Transistor Output Bulkhead Optocoupler

66281
Transistor Output Bulkhead Optocoupler
OPTOELECTRONIC PRODUCTS
DIVISION
03/31/2008
Applications:
Features:
• High reliability
• Base lead provided for conventional transistor
biasing
• Fully shielded circuit
• Hermetically sealed for reliability and stability
• Stability over wide temperature range
• Available with attached wires
• 500 Volt electrical isolation
•
•
•
•
Line Receivers
Switchmode Power Supplies
Signal ground isolation
Process Control input/output isolation
DESCRIPTION
The 66281 Optocoupler consists of an 880nm GaAlAs LED optically coupled to a silicon phototransistor. Packaged in a
hermetically sealed metal case and mounted to a bulk head housing. Available as screened, unscreened or tested to
customer specifications and with or without wires.
ABSOLUTE MAXIMUM RATINGS
Input to Output Voltage ....................................................................................................................................................... 500 V
Collector-Base Voltage .......................................................................................................................................................... 45 V
Collector-Emitter Voltage (See Note 1) ................................................................................................................................. 40 V
Emitter-Base Voltage ............................................................................................................................................................... 7 V
Input Diode Reverse Voltage................................................................................................................................................... 2 V
Input Diode Continuous Forward Current at (or below) 65°C Free-Air Temperature (see note 2) ................................... 40 mA
Continuous Collector Current ............................................................................................................................................. 50 mA
Peak Diode Current (See Note 3)............................................................................................................................................ 1 A
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (see Note 4) ...............................300 mW
Operating Free-Air Temperature Range ............................................................................................................-55°C to +125°C
Storage Temperature ..........................................................................................................................................-65°C to +150°C
Lead Temperature (1/16” (1.6mm) from case for 10 seconds) .......................................................................................... 240°C
Notes:
1. This value applies with the emitter-base diode open-circuited and the input-diode current equal to zero.
2. Derate linearly to 125°C free-air temperature at the rate of 0.67 mA/°C.
3. This value applies for tw≤1us. PRR<300 pps.
4. Derate linearly to 125°C free-air temperature at the rate of 3 mW/°C.
Package Dimensions
Schematic Diagram
GREEN WIRE
(EMITTER)
Ø0.197
COLLECTOR
0.312
BLUE WIRE
(BASE)
WHITE WIRE
(COLLECTOR)
BASE
CASE
A
Ø0.250
C
11.000 MIN.
EMITTER
Ø0.019
Ø0.016
7 PLCS
0.300
0.500 MIN.
0.225
0.215
0.225
0.215
1.220 MIN.
0.250 - 40 UNEF - 2A
0.243
0.233
0.243
0.233
E
0.250 - 40 THD
K
11.000 MIN.
B
0.050 6 PLCS
CASE
ANODE
BLACK WIRE
(CATHODE)
NOTE: ALL WIRES ARE 26 AWG
WITH TEFLON INSULATION.
CATHODE
0.312
-X01
RED WIRE
(ANODE)
-X11
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM
66281
Transistor Output Bulkhead Optocoupler
03/31/2008
INPUT DIODE CHARACTERISTICS TA = 25°C unless otherwise specified.
PARAMETER
SYMBOL
MIN
MAX
Input Diode Static Reverse Current
IR
Input Diode Static Forward Voltage
VF
0.8
UNITS
TEST CONDITIONS
100
µA
VR = 2 V
1.5
V
IF = 10 mA
UNITS
TEST CONDITIONS
OUTPUT TRANSISTOR CHARACTERISTICS TA = 25°C unless otherwise noted
PARAMETER
SYMBOL
MIN
Collector-Base Breakdown Voltage
V(BR)CBO
45
V
IC = 100 µA, IE = 0, IF = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
V
IC = 1 mA, IB = 0, IF = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
7
V
IC = 0 mA, IE = 100 µA, IF = 0
100
nA
VCE = 20 V
MAX
UNITS
TEST CONDITIONS
mA
VCE = 5 V, IF = 1 mA
V
IF = 2 mA, IC = 1 mA
V
II-O = 100 nA
Off-State Collector Current
MAX
ICEO
COUPLED CHARACTERISTICS TA = 25°C unless otherwise noted
PARAMETER
Current Transfer Ratio
Collector-Emitter Saturation Voltage
SYMBOL
MIN
IC(ON)
1
0.3
VCE(SAT)
Input-Output Isolation Voltage
500
V I-O
Rise Time
tr
20
µs
Fall Time
tf
20
µs
VCC = 10 V, IF = 10 mA,
RL = 100 Ω
VCC = 10 V, IF = 10 mA,
RL = 100 Ω
RECOMMENDED OPERATING CONDITIONS:
PARAMETER
SYMBOL
MIN
MAX
UNITS
Input Current, Low Level
IFL
0
10
µA
Input Current, High Level
IFH
1
20
mA
Operating Temperature
TA
-55
100
°
C
SELECTION GUIDE
PART NUMBER
66281-001
66281-101
66281-011
66281-101
PART DESCRIPTION
Commercial
Screened
Commercial with wires
Screened with wires
MICROPAC INDUSTRIES, INC. OPTOELECTRONIC PRODUCTS DIVISION • 725 E.Walnut St., Garland, TX 75040 • (972)272-3571 • Fax (972)487-6918
www.micropac.com E-MAIL: OPTOSALES @ MICROPAC.COM