HiPerFETTM
Power MOSFETs
IXFK 180N10
IXFX 180N10
VDSS
ID25
RDS(on)
Single MOSFET Die
= 100 V
= 180 A
=
8 mW
trr £ 250 ns
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
100
100
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
ID(RMS)
IDM
IAR
TC = 25°C (MOSFET chip capability)
External lead (current limit)
TC = 25°C, Note 1
TC = 25°C
180
76
720
180
A
A
A
A
EAR
EAS
TC = 25°C
TC = 25°C
60
3
mJ
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
560
W
TJ
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
300
°C
PD
TC = 25°C
TL
1.6 mm (0.063 in.) from case for 10 s
Md
Mounting torque
Weight
TO-264
0.9/6
PLUS 247
TO-264
Nm/lb.in.
6
10
g
g
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 3mA
100
V
VGS(th)
VDS = VGS, ID = 8mA
2.0
4.0 V
IGSS
VGS = ±20 V, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
G
D (TAB)
D
TO-264 AA (IXFK)
G
D
G = Gate
S = Source
(TAB)
S
D = Drain
TAB = Drain
Features
• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
±100 nA
TJ = 25°C
TJ = 125°C
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
PLUS 247TM
(IXFX)
100 mA
2 mA
8 mW
Advantages
• PLUS 247TM package for clip or spring
mounting
• Space savings
• High power density
98552B (7/99)
1-4
IXFK 180N10
IXFX 180N10
Symbol
Test Conditions
gfs
VDS = 10 V; ID = 60A
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Note 2
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
td(off)
RG = 1 W (External),
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
60
90
S
9100
pF
3200
pF
1660
pF
50
ns
90
ns
140
ns
65
ns
360
nC
65
nC
190
nC
RthJC
0.22
0.15
RthCK
Source-Drain Diode
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
180
A
ISM
Repetitive;
pulse width limited by TJM
720
A
VSD
IF = 100A, VGS = 0 V, Note 1
1.5
V
250
ns
t rr
QRM
IF = 50A,-di/dt = 100 A/ms, VR = 50 V
IRM
Note: 1. Pulse width limited by TJM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.1
mC
13
A
PLUS247TM (IXFX) Outline
Dim.
Millimeter
Min. Max.
A
4.83
5.21
A1
2.29
2.54
A2
1.91
2.16
b
1.14
1.40
1.91
2.13
b1
b2
2.92
3.12
C
0.61
0.80
D 20.80 21.34
E
15.75 16.13
e
5.45 BSC
L
19.81 20.32
L1
3.81
4.32
Q
5.59
6.20
R
4.32
4.83
TO-264 AA (IXFK) Outline
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
© 2000 IXYS All rights reserved
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
Millimeter
Min.
Max.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.46
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
BSC
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
2-4
IXFK 180N10
IXFX 180N10
Figure 2. Output Characteristics at 125OC
Figure 1. Output Characteristics at 25OC
200
200
VGS=10V
9V
8V
TJ=25OC
ID - Amperes
6V
100
5V
100
5V
0
0
0.0
0.5
1.0
1.5
2.0
0
1
2
Figure 3. RDS(on) normalized to 15A/25OC vs. ID
4
5
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ
1.8
2.0
VGS = 10V
O
TJ = 125 C
1.6
RDS(ON) - Normalized
RDS(ON) - Normalized
3
VDS - Volts
VDS - Volts
1.4
1.2
TJ = 25OC
1.0
0
50
100
150
1.8
1.6
VGS=10V
VGS=15V
1.0
50
75
100
125
150
Figure 6. Admittance Curves
100
100
80
ID - Amperes
75
Lead Current Limit
50
25
-50
ID=90A
TJ - Degrees C
Figure 5. Drain Current vs. Case Temperature
0
VGS=10V
VGS=15V
1.2
0.8
25
200
ID=180A
1.4
ID - Amperes
ID - Amperes
6V
50
50
0.8
7V
150
150
ID - Amperes
TJ=125OC VGS=10V
9V
8V
7V
60
40
TJ = 125oC
TJ = 25oC
20
-25
0
25
50
75
100 125 150
TC - Degrees C
0
2
4
6
8
VGS - Volts
IXF 180N10 P1
© 2000 IXYS All rights reserved
3-4
IXFK 180N10
IXFX 180N10
Figure 7. Gate Charge
Figure 8. Capacitance Curves
15
F = 100kHz
Capacitance - pF
VGS - Volts
12
Ciss
10000
VDS=50V
ID=90A
IG=10mA
9
6
Coss
3
Crss
0
1000
0
50
100 150 200 250 300 350 400
0
5
10
15
Gate Charge - nC
20
25
30
35
40
VDS - Volts
Figure 10. Forward Bias Safe Operating Area
Figure 9. Forward Voltage Drop of the Intrinsic Diode
200
200
100
175
VGS= 0V
1 ms
ID - Amperes
ID - Amperes
150
125
100
TJ=125OC
75
10 ms
10
DC
TC = 25OC
TJ=25OC
50
25
1
0
0.4
0.6
0.8
1.0
1.2
1.4
1
1.6
10
100
VDS - Volts
VSD - Volts
Figure 11. Transient Thermal Resistance
0.40
R(th)JC - K/W
0.20
R i:
0.02
0.046
0.154
0.10
0.08
0.06
ti:
0.04
0.02
0.01
10-3
0.007
0.01
0.25
3
R(th)JC =
10-2
10-1
100
SRi{1-exp(-t/ti)}
i=1
101
Pulse Width - Seconds
© 2000 IXYS All rights reserved
4-4