PHOTODIODE Si PIN photodiode S9723, S9724 Large area Si PIN photodiode for direct detection S9723 and S9724 are large-area Si detectors specifically designed for the direct detection of high-energy charged particles and X-rays. These Si detectors are mounted on PC boards with holes for the purpose of ∆E-E detection of charged particles. These detector’s thicknesses are 100 ± 5 µm (S9723) and 10 ± 2.5 µm (S9724). Thickness uniformities of the active area are as good as 2.0 µm Typ. (S9723) and 1.0 µm Typ. (S9724). This ensures excellent sensitivity uniformity over the entire active area. Features Applications l Large area l Low dark current l Thickness uniformity *1 : 2 µm (S9723) l Heavy ions energy detection l X-ray detection l ∆E-E detection 1 µm (S9724) l Active area : 26 × 26 × 0.1 t mm (S9723) 10 × 10 × 0.01 t mm (S9724) ■ Specifications/Absolute maximum ratings Parameter Symbol Active area Detector thickness Thickness uniformity *1 Surface orientation Front side Dead layer thickness *2 Rear side Reverse voltage VR Max. Current Operating temperature *3 Topr Storage temperature *3 Tstg *1: Variation in the detector thickness *2: Reference value *3: No condensation S9723 26 × 26 100 ± 5 2.0 S9724 10 × 10 10 ± 2.5 1.0 Unit mm µm µm - (111) 1 1 µm 20 2 V mA °C °C 2 0 to +60 0 to +80 ■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Parameter Full depletion voltage Dark current Rise time Terminal capacitance Symbol VD ID tr Ct Condition VR=VD VR=VD, RL=50 Ω VR=VD, f=1 MHz Min. - S9723 Typ. 5 2 80 0.75 Max. 10 50 - Min. - S9724 Typ. 0.5 0.01 100 1 Max. 1 0.1 - Unit V nA ns nF PRELIMINARY DATA Sep. 2004 1 Si PIN photodiode ■ Dark current vs. reverse voltage ■ Terminal capacitance vs. reverse voltage (Typ. Ta=25 ˚C) 10 nA S9723, S9724 (Typ. Ta=25 ˚C) 100 nF S9723 TERMINAL CAPACITANCE DARK CURRENT 1 nA 100 pA S9724 10 pA 1 pA 100 fA 0.01 0.1 1 10 10 nF S9723 1 nF S9724 100 pF 0.1 100 1 REVERSE VOLTAGE (V) 10 100 REVERSE VOLTAGE (V) KPINB0304EA KPINB0305EA ■ Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.2) WIRE 24.0 1.6 3.5 3.0 5.08 0.3 WIRE WIRE PROTECTION RESIN 3.0 Si CHIP Si CHIP 3.0 10 ± 2.5 µm 27.0 100 ± 5 µm 40.0 46.0 WIRE PROTECTION RESIN 3.0 11.0 0.4 30.0 10.0 × 10.0 ACTIVE AREA (2 ×) 0.45 Fe·Ni·Co ALLOY 3.0 5.08 1.6 3.5 3.0 3.0 40.0 24.0 46.0 3.0 30.0 26.0 × 26.0 ACTIVE AREA S9724 (2 ×) 0.45 Fe·Ni·Co ALLOY S9723 PWB (4 ×) 2.5 HOLE PWB (4 ×) 2.5 HOLE KSPDA0167EA KSPDA0168EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KPIN1073E01 Sep. 2004 DN