ISTS150, ISTS832S, ISTS832SD ISTS250, ISTS822S, ISTS822SD TRANSMISSIVE OPTO-ELECTRONIC DUAL CHANNEL SLOTTED INTERRUPTER SWITCHES WITH TRANSISTOR SENSORS 24.2 17.8 E 11.4 E 11.5 5.4 2.54 11.4 2.8 7.9 7.4 10.4 10.0 ISTS250 ISTS822S ISTS822SD 2.54 2.8 10.4 10.0 7 6 4 5 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 2.54 7.62 2 3 APPLICATIONS l Copiers, Printers, Facsimilies, Record Players, Cassette Decks, VCR's OPTICAL CENTRE LINE 0.45 0.40 8 FEATURES l Single or Double apertures for High Resolution l 2.5mm Gap between LED and Detector l Dual channels "side by side" 24/9/97 2.8 7.9 7.4 1 DESCRIPTION This series of photointerrupters are dual channel switches consisting of two Gallium Arsenide infrared emitting diodes and two NPN silicon photo transistors mounted in a "side by side" configuration on opposite sides of a 2.5mm wide slot. Dual channels enable direction of travel sensing. The transmissive housing reduces possible interference from ambient light and provides dust and dirt protection. In addition the ISTS822S, ISTS832S have 0.25mm apertures in front of the phototransistors, While the ISTS822SD, ISTS832SD have the same sized apertures in front of both emitters and phototransistors 11.5 2.54 OPTICAL CENTRE LINE 0.45 0.40 7.62 Dimensions in mm 1 3.2 DIA 2 PLCS 2.8 ISTS150 ISTS832S ISTS832SD ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C to + 85°C Operating Temperature -25°C to + 85°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 5V 75mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current IC Power Dissipation 30V 5V 20mA 75mW ISOCOM INC 720 E., Park Boulevard, Suite 104, Plano, TX 75074 USA Tel: (972) 423-5521 Fax: (972) 422-4549 DB92003-AAS/A1 ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) Input Output PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 3 1.2 10 V V µA IF = 20mA IR = 10µA VR = 3V Collector-emitter Breakdown (BVCEO) ( Note 1 ) 30 V IC = 1mA Emitter-collector Breakdown (BVECO) 5 V IE = 100µA nA VCE = 10V 250 µA 20mA IF , 10V V CE ISTS822S, ISTS832S 250 (0.25mm apertures phototransistors only) µA 20mA IF , 10V VCE ISTS822SD, ISTS832SD ( 0.25mm apertures in front of both - emitters and phototransistors ) µA 20mA IF , 10V V CE Collector-emitter Dark Current (ICEO) Coupled 1.6 TEST CONDITION On-State Collector Current IC ( ON ) ( Note 1 ) ISTS150, ISTS250 ( no apertures ) 100 100 Collector-emitter Saturation VoltageVCE(SAT) ISTS150, ISTS250 0.4 V 20mA IF , 125µA IC ISTS822S, ISTS832S 0.4 V 20mA IF , 125µA IC ISTS822SD, ISTS832SD 0.4 V 20mA IF , 50µA IC µs µs VCC = 5V, IF = 20mA, RL= 100Ω Rise Time Fall Time Note 1 24/9/97 tr tf 6 6 Special Selections are available on request. Please consult the factory. DB92003-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Normalized Output Current vs. Collector-emitter Voltage 10 Normalized output current Collector power dissipation PC (mW) 100 75 50 25 0 -25 0 25 50 75 100 IF = 50mA 4 2 1 30mA 20mA 0.4 10mA 0.2 5mA Normalized to IF = 20mA VCE = 10V Pulsed PW = 100µs PRR = 100pps 0.1 0.04 0.02 0.01 TA = 25°C 0.1 125 10 100 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( °C ) Forward Current vs. Ambient Temperature Normalized Output Current vs. Forward Current 2.0 60 Normalized to IF = 20mA VCE = 0.4V Pulsed PW = 100µs PRR = 100pps 1.8 Normalized output current 50 Forward current IF (mA) 1 40 30 20 10 1.6 1.4 1.2 T A = 25°C 1.0 0.8 0.6 0.4 0.2 0 0 0 25 75 100 125 5 10 20 Normalized Output Current vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature 1.0 0.5 0 0 25 50 75 Ambient temperature TA ( °C ) 24/9/97 2 Forward current IF (mA) IF = 20mA VCE = 10V -25 1 Ambient temperature TA ( °C ) 1.5 Normalized output current 50 100 Collector-emitter saturation voltage VCE(SAT) (V) -25 50 0.28 0.24 IF = 20mA IC = 50µA 0.20 0.16 0.12 0.08 0.04 0 -25 0 25 50 75 100 Ambient temperature TA ( °C ) DB92003AAS/A1