MIMIX XS1000_0610

7.0-13.0 GHz GaAs MMIC
6-Bit Phase Shifter
S1000
October 2006 - Rev 17-Oct-06
Features
6 Bit Phase Shifter
Digital Control (0 – 3.3 V)
LSB = 5.625 °
25 dBm P1dB Input Compression
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadband’s 7.0 – 13.0 GHz phase shifter is
digitally controlled with 6-Bit operation and a LSB of
5.625°. The device uses a single supply voltage of
-7.5V and digital control voltage of 0 – 3.3V. This
MMIC uses Mimix Broadband’s 0.5um GaAs PHEMT
device technology, and is based upon optical gate
lithography to ensure high repeatability and
uniformity. The chip has surface passivation to
protect and provide a rugged part with backside via
holes and gold metallization to allow either a
conductive epoxy or eutectic solder die attach
process. The device is well suited for radar
applications.
Absolute Maximum Ratings
Supply Voltage (Vss)
Supply Current (Iss)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
-10.0 VDC
10.0 mA
30.0 dBm
-65 to +165 OC
-55 to MTTF Table 3
MTTF Table 3
(3) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Insertion Loss @ 10 GHz (S21), Reference Level
Input Return Loss (S11), All States
Output Return Loss (S22), All States
Peak to Peak Gain Variation ( G)
RMS Phase Error
RMS Attentuation Error
Input 1-dB Compression Point (IP1dB)
Switching Speed
Vcontrol High
Vcontrol Low
Vss
Iss
Units
GHz
dB
dB
dB
dB
deg
dB
dBm
ns
VDC
VDC
VDC
mA
Min.
7.0
3.3
0.0
-
Typ.
6.2
15.0
15.0
<3.0
2.5-9.00
<0.9
25
-7.5
10
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Max.
13.0
45
5.0
0.8
-
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.0-13.0 GHz GaAs MMIC
6-Bit Phase Shifter
S1000
October 2006 - Rev 17-Oct-06
Measurements
Relative Phase - All States
Insertion Loss - Reference State
10
400
9
350
Insertion Loss [dB]
Relative phase [degrees]
8
300
250
200
150
7
6
5
4
3
100
2
50
1
0
0
7
8
9
10
11
12
13
7
8
9
10
Frequency [GHz]
11
12
13
12
13
Frequency [GHz]
Gain Variation - All States
Input Return Loss - All States
5
0
4
-5
2
-10
1
S11 [dB]
Gain Variation [dB]
3
0
-15
-1
-20
-2
-3
-25
-4
-5
-30
7
8
9
10
11
12
13
7
8
9
Frequency [GHz]
10
11
Frequency [GHz]
Phase Error
Output Return Loss - All States
20
0
18
-5
RMS Phase Error [°]
16
S22 [dB]
-10
-15
-20
14
12
10
8
6
4
RMS
Max
2
-25
0
-30
7
7
8
9
10
Frequency [GHz]
11
12
13
8
9
10
11
12
13
Frequency [GHz]
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.0-13.0 GHz GaAs MMIC
6-Bit Phase Shifter
S1000
October 2006 - Rev 17-Oct-06
Measurements (cont.)
Insertion Loss vs Temp - Reference State
Attenuation Error
10
RMS
Max
2.5
9
S 21 reference state [dB]
Attenuation error [dB]
3
2
1.5
1
0.5
0
8
7
6
5
4
3
T=25
T=60
T=95
2
1
7
8
9
10
11
12
13
0
Frequency [GHz]
7
8
9
10
11
12
13
Frequency [GHz]
RMS Attenuation Error vs Temp
RMS Phase Error vs Temp
20
2.5
T=25°C
T=60°C
T=95°C
18
T=25°C
T=60°C
T=95°C
16
RMS Phase Error [°]
RMS attenuation error [dB]
3
2
1.5
1
14
12
10
8
6
4
0.5
2
0
0
7
8
9
10
11
12
13
7
8
9
10
Frequency [GHz]
4
4
3
3
2
1
0
-1
-2
1
0
-1
-2
-3
-4
-4
-5
0
-5
4
6
8
10
12
14
16
13
2
-3
2
12
Relative Phase vs Input Power @ 10 GHz - Major States
5
Relative phase, S21 [°]
Relative Loss, S21 [dB]
Relative Loss vs Input Power @ 10 GHz - Major States
5
0
11
Frequency [GHz]
18
20
22
24
26
2
4
6
8
10
12
14
16
18
20
22
24
26
Pin [dBm]
Pin [dBm]
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.0-13.0 GHz GaAs MMIC
6-Bit Phase Shifter
S1000
October 2006 - Rev 17-Oct-06
Measurements (cont.)
Phase Error vs State
20.00
f=7 GHz
Phase error [°]
15.00
10.00
f=8 GHz
5.00
f=10 GHz
0.00
f=11 GHz
-5.00
f=13 GHz
-10.00
0
8
16
24
32
State [-]
40
48
56
64
Logic Truth Table - Major States
Phase Shift
(degrees)
0º
5.625º
11.25º
22.5º
45º
90º
180º
354.375º
I1
I2
I3
I4
I5
0
1
0
0
0
0
0
1
0
0
1
0
0
0
0
1
0
0
0
1
0
0
0
1
0
0
0
0
0
1
0
1
0
0
0
0
0
0
1
1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.0-13.0 GHz GaAs MMIC
6-Bit Phase Shifter
S1000
October 2006 - Rev 17-Oct-06
Mechanical Drawing
2.104
(0.828)
0.998 1.398 1.798
(0.393) (0.550) (0.708)
0.798 1.198 1.598 1.998
(0.314) (0.472) (0.629) (0.787)
2
1.267
(0.499)
3
4
5
6
7
8
1
1.267
(0.499)
9
0.0
0.0
(Note: Engineering designator is I0005360)
2.973
(1.171)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All Bond Pads are 0.100 x 0.100 (0.004 x 0.004).
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.88 mg.
Bond Pad #1 (RF In)
Bond Pad #2 (Input 1)
Bond Pad #3 (Input 2)
Bond Pad #4 (Input 3)
Bond Pad #5 (Vss)
Bond Pad #6 (Input 4)
Bond Pad #7 (Input 5)
Bond Pad #8 (Input 6)
Bond Pad #9 (RF Out)
Bias Arrangement
Bypass Capacitors - See App Note [2]
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
7.0-13.0 GHz GaAs MMIC
6-Bit Phase Shifter
S1000
October 2006 - Rev 17-Oct-06
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the
human body and the environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support
devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As
used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions
for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical
component is any component of a life support device or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation.
Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The
mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die
Mat DM6030HK or DM6030HK-Pt cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy
sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die
periphery. For additional information please see the Mimix "Epoxy Specifications for Bare Die" application note. If
eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.0012 thick, placed between the
die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing
action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280º C (Note: Gold Germanium should be avoided). The
work station temperature should be 310ºC +/- 10º C. Exposure to these extreme temperatures should be kept to
minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air
bridges and force impact are critical during placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the
die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99%
pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge
or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding
is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized.
Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the
package or substrate. All bonds should be as short as possible.
Ordering Information
XS1000-BD-000W
XS1000-BD-000V
XS1000-BD-EV1
Where “W” is RoHS compliant die packed in waffle trays
Where “V” is RoHS compliant die packed in vacuum release gel paks
XS1000 die evaluation module
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 6
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.