MII 400-12E4 MID 400-12E4 MDI 400-12E4 IGBT Module phaseleg and chopper topolgies IC25 = 420 A = 1200 V VCES VCE(sat) typ. = 2.2 V Preliminary 3 T1 3 D1 D1 8 1 9 D2 11 2 10 1 T2 T2 8 D11 9 1 D12 11 D2 2 10 MII 3 T1 2 MID MDI Features IGBTs T1-T2 • IGBT Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES 1200 V ± 20 V IC25 IC80 TC = 25°C TC = 80°C 420 300 A A ICM VCEK VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 µH 450 VCES A tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 4.7 Ω; TVJ = 125°C non repetitive 10 µs Ptot TC = 25°C 1700 W Symbol Conditions VCE(sat) IC = 300 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 10 mA; VGE = VCE ICES VCE = VCES; VGE = 0 V; IGES VCE = 0 V; VGE = ± 20 V td(on) tr td(off) tf Eon Eoff Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.6 4.5 TVJ = 25°C TVJ = 125°C 0.8 3.5 - low saturation voltage - positive temperature coefficient - fast switching - short tail current for optimized performance in resonant circuits • HiPerFREDTM diodes - fast and soft reverse recovery - low operating forward voltage - low leakage current • Package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - kelvin emitter terminal for easy drive - isolated ceramic base plate 2.8 V V Applications 6.5 V 3.3 mA mA 600 nA - AC - DC • power supplies - rectifiers with power factor correction and recuperation capability - UPS ns ns ns ns mJ mJ Cies QGon VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 300 A 17 2.25 nF µC RthJC RthJH (per IGBT) with heatsink compound 0.15 0.08 K/W K/W 225 Inductive load, TVJ = 125°C VCE = 600 V; IC = 300 A VGE = ±15 V; RG = 4.7 Ω 150 60 680 50 36 30 • drives © 2002 IXYS All rights reserved 1-2 MII 400-12E4 MID 400-12E4 MDI 400-12E4 Dimensions in mm (1 mm = 0.0394") Free wheeling diodes D1-D2 Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 450 290 Symbol Conditions Characteristic Values min. typ. max. VF IF = 300 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.3 1.7 IRM trr IF = 225 A; diF/dt = -2000 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 240 220 A ns RthJC RthJH (per diode) with heatsink compound 0.3 0.15 K/W K/W A A 2.7 V V Chopper anti parallel diodes D11-D12 Symbol Conditions Maximum Ratings IF25 IF80 TC = 25°C TC = 80°C 150 95 Symbol Conditions Characteristic Values min. typ. max. VF IF = 100 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C 2.3 1.7 IRM trr IF = 75 A; diF/dt = -750 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V 80 220 A ns RthJC RthJH (per diode) with heatsink compound 0.9 0.45 K/W K/W A A 2.7 V V Optional accessories for modules keyed twin plugs (UL758, style 1385, CSA class 5851, guide 460-1-1) • Type ZY180L with wire length 350mm – for pins 4 (yellow wire) and 5 (red wire) – for pins 11 (yellow wire) and 10 (red wire) • Type ZY180R with wire length 350mm – for pins 7 (yellow wire) and 6 (red wire) – for pins 8 (yellow wire) and 9 (red wire) Module Symbol Conditions Maximum Ratings -40...+150 -40...+125 °C °C 4000 V~ 2.25 - 2.75 4.5 - 5.5 Nm Nm TVJ Tstg VISOL IISOL ≤ 1 mA; 50/60 Hz Md Mounting torque Symbol Conditions dS dA Creepage distance on surface Strike distance in air Weight © 2002 IXYS All rights reserved (module, M6) (terminals, M6) Characteristic Values min. typ. max. 2 2 mm mm 250 g 2-2