02.03.04 ♦ Features F0100604B 10 Gb/s Receiver • Low voltage of +5.0 /-3.5V power supply • 400 Ω high transimpedance • Typical 9.0 GHz broad bandwidth • 17.0 dB high gain • Over 18 dB wide dynamic range • Excellent equivalent input noise current of 10 pA/Hz1/2 Transimpedance Amplifier ♦ Applications • Preamplifier of an optical receiver circuit for STM-64/OC-192 (10 Gb/s) ♦ Functional Description The F0100604B is a stable GaAs integrated transimpedance amplifier capable of 17.0 dB gain at a typical 9.0 GHz 3 dB-cutoff-frequency, making it ideally suited for a 10 Gb/s optical receiver circuit, for example, OC-192/STM-64, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier can not operate with the maximum performance owing to parasitic capacitance of the package. F0100604B 10 Gb/s Transimpedance Amplifier ♦ Absolute Maximum Ratings Ta=25 °C, unless specified Parameter Symbol Value Units Supply Voltage VDD -0.5 to 7.0 V Supply Voltage VSS -4.0 to +0.5 V Supply Current IDD 160 mA Supply Current ISS -60 mA Ambient Operating Temperature Ta -40 to +90 °C Storage Temperature Tstg -50 to +125 °C ♦ Recommended Operating Conditions Ta=25 °C, VDD=+5.0 V, VSS=-3.5 V, unless specified Value Parameter Symbol Units Min. Max. Supply Voltage VDD 4.75 5.25 V Supply Voltage VSS -3.68 -3.32 V Ambient Operating Temperature Ta 0 70 °C ♦ Electrical Characteristics Ta=25 °C, VDD=+5.0 V, VSS=-3.5 V, unless specified Value Parameter Symbol IDD Supply Current Test Conditions DC ISS Units Min. Typ. Max. - 100 - - 30 - mA Gain S21 PIN=-20dBm f=1GHz, RL=50Ω - 17.0 - dB -3dB High Frequency Cut-off FC PIN=-20dBm RL=50Ω - 9.0 - GHz Input Impedance RI f=1GHz - 55 Trans-Impedance ZT *1 f=1GHz - 400 - Ω Output Voltage VO DC - 1.6 - V Input Voltage VI DC - 0.2 - V *1 ZT= RI +50 ×10 2 S21 20 Ω F0100604B 10 Gb/s Transimpedance Amplifier ♦ Block Diagram VDD Level Shift IN GND VSS ♦ Die Pad Description VDD Supply Voltage VSS Supply Voltage GND Ground IN Input OUT Output Buffer OUT F0100604B 10 Gb/s Transimpedance Amplifier ♦ Die Pad Assignments A (10) (9) (8) (7) (11) (6) (12) (5) (4) (13) (1) (2) (3) O No. Symbol Center Coordinates(µm) No. Symbol Center Coordinates(µm) (1) GND (375,100) (10) VDD (200,1280) (2) VSS (600,100) (11) GND (100,960) (3) GND (970,100) (12) IN (100,690) (4) GND (1280,470) (13) GND (100,320) (5) OUT (1280,690) (6) GND (1280,960) (7) GND (1265,1280) (8) VDD (1000,1280) O (0,0) (9) VDD (500,1280) A (1380,1380) F0100604B 10 Gb/s Transimpedance Amplifier ♦ Test Circuits 1) AC Characteristics Network Analyzer 50 ‰ VDD Pin=-20 dBm f=130 MHz ~20GHz 50 ‰ VSS IN OUT DUT Prober 2) Sensitivity Characteristics VPD 5V 0.022µF E/O Converter Pulse Pattern Generator Optical Attenuater VDD PD DUT CLK 0.022µF Post Amp. Bit Error Rate Tester 5V 0.022µF VSS -3.5V 0.022µF 10 Gb/s Transimpedance Amplifier ♦ Examples of AC Characteristics (1) Gain (S21) (2) Input Noise Current Density & Transimpedance G NG N I I T T N N I I R R P P W W O O N N F0100604B F0100604B 10 Gb/s Transimpedance Amplifier ♦ Typical Bit Error Rate 10 -3 VDD=VPD=4.75V VDD=VPD=5.00V VDD=VPD=5.25V Bit Error Rate (1/s) 10 -4 10Gbps, PRBS223-1 10-5 10-6 10 -7 10-8 10 -9 10-10 10 -11 10-12 -24 -23 -22 -21 -20 -19 -18 -17 -16 Optical Input Power (dBm) CP D=0.25pF 10 Gb/s Transimpedance Amplifier F0100604B ♦ General Description A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo-current from a PIN photo diode (PD). The performance in tems of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, “typical”, “minimum”, or “maximum” parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully . Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current flows into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration. ♦ Die-Chip Description The F0100604B is shipped like the die-chip described above. The die thickness is typically 600 µm ± 20 µm with the available pad size uncovered by a passivation film of 95 µm square. The material of pads is TiW/Pt/Au and the backside is metalized by Ti/Au. ♦ Assembling Condition SEI recommends the assembling process as shown below and affirms sufficient wirepull and die-shear strength. The heating time of one minute at the temperature of 310 °C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wire-bonding at the temperature of 150 °C by a ball-bonding machine is effective. 10 Gb/s Transimpedance Amplifier F0100604B ♦ Quality Assurance For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owing to dieshipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without in any problems according to SEI’s authorized rule. A microscope inspection is conducted in conformance with the MIL-STD883C Method 2010.7. ♦ Precautions Owing to their small dimensions, the GaAs FET’s from which the F0100604B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment. Electron Device Department