Pb Free Plating Product ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B GJ3055S BVDSS RDS(ON) ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 25m 18A Description The GJ3055S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Low Gate Charge *Simple Drive Requirement *Fast Switching Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VGS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current, VGS@10V ID @TC=25 18 A Continuous Drain Current, VGS@10V ID @TC=100 10 A 30 A 28 W Pulsed Drain Current 1 IDM Total Power Dissipation PD @TC=25 Linear Derating Factor 0.22 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value W/ Thermal Data Parameter Unit Thermal Resistance Junction-case Max. Rthj-c 4.5 /W Thermal Resistance Junction-ambient Max. Rthj-a 110 /W GJ3055S Page: 1/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 20 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.037 - Gate Threshold Voltage VGS(th) 0.5 - 1.2 V VDS=VGS, ID=250uA gfs - 7 - S VDS=10V, ID=6A IGSS - - ±100 nA VGS= ±8V - - 1 uA VDS=20V, VGS=0 - - 25 uA VDS=16V, VGS=0 - - 25 - - 30 - - 40 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=150 ) Static Drain-Source On-Resistance IDSS RDS(ON) V/ Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=10V, ID=8A m VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A Total Gate Charge2 Qg - 18.9 - Gate-Source Charge Qgs - 2.1 - Gate-Drain (“Miller”) Change Qgd - 2.4 - Td(on) - 14.3 - Tr - 11.9 - Td(off) - 22.1 - Tf - 16.7 - Input Capacitance Ciss - 614 - Output Capacitance Coss - 151 - Reverse Transfer Capacitance Crss - 116 - Symbol Min. Typ. Max. Unit VSD - - 1.3 V IS=18A, VGS=0V, Tj=25 IS - - 18 A VD= VG=0V, VS=1.3V ISM - - 30 A Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time nC ID=6A VDS=10V VGS=10V ns VDS=10V ID=1A VGS=4.5V RG=6 RL=10 pF VGS=0V VDS=8V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Continuous Source Current(Body Diode) Pulsed Source Current(Body Diode) 1 Test Conditions Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. GJ3055S Page: 2/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. Transconductance v.s. Drain Current Fig 5. Breakdown Voltage v.s. Junction Temperature GJ3055S Fig 2. Transfer Characteristics Fig 4. On-Resistance v.s. Junction Temperature Fig 6. Body Diode Forward Voltage v.s. Source Current Page: 3/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics Fig 11. Switching Time Circuit GJ3055S Fig 8. Gate Threshold Voltage v.s. Junction Temperature Fig 10. Typical Capacitance Characteristics Fig 12. Switching Time Waveform Page: 4/5 ISSUED DATE :2006/05/19 REVISED DATE :2006/11/09B Fig 13. Normalized Thermal Transient Impedance Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GJ3055S Page: 5/5