Cut-off Frequency Fcoel Cout=470pF 5 17 40 kHz Equivalent Input Noise Inoise f =100MHz - 6.0 8.5 pA/√Hz Sensitivity Pin-min - -24 -21 dBm Overload Pin-max 2.48832Gbps, PRBS2^23-1, BER=1E-10, *5 Output Impedance Routm No input, f=1MHz, *4 *3 Tcm : case temperature *4 Show [Test Circuits / 3] Optical & Electrical Characteristics]. *5 Show [Test Circuits / 4] Sensitivity Characteristics]. +2 - - dBm 40 60 80 Ω F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier Block Diagram VDD3.3 VDD5.0 OUT IN OUTB AGC Rf CAP COUT VSS Symbol Description VDD3.3 Supply Voltage for 3.3V operation, It is not requierd for 5.0V operation. VDD5.0 VSS Supply Voltage for 5.0V operation, For 3.3V operation, VDD3.0 must be opened. Suplly Voltage Generaly Vss is connected to GND. IN Input OUT Non-inverted data output, must be AC coupled. OUTB Inverted data output, must be AC coupled. CAP Connected to outer capasitance F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier Die Pad Assignment A 12 11 10 9 8 13 7 14 6 820um 5 1 3 2 4 O 820um No. Symbol Center Coordinates (um) No. Symbol Center Coordinates (um) 1 VDD3.3 (75,140) 10 Vss (395,715) 2 VDD5.0 (395,75) 11 VDD3.3 (235,715) 3 OUTB (555,75) 12 CAP (75,715) 4 Vss (715,75) 13 Vss (75,555) 5 OUTB (715,235) 14 IN (75,395) 6 Vss (715,395) 7 OUT (715,555) 8 Vss (715,715) O (0,0) 9 OUT (555,715) A (790,790) F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier Test Circuits 1) AC Characteristics Network Analyzer 50Ω 50Ω Pin=-50dBm f=300kHz to 3GHz VDD IN OUT F0100504B Switch OUTB 0.22uF VSS 50Ω Prober 2) Block Diagram of F0832483T VDD VPD C2 R Diode C3 PD R=3kΩ C1=200pF C2=100pF C3=2200pF Cout=470pF CPD = 0.3pF(typical value) VDD3.3 OUT IN C1 F0100504B CAP OUTB COUT VSS F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier 3) Optical & Electrical Characteristics 3.3V VPD 0.022uF Optical Attenuator F0832483T VDD 3.3V 0.022uF Optical Component 50Ω Analyzer * * Agilent 8702 Systems 4) Sensitivity Characteristics 3.3V VPD E/O Optical Converter Attenuator Pulse F0832483T 0.022uF VDD 3.3V 0.022uF CLK 0.22uF Pattern Generator Comparator SEI F0321818M 50Ω OUT OUTB Bit Error Rate Tester F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier Examples of AC Characteristics (1) Gain (S21p) Ta=25°C, VDD=3.30V, VSS=0V, Pin=-50dBm, RL=50 , 300kHz to 3GHz 35 30 Gain (dB) 25 20 15 10 5 0 0.1 1 10 100 1000 10000 frequency (MHz) (2) Gain (S21n) Ta=25°C, VDD=3.30V, VSS=0V, Pin=-50dBm, RL=50 , 300kHz to 3GHz 35 30 Gain (dB) 25 20 15 10 5 0 0.1 1 10 100 frequency (MHz) 1000 10000 F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier Examples of Optical & Electrical Characteristics (1) Frequency response of Transimpedance (Ta=25°C) Transimpedance (pA/√Hz) 80 70 60 50 40 30 3.1V 3.3V 3.6V 20 10 0 1 10 100 1000 10000 Frequency (MHz) (2) Frequency response of Equivalent input noise (Ta=25°C, VDD=3.3V) 18 16 Inoise (pA/√Hz) 14 12 10 8 6 4 2 0 10 100 1000 Frequency (MHz) 10000 F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier (3) Typical Bit Error Rate Data rate: 2.48832Gb/s, PRBS2^23-1, Ta=25°C, VDD=3.3V, VSS=0V, RL=50Ω 10-3 10-4 10-5 Bit Error Rate 10-6 10-7 10-8 10-9 10-10 10-11 10-12 -29 -27 -25 -23 Optical Input Power (dBm) -21 F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier (3) Eye Diagram (Ta=25°C, VDD=3.3V, 50Ωroad single-end) (3)-1. Average input Optical Power –20dBm (λ =1310nm, 2.48832Gb/s, NRZ, PRBS2^23-1) 10 mV/div 100ps/div (3)-2. Average input Optical Power +2dBm (λ =1310nm, 2.48832Gb/s, NRZ, PRBS2^23-1) 100mV/div 100ps/div F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier General Description A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, “typical”, “minimum”, or “maximum” parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully. Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current floes into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration. Recommendation SEI basically recommends The F08 series PD preamplifier modules for customers of the transimpedance amplifiers. In these modules, a transimpedace amplifier, a PD, and a noise filter circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically a fiber pigtail. The F08series lineups are the best choice for customers to using the F01series transimpedance amplifiers. SEI’s F08 series allows the customers to resolve troublesome design issues and to shorten the development lead time. Noise Performance F0100504B based on GaAs MES FET’s shows excellent low-noise characteristics compared with IC’s based on the silicon bipolar process. Many transmission systems often demand superior signal-to –noise ratio, that is, high sensitivity; F0100504B is the best Choice for such applications. The differential circuit configuration in the output enable a complete differential operation to reduce common mode noise: simple single ended output operation is also available. Die-Chip Description F0100504B is shipped like the die-chip described above. The die thickness is typically 280um ± 20um with the available pad size uncovered by a passivation film of 95um square.The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au. F0100504B 3.3V/5V 2.5Gbps Transimpedance Amplifier Assembling Condition SEI recommends the assembling process as shown below and affirms sufficient wire-pull and die share strength. The heating time of one minute at the temperature of 310°C gave satisfactory results for die-bonding with AuSn preforms. The heating and ultrasonic wire-bonding at the temperature of 150°C by a ball-bonding machine effective. Quality Assurance For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owning to die-shipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without any problems according to SEI’s authorized rules. A microscope inspection is conducted in conformance with the MIL-STD-883C Method 2010.7. Precautions Owing to their small dimensions, the GaAsFET’s from which the F0100504B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment.