TIP29, 30 High Power Bipolar Transistor Features: • Collector-Emitter sustaining voltageVCEO(sus) = 60V (Minimum) - TIP29A, TIP30A = 100V (Minimum) - TIP29C, TIP30C. • Collector-Emitter saturation voltageVCE(sat) = 0.7V (Maximum) at IC = 1.0A. • Current gain-bandwidth product fT = 3.0MHz (Minimum) at IC = 200mA. Pin 1. Base 2. Collector 3. Emitter Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 NPN TIP29A TIP29C PNP TIP30A TIP30C 1.0 Ampere Complementary Silicon Power Transistors 40 - 100 Volts 30 Watts TO-220 Dimensions : Millimetres 4. Collector(Case). Page 1 31/05/05 V1.0 TIP29, 30 High Power Bipolar Transistor Maximum Ratings Characteristic Symbol TIP29A TIP30A TIP29C TIP30C 60 100 Unit Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO 5.0 Collector Current-Continuous -Peak IC 1.0 3.0 Base Current IB 0.4 Total Power Dissipation at TC = 25°C Derate above 25°C PD 30 0.24 W W/°C TJ, TSTG -65 to +150 °C Operating and Storage Junction Temperature Range V A THERMAL CHARACTERISTICS Characteristic Symbol Maximum Unit Thermal Resistance Junction to Case Rθjc 4.167 °C/W Figure - 1 Power Derating Page 2 31/05/05 V1.0 TIP29, 30 High Power Bipolar Transistor Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit VCEO(sus) 60 100 - V ICEO - 0.3 ICES - 0.2 IEBO - 1.0 hFE 40 15 75 VCE(sat) - 0.7 OFF Characteristics Collector-Emitter Sustaining Voltage (1) TIP29A, TIP30A (IC = 30mA, IB = 0) TIP29C, TIP30C Collector Cut off Current (VCE = 30V, IB = 0) TIP29A, TIP30A TIP29C, TIP30C (VCE = 60V, IB = 0) Collector Cut off Current (VCE = 60V, VEB = 0) TIP29A, TIP30A (VCE = 100V, VEB = 0) TIP29C, TIP30C Emitter Cut off Current (VEB = 5.0V, IC = 0) mA ON CHARACTERISTICS (1) DC Current Gain (IC = 0.2A, VCE = 4.0V) (IC = 1.0A, VCE = 4.0V) Collector-Emitter Saturation Voltage (IC = 1.0A, IB = 125mA) - V Base-Emitter On Voltage (IC = 1.0A, VCE = 4.0V) VBE(on) - 1.3 Current Gain-Bandwidth Product (2) (IC = 200mA, VCE = 10V, f = 1MHz) fT 3.0 - Small Signal Current Gain (IC = 200mA, VCE = 10V, f = 1kHz) hfe 20 - DYNAMIC CHARACTERISTICS MHz - (1) Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2.0%. (2) fT = hFE • fTEST. Page 3 31/05/05 V1.0 TIP29, 30 High Power Bipolar Transistor Figure - 3 Switching Time Equivalent Circuit Figure - 2 Turn-On Time Figure - 4 DC Current Gain Figure - 5 Turn-Off Time Figure - 6 Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure - 6 curve is based on TJ(PK) = 150°C; TC is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(PK) ≤150°C. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Page 4 31/05/05 V1.0 TIP29, 30 High Power Bipolar Transistor Specifications TYPE Part Number TIP29A NPN TIP29C TIP30A PNP TIP30C Page 5 31/05/05 V1.0 TIP29, 30 High Power Bipolar Transistor Notes: International Sales Offices: AUSTRALIA – Farnell InOne FINLAND – Farnell InOne NETHERLANDS – Farnell InOne SWITZERLAND – Farnell InOne Tel No: Tel No: Tel No: ++ 61 2 9645 8888 Fax No: ++ 61 2 9644 7898 Fax No: ++ 358 9 345 5411 Fax No: ++ 31 30 241 7333 Tel No: ++ 41 1 204 64 64 Fax No: ++ 41 1 204 64 54 AUSTRIA – Farnell InOne FRANCE – Farnell InOne NEW ZEALAND – Farnell InOne UK – Farnell InOne Tel No: Tel No: Tel No: Tel No: ++ 43 662 2180 680 ++ 358 9 560 7780 ++ 33 474 68 99 99 ++ 31 30 241 7373 ++ 64 9 357 0646 ++ 44 8701 200 200 Fax No: ++ 43 662 2180 670 Fax No: ++ 33 474 68 99 90 Fax No: ++ 64 9 357 0656 Fax No: ++ 44 8701 200 201 BELGIUM – Farnell InOne GERMANY – Farnell InOne NORWAY – Farnell InOne UK – BuckHickman InOne Tel No: Tel No: Tel No: ++ 45 44 53 66 66 ++ 44 8450 510 150 ++ 32 3 475 2810 ++ 49 89 61 39 39 39 Fax No: ++ 32 3 227 3648 Fax No: ++ 49 89 613 59 01 Fax No: ++ 45 44 53 66 02 ++ 44 8450 510 130 BRAZIL – Farnell-Newark InOne HONG KONG – Farnell-Newark InOne Tel No: ++ 852 2268 9888 PORTUGAL – Farnell InOne UK – CPC ++ 55 11 4066 9400 Tel No: ++ 34 93 475 8804 ++ 44 8701 202 530 Fax No: ++ 55 11 4066 9410 Fax No: ++ 852 2268 9899 Fax No: ++ 34 93 474 5288 ++ 44 8701 202 531 CHINA – Farnell-Newark InOne IRELAND – Farnell InOne SINGAPORE – Tel No: Tel No: Tel No: ++86 10 6238 5152 Fax No: ++86 10 6238 5022 Farnell-Newark InOne Tel No: ++ 65 6788 0200 ++ 353 1 830 9277 Fax No: ++ 353 1 830 9016 Fax No: ++ 65 6788 0300 export EXPORT – Farnell InOne Tel No: ++ 44 8701 200 208 Fax No: ++ 44 8701 200 209 For enquiries from all other markets DENMARK – Farnell InOne ITALY – Farnell InOne SPAIN – Farnell InOne Tel No: Tel No: Tel No: ++ 45 44 53 66 44 ++ 39 02 93 995 200 ++ 34 93 475 8805 Fax No: ++ 45 44 53 66 06 Fax No: ++ 39 02 93 995 300 Fax No: ++ 34 93 474 5107 ESTONIA – Farnell InOne MALAYSIA – SWEDEN – Farnell InOne http://www.farnellinone.com Tel No: ++ 358 9 560 7780 Fax No: ++ 358 9 345 5411 Farnell-Newark InOne Tel No: ++ 60 3 7873 8000 Fax No: ++ 60 3 7873 7000 Tel No: ++ 46 8 730 50 00 Fax No: ++ 46 8 83 52 62 http://www.buckhickmaninone.com http://www.cpc.co.uk Disclaimer This data sheet and its contents (the "Information") belong to the Premier Farnell Group (the "Group") or are licensed to it. 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