GTM GTS9926E

ISSUED DATE :2005/01/07
REVISED DATE :2006/12/25B
GTS9926E
BVDSS
RDS(ON)
ID
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
20V
28m
4.6A
Description
The GTS9926E provides the designer with the best combination of fast switching, ruggedized device design,
ultra low on-resistance and cost-effectiveness.
Features
*Low on-resistance
*Capable of 2.5V gate drive
*Low drive current
*Surface mount package
Package Dimensions
REF.
A
A1
b
c
D
Millimeter
Min.
Max.
-
1.20
0.05
0.15
0.19
0.30
0.09
0.20
2.90
3.10
REF.
Millimeter
Min.
Max.
E
E1
e
6.20
6.60
4.30
4.50
L
S
0.45
0.75
0°
8°
0.65 BSC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
Unit
VDS
20
V
VGS
±12
V
3
ID @TA=25
4.6
A
3
ID @TA=70
3.7
A
20
A
1
W
Continuous Drain Current , VGS@10V
Continuous Drain Current , VGS@10V
Pulsed Drain Current
Symbol
1,2
IDM
Total Power Dissipation
PD @Ta=25
Linear Derating Factor
0.008
Operating Junction and Storage Temperature Range
Tj, Tstg
-55 ~ +150
Symbol
Value
Rthj-a
125
W/
Thermal Data
Parameter
Thermal Resistance Junction-ambient
GTC9926E
Max.
Unit
/W
Page: 1/4
ISSUED DATE :2005/01/07
REVISED DATE :2006/12/25B
Electrical Characteristics (Tj = 25
Parameter
unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.1
-
Gate Threshold Voltage
VGS(th)
0.5
-
-
V
VDS=VGS, ID=250uA
gfs
-
9.7
-
S
VDS=10V, ID=4.6A
IGSS
-
-
±10
uA
VGS= ±10V
-
-
1
uA
VDS=20V, VGS=0
-
-
25
uA
VDS=20V, VGS=0
-
-
28
-
-
40
Qg
-
12.5
-
Gate-Source Charge
Qgs
-
1
-
Gate-Drain (“Miller”) Change
Qgd
-
6.5
-
Td(on)
-
820
-
Tr
-
934
-
Td(off)
-
860
-
Tf
-
510
-
Input Capacitance
Ciss
-
231
-
Output Capacitance
Coss
-
164
-
Reverse Transfer Capacitance
Crss
-
137
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
IS=1.25, VGS=0V, Tj=25
IS
-
-
1.25
A
VD= VG=0V, VS=1.2V
ISM
-
-
20
A
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance
IDSS
RDS(ON)
2
Total Gate Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
VGS=4.5V, ID=4A
VGS=2.5V, ID=2A
nC
ID=4.6A
VDS=20V
VGS=5V
ns
VDS=10V
ID=1A
VGS=4.5V
RG=6
RD=10
pF
VGS=0V
VDS=10V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Continuous Source Current(Body Diode)
Continuous Source Current(Body Diode)
1
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on FR4 board, t
GTC9926E
10sec.
Page: 2/4
ISSUED DATE :2005/01/07
REVISED DATE :2006/12/25B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Maximum Drain Current
v.s. Case Temperature
Fig 6. Type Power Dissipation
GTC9926E
Page: 3/4
ISSUED DATE :2005/01/07
REVISED DATE :2006/12/25B
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
Fig 10. Gate Threshold Voltage v.s. Junction
Temperature
Fig 11. Forward Characteristics of
Reverse Diode
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GTC9926E
Page: 4/4