PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm (width) × 2.0 mm (height) and is arrayed at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch) long PC board. By linearly arranging two or more pieces of S5668 series, a long and narrow photodiode array can be easily configured at the same element pitch. For X-ray detection applications, S5668-11 with a CsI (Tl) scintillator and S5668-34 with a ceramic scintillator are also available. Features Applications l Active area: 1.175 × 2.0 mm per element l Element pitch: 1.575 mm l Mounted on a 1-inch (25.4 mm) long PC board l Long and narrow format by multiple arrays l High-speed response (S5668-02) l Low capacitance (S5668-05) l X-ray baggage inspection l Multichannel spectrophotometry l Optical position detection ■ Absolute maximum ratings Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 10 -20 to +60 -20 to +80 Unit V °C °C ■ Electrical and optical characteristics (Ta=25 °C, per 1 element) Parameter Symbol λ Spectral response range Peak sensitivity wavelength λp Photo sensitivity S Dark current ID Rise time tr Terminal capacitance Ct Noise equivalent power NEP Condition S5668-01 Typ. Max. 320 to 1100 960 0.31 λ=540 nm 0.56 λ=λp VR=10 mV 1 VR=0 V 0.7 RL=1 kΩ 10 to 90 % VR=0 V 300 f=10 kHz VR=0 V -15 4.1 × 10 λ=540 nm S5668-02 Typ. Max. 320 to 1100 - S5668-05 Typ. Max. 320 to 1060 - Unit nm - 960 - 920 - 10 0.31 0.58 5 30 0.31 0.56 10 50 - 0.1 - 0.1 - µs 550 30 40 20 30 pF - 9.3 × 10 -15 - 1.3 × 10 -14 - nm A/W pA 1/2 W/Hz 1 16-element Si photodiode array S5668 series ■ Dimensional outline (unit: mm) 0.6 ± 0.15 (25.0) P 2.54 × 8 = 20.32 PIN No. (8.0) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 20.0 ± 0.2 2.0 (4.2) 15.24 ± 0.1 (6.0) C-2.0 MARK 1.3 1.0 ± 0.15 (18 ×) 0.45 Fe Ni Co PIN 25.4 +0 -0.3 GLASS EPOXY BOARD G-10 (BLACK) EPOXY RESIN (6.0) 1.175 PIN No. 3.5 ± 0.5 1.575 P 1.575 × 15 = 23.625 CATHODE COMMON ANODE 2 ANODE 4 ANODE 6 ANODE 8 ANODE 10 ANODE 12 ANODE 14 ANODE 16 CATHODE COMMON ANODE 15 ANODE 13 ANODE 11 ANODE 9 ANODE 7 ANODE 5 ANODE 3 ANODE 1 KMPDA0042EB Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 2 Cat. No. KMPD1012E06 Aug. 2006 DN