Pb Free Plating Product ISSUED DATE :2005/09/12 REVISED DATE :2006/06/01B GSC9435M BVDSS RDS(ON) ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 55m -5.3A Description The GSC9435M provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features *Simple Drive Requirement *Lower On-resistance *Fast Switching Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Symbol Ratings Unit VDS -30 V VGS ±20 V -5.3 A -24 A 2.5 W ID @TA=25 2 IDM 1 Total Power Dissipation PD @TA=25 Linear Derating Factor 0.02 Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 Symbol Value Rthj-amb 50 W/ Thermal Data Parameter Thermal Resistance Junction-ambient GSC9435M 1 Max. Unit /W Page: 1/5 ISSUED DATE :2005/09/12 REVISED DATE :2006/06/01B Electrical Characteristics (Tj = 25 Parameter unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS -30 - - V VGS=0, ID=-250uA Gate Threshold Voltage VGS(th) -1.0 - -2.5 V VDS=VGS, ID=-250uA gfs - 5 - S VDS=-5V, ID=-5.3A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current IDSS - - -1 uA VDS=-24V, VGS=0 - - 55 - - 90 Forward Transconductance2 Static Drain-Source On-Resistance2 RDS(ON) m Total Gate Charge2 Qg - 11.7 - Gate-Source Charge Qgs - 2.1 - Gate-Drain (“Miller”) Change Qgd - 2.9 - Td(on) - 9 - Tr - 10 - Td(off) - 37 - Tf - 23 - Ciss - 582 - Output Capacitance Coss - 125 - Reverse Transfer Capacitance Crss - 86 - Symbol Min. Typ. Max. Unit VSD - -0.84 -1.2 V 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Test Conditions VGS=-10V, ID=-5.3A VGS=-4.5V, ID=-4.2A nC ID=-5.3A VDS=-15V VGS=-10V ns VDS=-15V ID=-1A VGS=-10V RG=6 RD=15 pF VGS=0V VDS=-15V f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Notes: 1. Surface Mounted on FR4 Board, t Test Conditions IS=-1.7A, VGS=0V 10sec. 2. Pulse width 300us, duty cycle 2%. GSC9435M Page: 2/5 ISSUED DATE :2005/09/12 REVISED DATE :2006/06/01B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Transfer Characteristics Fig 3. Transconductance v.s. Drain Current Fig 4. On-Resistance v.s. Junction Temperature Fig 5. Breakdown Voltage v.s. Junction Temperature Fig 6. Body Diode Forward Voltage v.s. Source Current GSC9435M Page: 3/5 ISSUED DATE :2005/09/12 REVISED DATE :2006/06/01B Fig 7. Maximum Safe Operating Area Fig 9. Gate Charge Characteristics Fig 11. Switching Time Circuit GSC9435M Fig 8. Gate Threshold Voltage v.s. Junction Temperature Fig 10. Typical Capacitance Characteristics Fig 12. Switching Time Waveform Page: 4/5 ISSUED DATE :2005/09/12 REVISED DATE :2006/06/01B Fig 13. Normalized Thermal Transient Impedance Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GSC9435M Page: 5/5