GTM GM1898

ISSUED DATE :2004/12/03
REVISED DATE :
GM1898
NP N E PITAX I AL PLANAR T RANSI STOR
Description
The GM1898 is designed for switching applications.
Package Dimensions
SOT-89
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5
TYP.
0.70 REF.
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Symbol
Ratings
Tj
+150
Unit
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCEO
80
V
Emitter to Base Voltage
VEBO
5.0
V
IC
1
A
Collector Current
ICP (Single pulse Pw=20ms)
2
A
PD
500
mW
Total Power Dissipation
Characteristics
Symbol
at Ta = 25
Min.
Typ.
Max.
Unit
BVCBO
100
-
-
V
IC=50uA
BVCEO
80
-
-
V
IC=1mA
BVEBO
5
-
-
V
IE=50uA
ICBO
-
-
1
uA
VCB=80V
IEBO
-
-
1
uA
VEB=4V
VCE(sat)
-
-
400
mV
IC=500mA, IB=20mA
hFE
82
fT
Cob
-
-
390
100
-
MHZ
25
-
pF
Test Conditions
VCE=3V, IC=500mA
VCE=10V,IC=50mA,f=100MHZ
VCB=10V,IE=0, f=1MHz
Classification Of hFE
Rank
P
Q
R
hFE
82-180
120-270
180-390
GM1898
1/2
ISSUED DATE :2004/12/03
REVISED DATE :
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GM1898
2/2