PHOTOTRANSISTOR Part Number: WP3DP3BT Features Description zMECHANICALLY AND SPECTRALLY MATCHED TO THE Made with NPN silicon phototansistor chips. INFRARED EMITTING LED LAMP. zBLUE TRANSPARENT LENS. zRoHS COMPLIANT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. Specifications are subject to change without notice. SPEC NO: DSAH7501 REV NO: V.1 DATE: SEP/10/2007 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: W.J.Hua PAGE: 1 OF 3 ERP: 1101003911 Electrical / Optical Characteristics at TA=25°C Symbol Parameter Min. VBR CEO Collector-to-Emitter Breakdown Voltage VBR ECO Emitter-to-Collector Breakdown Voltage VCE (SAT) Collector-to-Emitter Saturation Voltage Collector Dark Current I CEO Typ. Max. Units Test Conditions 30 V IC=100uA Ee=0mW/c ㎡ 5 V IE=100uA Ee=0mW/c ㎡ 0.8 V IC=2mA Ee=20mW/c ㎡ 100 nA VCE=10V Ee=0mW/c ㎡ TR Rise Time (10％ to 90％ ) 15 us TF Fall Time (90％ to 10％ ) 15 us 0.5 mA I (ON) On State Collector Current 0.2 VCE = 5V IC=1mA RL=1000Ω VCE = 5V Ee=1mW/c ㎡ λ=940nm Absolute Maximum Ratings at TA=25°C Parameter Max.Ratings Collector-to-Emitter Voltage 30V Emitter-to-Collector Voltage 5V Power Dissipation at (or below) 25°C Free Air Temperature 100mW Operating Temperature -40°C To +85°C Storage Temperature -40°C To +85°C Lead Soldering Temperature (>5mm for 5sec) 260°C SPEC NO: DSAH7501 REV NO: V.1 DATE: SEP/10/2007 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: W.J.Hua PAGE: 2 OF 3 ERP: 1101003911 PACKING & LABEL SPECIFICATIONS WP3DP3BT SPEC NO: DSAH7501 REV NO: V.1 DATE: SEP/10/2007 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: W.J.Hua PAGE: 3 OF 3 ERP: 1101003911