GTM GMBT8050

ISSUED DATE :2002/11/21
REVISED DATE :2005/04/08B
GM BT8050
NP N E PITAXI AL T RANSI STOR
Description
The GMBT8050 is designed for general purpose amplifier applications.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
0.85
1.15
0
10
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Electrical Characteristics(Ta = 25
Symbol
Ratings
+150
-55~+150
25
20
5
700
225
Unit
V
V
V
mA
mW
,unless otherwise noted)
Min.
Typ.
Max.
Unit
BVCBO
25
-
-
V
Test Conditions
BVCEO
20
-
-
V
IC=1mA ,IB=0
BVEBO
5
-
-
V
IE=10uA ,IC=0
ICBO
-
-
1
uA
VCB=30V, IE=0
IEBO
-
-
100
nA
VEB=5V ,IC=0
IC=10uA , IE=0
VCE(sat)
-
-
500
mV
IC=500mA, IB=50mA
VBE(on)
-
-
1
V
VCE=1V, IC=150mA
hFE
120
-
500
fT
150
-
-
MHz
-
-
10
pF
Cob
VCE=1V, IC=150mA
VCE=10V, IC=20mA, f=100MHz
VCB=10V, f=1MHz
Classification Of hFE
Rank
D9C
D9D
D9E
hFE
120 ~ 200
150 ~ 300
250 ~ 500
1/2
ISSUED DATE :2002/11/21
REVISED DATE :2005/04/08B
Characteristics Curve
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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