SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. E B L Complementary to KTC8550S. L UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA PC * 350 mW Tj 150 Tstg -55 150 P P J RATING K SYMBOL 3 1 N CHARACTERISTIC H ) C MAXIMUM RATING (Ta=25 G A 2 Collector Power Dissipation Junction Temperature Storage Temperature Range D FEATURE DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M 1. EMITTER 2. BASE * PC : Package Mounted On 99.5% Alumina (10 8 0.6 3. COLLECTOR SOT-23 ) Marking h FE Rank BK Type Name ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Lot No. ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=15V, IE=0 - - 50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=0.5mA, IE=0 35 - - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 30 - - V hFE(1) (Note) VCE=1V, IC=50mA 100 - 300 hFE(2) VCE=1V, IC=350mA 60 - - VCE(sat) IC=500mA, IB=20mA - - 0.5 V Base-Emitter Voltage VBE VCE=1V, IC=500mA - - 1.2 V Transition Frequency fT VCE=5V, IC=10mA - 120 - MHz VCB=10V, f=1MHz, IE=0 - 13 - pF Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE(1) Classification 2002. 9. 3 C : 100 200, D : 150 Revision No : 0 300 1/1