ETC SBR40100PT

SBR40100PT
Using state-of-the-art SBR IC process technology,
the following features are made possible in a single device:
Major ratings and characteristics
Values
Characteristics
IF(AV) Rectangular Waveform
VRRM
VF@20A, Tj=125OC
Tj (operating/storage)
Device optimized for low forward voltage drop to
maximize efficiency in Power Supply applications
Units
40
A
100
V
0.68
-65 to 175
V, typ
O
C
MECHANICAL:
* Molded Plastic TO-247 package
ELECTRICAL:
* Low Forward Voltage Drop
* Reliable High Temperature Operation
* Super Barrier Design
* Softest, fast switching capability
* 175OC Operating Junction Temperature
2
1
Anode
Common
Cathode
3
Anode
Maximum Ratings and Electrical Characteristics
O
(at 25 C unless otherwise specified)
SYMBOL
UNITS
VRM
VRWM
VRRM
100
Volts
IO
40
Amps
Peak Forward Surge Current - 1/2 60hz
IFSM
280
Amps
Peak Repetitive Reverse Surge Current
(2uS-1Khz)
IRRM
2
Amps
Instantaneous Forward Voltage (per leg)
IF = 20A; TJ = 25OC
IF = 20A; TJ= 125OC
VF
Typ
-----
Max
0.82
0.73
Maximum Instantaneous Reverse Current at
Rated VRM
TJ = 25OC
TJ = 125OC
IR *
Typ
-----
Max
100
10
DC Blocking Voltage
Working Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Rated VR-20Khz Square Wave) - 50% duty
cycle
Maximum Rate of Voltage Change
(at Rated VR)
dv/dt
10,000
Maximum Thermal Resistance JC (per leg)
Package = TO-247
RθJC
2
TJ
-65 to +175
Operating and Storage Junction Temperature
Volts
uA
mA
V/uS
O
C/W
O
C
* Pulse width < 300 uS, Duty cycle < 2%
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SBR40100PT
10
100
1
If, Instantaneous Forward Current (Amps)
Ir, Reverse Current (mA)
Tj=175C
Tj=125C
0.1
Tj=75C
0.01
Tj=25C
0.001
0.0001
0
20
40
60
80
100
120
10
Tj=175C
Tj=125C
1
Tj=75C
Tj=25C
0.1
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
Vf, Instantaneous Forward Voltage (Volts)
Vr, Reverse Voltage (Volts)
Figure 1: Typical Reverse Current
Figure 2: Typical Forward Voltage
If, Average Forward Current (Amps)
20
10
0
0
25
50
75
100
125
150
175
Tc, Case Temp (C)
Figure 3: Current Derating, Case
APD SEMICONDUCTOR reserves the right to make changes without further notice to any products herein. APD SEMICONDUCTOR makes no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does APD SEMICONDUCTOR assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APD SEMICONDUCTOR data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APD SEMICONDUCTOR does not convey any license
under its patent rights nor the rights of others. APD SEMICONDUCTOR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the APD SEMICONDUCTOR product could create a situation where personal injury or death may occur. Should Buyer
purchase or use APD SEMICONDUCTOR products for any such unintended or unauthorized application, Buyer shall indemnify and hold APD SEMICONDUCTOR and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized use, even if such claim alleges that APD SEMICONDUCTOR was negligent regarding the design or manufacture of the part..
1 Lagoon Drive, Suite 410, Redwood City, CA 94065, USA
Ph: 650 508 8896 FAX: 650 508 8865
Homepage: www.apdsemi.com
email: [email protected]
________________________________________________________________________________________________
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Version 2.0 - April 2006
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