NIEC P2H30QH15

TENTATIVE
SBD MODULE
30A/150V
P2H30QH15
OUTLINE DRAWING
FEATURES
* Compatible with Isolated Base SOT227
* Dual Separated Diodes
* Extremely Low Forward Voltage Drop
* Low Power Loss, High Efficiency
* High Surge Capability
See the Next Page
TYPICAL APPLICATIONS
* High Frequency Rectification
Maximum Ratings
Approx Net Weight:35g
Parameter
Symbol
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
VRRM
VRSM
Parameter
Type / Grade
P2H30QH15
150
-
Conditions
Average Rectified Output Current *1
IO(AV)
Surge Forward Current *1
IFSM
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Terminals
Mounting torque
Case mounting
Tjw
Tstg
Viso
Ftor
Unit
-
V
Max Rated
Value
Unit
30
A
300
A
50Hz Half Sine Wave condition
Tc=To Be Determined
50 Hz Half Sine Wave,1Pulse
Non-repetitive
-40 to +150 °C
-40 to +125 °C
Base Plate to Terminals, AC1min
2500
V
M4Screw
1.5(1.4)
N •m
M4Screw
1.5(1.4)
with Thermal Compound
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Thermal Resistance *1
*1: Value Per 1Arm
Symbol
Test Conditions
IRM
VRM= VRRM, Tj= 25°C
VFM IFM= 30A, Tj=25°C
Rth(j-c) Junction to Case
Base Plate to Heat Sink with Thermal
Rth(c-f)
Compound
Max. Unit
20
1.05
TBD
0.3
µA
V
°C/W
P2H30QH15
OUTLINE DRAWING (Dimensions in mm)
3
1
4
2