7MBP75TEA120 1200V / 75A 7 in one-package Econo IPM series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in built-in control circuit Maximum ratings and characteristics Absolute maximum ratings(at Tc=25°C unless otherwise specified) Item Bus voltage DC Surge Short operating Collector-Emitter voltage *1 Collector current Brake Inverter DC 1ms DC Collector power dissipation One transistor *3 Collector current DC 1ms Forward current diode Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5) Symbol Rating Min. Max. VDC 0 0 400 0 -0.5 -0.5 -0.5 -20 -40 - VDC(surge) V SC VCES IC ICP -IC PC IC ICP IF PC V CC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso 900 1000 800 1200 75 150 75 368 25 50 25 212 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W A A A W V V mA V mA °C °C °C °C V N·m Note *1 : Vces shall be applied to the input voltage between terminal P and U or ‚V or W or DB, N and U or V or W or DB *2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.61/(75 x 2.0) x 100>100% *3 : Pc=125°C/IGBT Rth(j-c)=125/0.34=368W [Inverter] Pc=125°C/IGBT Rth(j-c)=125/0.59=212W [Brake] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 10±1sec. 7MBP75TEA120 IGBT-IPM Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Inverter Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Brake Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time Symbol ICES VCE(sat) VF ICES VCE(sat) VF ton toff trr Condition Min. VCE=1200V Vin terminal open. Ic=75A Terminal Chip -Ic=75A Terminal Chip Typ. Max. 2.2 1.6 1.9 2.3 - 1.0 3.1 2.0 1.0 2.6 3.7 3.6 0.3 1.2 - VCE=1200V Vin terminal open. Terminal Ic=25A Chip Terminal -Ic=25A Chip VDC=600V,Tj=125°C IC=75A Fig.1, Fig.6 VDC=600V, IF=75A Fig.1, Fig.6 Unit mA V V mA V V µs Control circuit Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Item Symbol Iccp ICCN Vin(th) Input zener voltage Alarm signal hold time VZ tALM Current limit resistor RALM Condition Switching Frequency : 0 to 15kHz Tc=-20 to 125°C Fig.7 ON OFF Rin=20k ohm Tc=-20°C Fig.2 Tc=25°C Fig.2 Tc=125°C Fig.2 Alarm terminal Min. Typ. Max. 15 45 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575 Unit mA mA V V V ms ms ms ohm Protection Section ( Vcc=15V) Item Over Current Protection Level of Inverter circuit Over Current Protection Level of Brake circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC IOC tDOC tSC TjOH Condition Tj=125°C Tj=125°C Tj=125°C Tj=125°C Fig.4 Surface of IGBT chips Min. Typ. Max. 113 38 150 5 - 8 - 20 0.5 12.5 - - TjH V UV VH 11.0 0.2 Thermal characteristics( Tc=25°C) Item Junction to Case thermal resistance *9 Inverter Brake IGBT FWD IGBT Case to fin thermal resistance with compound Symbol Rth(j-c) Rth(j-c) Rth(j-c) Rth(c-f) Min. - Typ. 0.05 Max. 0.34 0.61 0.59 - Unit °C/W °C/W °C/W °C/W Min. Typ. Max. Unit *9 For 1device, Case is under the device Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5) Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1µs, polarity ±,10minuets Judge : no over-current, no miss operating Rise time 1.2µs, Fall time 50µs Interval 20s, 10 times Judge : no over-current, no miss operating ±2.0 - - kV ±5.0 - - kV Symbol V DC V CC - Min. 13.5 2.5 Typ. 15.0 - Max. 800 16.5 3.0 Unit V V Nm Symbol Wt Min. - Typ. 270 Max. - Unit g Recommendable value Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Weight Item Weight Unit A A µs µs °C °C V V 7MBP75TEA120 IGBT-IPM Vin(th) Vin On Vin(th) trr 90% 50% Ic 90% 10% toff ton Figure 1. Switching Time Waveform Definitions ) on on Gate On Vge (Inside IPM ) Fault (Inside IPM off off /Vin Gate Off normal alarm /ALM tALM > Max. 1 tALM > t ALM 2ms(typ.) 3 Max. 2 Fault : Over-current,Over-heat or Under-voltage Figure 2. Input/Output Timing Diagram tsc Ic Ic Ic I ALM I ALM I ALM Figure.4 Definition of tsc Vcc PP IPM IPM 20 k DC 15V VccU 20k DC 15V VinU P IPM DC 300V 600V GND N Ic U Figure 6. Switching Characteristics Test Circuit SW1 GNDU V 20k DC 15V + + Vin HCPL 4504 CT L SW2 Earth Vcc VinX GND AC200V AC400V + W Icc A 4700p N Cooling Fin Vcc P Noise DC 15V IPM U Vin V P.G +8V fsw W GND N Figure 5. Noise Test Circuit Figure 7. Icc Test Circuit 7MBP75TEA120 IGBT-IPM Block diagram P VccU 4 VinU 3 Pre- Driver ALMU 2 RALM 1.5k Vz GNDU 1 VccV 8 VinV 7 U Pre- Driver ALMV 6 RALM 1.5k Vz GNDV 5 VccW 12 VinW 11 ALMW 10 V Pre- Driver RALM 1.5k Vz GNDW 9 Vcc 14 VinX 16 W Pre- Driver Vz GND VinY 13 17 Pre- Driver Vz VinZ Pre-drivers include following functions 1.Amplifier for driver 18 Pre- Driver Vz 2.Short circuit protection 3.Under voltage lockout circuit B VinDB 15 ALM 19 4.Over current protection 5.IGBT chip over heating protection Pre- Driver RALM 1.5k Vz N Outline drawings, mm MBCFM Package Type : P622 Mass : 270g 7MBP75TEA120 IGBT-IPM Characteristics Control circuit characteristics (Representative) Power supply current vs. Switching frequency Tc=125°C (typ.) Input signal threshold voltage vs. Power supply voltage (typ.) 2.5 P-side N-side 40 Vcc=17V Vcc=15V 30 Vcc=13V 20 Vcc=17V Vcc=15V Vcc=13V 10 Input signal threshold voltage : Vin(on),Vin(off) (V) Power supply current : Icc (mA) 50 0 0 5 10 15 20 Switching frequency : fsw (kHz) 12 10 8 6 4 2 1 0.5 13 14 15 16 17 Power supply voltage : Vcc (V) 18 40 60 80 100 120 0.8 0.6 0.4 0.2 0 20 140 Junction temperature : Tj (°C) 40 60 80 100 120 Junction temperature : Tj (°C) 140 Over heating characteristics TjOH,TjH vs. Vcc (typ.) Alarm hold time vs. Power supply voltage (typ.) 200 Over heating protection : TjOH (°C) OH hysterisis : TjH (°C) 3 2.5 Tc=100°C 2 Tc=25°C 1.5 1 0.5 0 12 } Vin(on) 1.5 1 Under voltage hysterisis : VH (V) Under voltage : VUVT (V) } Vin(off) Under voltage hysterisis vs. Jnction temperature (typ.) 14 0 20 2 0 12 25 Under voltage vs. Junction temperature (typ.) Alarm hold time : tALM (mSec) Tj=25°C Tj=125°C 13 14 15 16 17 Power supply voltage : Vcc (V) 18 TjOH 150 100 50 TjH 0 12 13 14 15 16 17 Power supply voltage : Vcc (V) 18 7MBP75TEA120 IGBT-IPM Main circuit characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C(Chip) Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C(Terminal) 150 Vcc=15V 125 Collector Current : Ic (A) Collector Current : Ic (A) 150 Vcc=17V 100 Vcc=13V 75 50 25 100 Vcc=17V Vcc=13V 75 50 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) 4 Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C(Chip) 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) 4 Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C(Terminal) 150 125 Collector Current : Ic (A) 150 Collector Current : Ic (A) Vcc=15V 25 0 Vcc=15V 100 Vcc=17V 75 Vcc=13V 50 25 125 Vcc=15V 100 Vcc=17V Vcc=13V 75 50 25 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Collector-Emitter voltage : Vce (V) 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) Forward current vs. Forward voltage (typ.) (Chip) Forward current vs. Forward voltage (typ.) (Terminal) 150 150 125 125 Forward Current : If (A) Forward Current : If (A) 125 25°C 100 125°C 75 50 25 4 25°C 100 125°C 75 50 25 0 0 0 0.5 1 1.5 Forward voltage : Vf (V) 2 2.5 0 0.5 1 1.5 Forward voltage : Vf (V) 2 2.5 7MBP75TEA120 IGBT-IPM 35 30 25 Eon 20 15 Eoff 10 5 Err Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=125°C Switching loss : Eon,Eoff,Err (mJ/cycle) Switching loss : Eon,Eoff,Err (mJ/cycle) Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=25° C 35 Eon 30 25 20 15 Eoff 10 5 Err 0 0 0 25 50 75 100 0 125 25 50 75 100 125 Collector current : Ic (A) Collector current : Ic (A) R e ve rs ed bias ed sa fe ope ra ting a re a Vcc =15 V,Tj<=1 25° C(m in .) Transient therm al resistance (max.) Thermal res istance : Rth(j-c) (°C/W ) 700 600 C ollecto r curre nt : Ic (A) 500 400 S CSO A (non-repetitive pulse) 300 200 100 R BSO A (R epe titive puls e) 1 FW D IGBT 0.1 0.01 0 0 20 0 400 60 0 800 1 00 0 1200 0.001 140 0 0.01 C olle ctor -Emitte r voltage : V ce ( V) 1 Pulse w idth :Pw (sec ) Power derating for IGBT (max.) (per device) Power derating for FWD (max.) (per device) 500 250 Collecter Power Dissipation : Pc (W) Collecter Power Dissipation : Pc (W) 0.1 400 300 200 100 0 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (°C) 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (°C) 7MBP75TEA120 IGBT-IPM S w itchin g time vs. Collector current (typ.) Edc=600V,Vcc=15V, Tj=125° C Switching time vs. Collector current (typ.) E dc=6 00V ,V cc=15V ,Tj=25 ° C 10000 Switching time : ton,toff,tf (nSec ) Switching time : ton,toff,tf (nSec ) 10000 toff 1000 ton 100 tf ton 1000 100 tf 10 10 0 20 40 60 80 100 Collector current : Ic (A) 120 140 trr125°C trr25°C Irr125°C 100 Irr25°C 10 1 0 20 40 60 80 100 Forward current:IF(A) 0 20 40 60 80 100 Collector current : Ic (A) Reverse recovery characteristics (typ.) trr,Irr vs.IF Reverse recovery current:Irr(A) Reverse recovery time:trr(nsec) toff 120 140 120 140 7MBP75TEA120 IGBT-IPM Characteristics Dynamic Brake Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj=25°C Collector current vs. Collector-Emitter voltage (typ.) Tj=125°C 80 Vcc=15V Collector Current : Ic (A) Collector Current : Ic (A) 80 60 Vcc=17V Vcc=13V 40 20 0 Vcc=15V 60 Vcc=17V 40 Vcc=13V 20 0 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) 3.5 0 0.5 1 1.5 2 2.5 3 Collector-Emitter voltage : Vce (V) R e ve rs ed bias ed sa fe ope ra ting a re a Vcc=1 5V, Tj<= 125 °C (min .) Transient therm al resistance (m ax.) 35 0 1 IG BT 30 0 25 0 C ollecto r curre nt : Ic (A) Thermal resistance : Rth(j-c) (°C/W ) 3.5 0.1 20 0 SC SO A (non-repe titive puls e) 15 0 10 0 50 R BSO A (R epetitive puls e) 0 0.01 0 0.0 01 0.01 0.1 20 0 400 60 0 800 1 00 0 1 C ollector -Emitte r v oltage : V c e ( V) Pulse w idth :Pw (sec) Power derating for IGBT (max.) (per device) Collecter Power Dissipation : Pc (W) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (°C) 1200 140 0