FORMOSA FM723-NS

Formosa MS
Chip Schottky Barrier Diodes
FM723-NS
Surface mount small signal type
SOD-323S
Features
Extremely thin package
0.106(2.70)
0.091(2.30)
0.008(0.20)Typ.
Low stored charge
0.014(0.35)
0.010(0.25)
Majority carrier conduction
0.057(1.45)
0.041(1.05)
0.083(2.10)
0.067(1.70)
0.005(0.12)
0.003(0.08)
Mechanical data
0.031(0.80)
0.024(0.60)
Case : Molded plastic, SOD-323-S
Terminals : Solder plated, solderable per MIL_STD_750,
Method 2026
Dimensions in inches and (millimeters)
Polarity : Indicated by cathode band
Marking Code : 4
Mounting Position : Any
Weight : 0.0001482 ounce, 0.0042 gram
o
MAXIMUM RATINGS (AT T A =25 C unless otherwise noted)
PARAMETER
CONDITIONS
Repetitive peak reverse voltage
Mean rectifying current
Forward surge current
8.3ms single half sine-wave superimposed
on rate load (JEDEC methode)
Capacitance between terminals
f=1MHz and applied 10VDC reverse voltage
Storage temperature
Operating temperature
Symbol
MIN.
TYP.
MAX.
UNIT
V RM
30
V
IO
200
mA
I FSM
1500
mA
CT
20
pF
TJ
-40
+125
o
T STG
-40
+125
o
C
C
o
ELECTRICAL CHARACTERISTICS (AT T A =25 C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward voltage
I F = 200 mA DC
VF
0.60
V
Reverse current
V R = 30 V
IR
15
uA
RATING AND CHARACTERISTIC CURVES (FM723-NS)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
10m
1000
O
REVERSE CURRENT : (A)
100
1
0
0.1
C
C
O
25
75
O
C
O
1m
O
75 C
100
10
O
25 C
1
25
5C
10
O
12
FORWARD CURRENT : (mA)
125 C
0.2
0.3
0.4
0.5
0.1
0
0.6
10
20
30
40
REVERSE VOLTAGE : (V)
FORWARD VOLTAGE : (V)
Fig. 4 Derating curve
FIG.3-TYPICAL TERMINALS CAPACITANCE
100
100
Io CURRENT (%)
CAPACITANCE BETWEEN TERMINALS : (pF)
(mounting on glass epoxy PCBs)
10
1
0
5
10
15
20
25
30
35
80
60
40
20
REVERSE VOLTAGE : V
0
0
25
50
75
100
125
AMBIENT TEMPERATURE : Ta
150