GM3055 1/6 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The SOT-89 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5 TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Symbol Operating Junction Temperature Range Ratings Unit Tj -55 ~+150 Storage Temperature Range Tstg -55 ~ +150 Drain - Source Voltage VDS 30 V Gate - Source Voltage VGS ±20 V Continuous Drain Current ,VGS@10V ID@TC=25 15 A Continuous Drain Current ,VGS@10V ID@TC=100 9 A 1 Pulsed Drain Current IDM PD@TC=25 Total Power Dissipation 50 A 15 W Thermal Data Symbol parameter Value Unit Rthj-case Thermal Resistance junction-case Max. 3 /W Rthj-amb Thermal Resistance junction-ambient Max. 42 /W Source –Drain Diode Symbol Is ISM VsD Parameter Test Conditions Continuous source Current (Body Diode) Pulsed Source Current(Body Diode) 2 Forward On Voltage VD=VG=0V, VS=1.3V 1 Tj=25 ,Is=15A,V GS=0V Min. Typ. Max. Units - - 15 A - - 50 A - - 1.3 V 2/6 Notes: 1. Pulse width limited by safe operating area. 2. Pulse width 300us, duty cycle 2%. Electrical Characteristics @Tj = 25 Parameter Symbol BVDss Test Conditions Drain – Source Breakdown Voltage VGS=0V, ID=250uA BVDSS/ Tj Breakdown Voltage Temperature Coefficient RDS(ON) VGS(th) IDSS IGSS (unless otherwise specified) Static Drain-Source On-Resistance Gate Threshold Voltage Reference to 25 , ID=1mA Min. Typ. Max. Unit 30 - - V - 0.037 - V/ VGS=10V,ID=8A - - 80 m VGS=4.5V,ID=6A - - 100 m VDS=VGS, ID=250uA 1 - 3 V VDS=30V,V GS=0V - - 25 uA Drain-Source Leakage Current(Tj=150 ) VDS=24V,V GS=0V - - 250 uA Gate-Source Leakage VGS=±20V - - ±100 nA Drain-Source Leakage Current(Tj=25 2 ) Qg Total Gate Charge ID=8A - 5.4 - nC Qgs Gate-Source Charge VDS=24V - 1.3 - nC Qgd Gate-Drain (“Miller)Charge VGS=5V - 3.6 - nC VDS=15V - 3.6 - nS td(on) 2 Turn-on Delay Time tr Rise Time ID=8A - 19.8 - nS td(off) Turn-off Delay Time RG=3.4 ,V GS=10V - 13 - nS tf Fall Time RD=1.9 - 3.2 - nS Ciss Input Capacitance VGS=0V - 260 - pf Coss Output Capacitance VDS=25V - 144 - pf Crss Reverse Transfer Capacitance f=1.0MHZ - 13 - pf 3/6 Characteristics Curve 4/6 5/6 6/6 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165