SOT23 PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FMMTL717 ISSUE 1 – DECEMBER 1997 FEATURES Very low equivalent on-resistance; RCE(sat)=160mΩ at 1.25A COMPLEMENTARY TYPE – FMMTL617 PARTMARKING DETAIL – L77 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -12 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -5 V Continuous Collector Current IC -1.25 A Peak Pulse Current ICM -4 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot -500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C FMMTL717 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. TYP. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -12 -35 V IC=-100µA Collector-Emitter Breakdown Voltage V(BR)CEO -25 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -8.5 V IE=-100µA -12 -5 MAX. Collector Cut-Off Current ICBO -10 nA VCB=-10V Emitter Cut-Off Current IEBO -10 nA VEB=-4V Collector Cut-Off Current ICES -10 nA VCE=-10V Collector-Emitter Saturation Voltage VCE(sat) -24 -94 -160 -200 -40 -140 -240 -290 mV mV mV mV IC=-100mA, IB=-10mA* IC=-500mA, IB=-20mA* IC=-1A, IB=-50mA* IC=-1.25A,IB=-50mA Base-Emitter Saturation Voltage VBE(sat) -970 -1100 mV IC=-1.25A, IB=-50mA* Base-Emitter Turn On Voltage VBE(on) -875 -1000 mV IC=-1.25A, VCE=-2V* Static Forward Current Transfer Ratio hFE Transition Frequency fT 205 Collector-Base Breakdown Voltage Cobo 15 Switching times ton toff 76 149 300 300 180 100 50 490 450 275 180 110 IC=-10mA, VCE=-2V IC=-100mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-3A, VCE=-2V* 20 MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz ns ns IC=-1A, VCC=-10V IB1=IB2=-10mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% FMMTL717 TYPICAL CHARACTERISTICS 0.5 0.5 IC/IB=10 +25°C 0.4 VCE(sat) - (V) VCE(sat) - (V) 0.4 IC/IB=10 IC/IB=20 IC/IB=50 0.3 0.2 -55°C +25°C +100°C +150°C 0.3 0.2 0.1 0.1 0 0 1m 10m 100m 1 IC - Collector Current (A) 1m 10 VCE(sat) v IC VCE=2V 1 10 IC/IB=10 1.2 +100°C +25°C -55°C VBE(sat) - (V) hFE - Typical Gain 800 100m 10m IC - Collector Current (A) VCE(sat) v IC 400 0 0.8 -55°C +25°C +100°C +150°C 0.4 0 10m 1 100m IC - Collector Current (A) 1m 1m 10 10m 1 100m 10 IC - Collector Current (A) VBE(sat) v IC hFE v IC 10 VBE(on) - (V) IC - Collector Current (A) VCE=2V 1.6 -55°C +25°C +100°C +150°C 1.2 0.8 0.4 0 1 DC 1s 100ms 10ms 1ms 100µs 100m 10m 1m 10m 100m 1 IC - Collector Current (A) VBE(on) v IC 10 0.1 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 100