MII 4N24U

4N22U
4N23U
4N24U
6 PIN LCC OPTOCOUPLERS
OPTOELECTRONIC PRODUCTS
DIVISION
05/29/03
Features:
• MIL-PRF-19500/486 Qualified
• Base lead provided for conventional transistor
biasing
• High gain, high voltage transistor
• Miniature package saves circuit board area
• High voltage electrical isolation…1KV rating
Applications:
•
•
•
•
•
Line Receivers
Switchmode Power Supplies
Signal ground isolation
Process Control input/output isolation
Motor control
DESCRIPTION
High gain optocoupler utilizing GaAIAs infrared LED optically coupled to an N-P-N silicon phototransistor in a 6-pin leadless
chip carrier. The 4N22U, 4N23U and 4N24U optocouplers can be supplied to customer specifications as well as JAN, JANS,
JANTX, and JANTXV quality levels.
*ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage.................................................................................................................................................... ±1000V
Collector-Base Voltage ........................................................................................................................................................... 35V
Collector-Emitter Voltage........................................................................................................................................................ 35V
Emitter-Collector Voltage.......................................................................................................................................................... 4V
Input Diode Reverse Voltage.................................................................................................................................................... 2V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 1) ....................................40mA
Continuous Collector Current ..............................................................................................................................................50mA
Peak Diode Current .................................................................................................................................................................. 1A
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 2) ................................300mW
Operating Free-Air Temperature Range ............................................................................................................-55°C to +125°C
Storage Temperature..........................................................................................................................................-65°C to +125°C
Solder Temperature (10 seconds)...................................................................................................................................... 240°C
Notes:
1. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C above 65°C.
2. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C above 65°C.
* JEDEC registered data
Package Dimensions
Schematic Diagram
0.250 [6.35]
0.240 [6.10]
PIN 1
IDENTIFIER
0.080 [2.03]
0.066 [1.68]
1
A
C
3
0.175 [4.45]
0.165 [4.19]
E
0.028 [0.71]
0.022 [0.56]
0.098 [2.49]
0.082 [2.08]
2
1
6
3
4
5
0.105 [2.67]
0.095 [2.41]
6
K
B
5
4
0.055 [1.40]
0.045 [1.14]
0.070 [1.78]
5 PLS
0.060 [1.52]
ALL DIMENSIONS ARE IN INCHES [MILLIMETERS]
4N22U, 4N23U, and 4N24U
6 PIN LCC OPTOCOUPLERS
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: [email protected]
5 - 21
05/29/03
ELECTRICAL CHARACTERISTICS INPUT LED
TA = 25°C Unless otherwise specified
PARAMETER
SYMBOL
Input Diode Static Reverse Current
Input Diode Static Forward Voltage
°
-55 C
°
+25 C
°
+100 C
MIN
MAX
UNITS
TEST CONDITIONS
100
µA
VR = 2V
IR
VF
1.0
0.8
0.7
1.5
1.3
1.2
V
IF = 10mA
MAX
NOTE
OUTPUT TRANSISTOR
TA = 25°C Unless otherwise specified
SYMBOL
MIN
UNITS
TEST CONDITIONS
Collector-Base Breakdown Voltage
PARAMETER
V(BR)CBO
35
V
IC = 100µA, IB = 0, IF = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
35
V
IC = 1mA, IB = 0, IF = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
4
V
IC= 0, IE = 100µA, IF = 0
NOTE
COUPLED CHARACTERISTICS
TA = 25°C Unless otherwise specified
PARAMETER
SYMBOL
MIN
UNITS
TEST CONDITIONS
4N22U
4N23U
4N24U
mA
VCE = 5V, IB = 0, IF = 2mA
IC(ON)
0.15
0.2
0.4
4N22U
4N23U
4N24U
2.5
6.0
10.0
mA
IC(ON)
On State Collector Current
-55°C
4N22U
4N23U
4N24U
1.0
2.5
4.0
mA
IC(ON)
On State Collector Current
+100°C
4N22U
4N23U
4N24U
1.0
2.5
4.0
mA
IC(ON)
On State Collector Current
On State Collector Current
MAX
VCE = 5V, IB = 0, IF = 10mA
VCE = 5V, IB = 0, IF = 10mA
VCE = 5V, IB = 0, IF = 10mA
+25°C
IC(OFF)
100
nA
Off State Collector Current +100°C
IC(OFF)
100
µA
VCE = 20V, IB = 0, IF = 0mA
VCE(SAT)
VCE(SAT)
VCE(SAT)
0.3
0.3
0.3
V
V
V
IC = 2.5mA, IB = 0, IF = 20mA
IC = 5mA, IB = 0, IF = 20mA
IC = 10mA, IB = 0, IF = 20mA
Off State Collector Current
Collector-Emitter Saturation Voltage
4N22U
4N23U
4N24U
NOTE
11
VCE = 20V, IB = 0, IF = 0mA
Input to Output Resistance
ALL
RI-O
Ω
VIN-OUT = 1kV
1
Input to Output Capacitance
ALL
CI-O
5
pF
f = 1MHz, VIN-OUT = 1kV
1
4N22U
4N23U
4N24U
tr
tr
tr
15
15
20
µs
4N22U
4N23U
4N24U
tf
tf
tf
15
15
20
µs
Rise Time
Fall Time
10
µs
VCC = 10V, IF = 10mA, RL = 100Ω
µs
µs
VCC = 10V, IF = 10mA, RL = 100Ω
µs
NOTE: 1. These parameters are measured between all phototransistor leads shorted together and with both input diode leads shorted together.
SELECTION GUIDE
PART NUMBER
4N22U
4N23U
4N24U
JAN4N22U
JAN4N23U
JAN4N24U
JANTX4N22U
JANTX4N23U
JANTX4N24U
JANTXV4N22U
JANTXV4N23
JANTXV4N24U
JANS4N22U
JANS4N23U
JANS4N24U
PART DESCRIPTION
Commercial
Commercial
Commercial
JAN Screened
JAN Screened
JAN Screened
JANTX Screened
JANTX Screened
JANTX Screened
JANTXV Screened
JANTXV Screened
JANTXV Screened
JANS Screened
JANS Screened
JANS Screened
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972) 272-3571 • Fax (972) 487-6918
www.micropac.com E-MAIL: [email protected]
5 - 21