ICEMOS ICE8N70FP

Preliminary Data Sheet
ICE8N70FP
Product Summary
ICE8N70FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
ID
TA=25oC
8A
Max
V(BR)DSS
ID=250uA
700V
Min
rDS(on)
VGS=10V
0.38Ω
Typ
Qg
VDS=480V
41nC
Typ
D
G
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Maximum ratings b
, at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
T0220 Full-PAK
Isolated (T0-220)
1=Gate, 2=Drain,
3=Source
Value
Unit
Continuous drain current
ID
Tc=25oC
8
A
Pulsed drain current
ID, pulse
Tc=25oC
24
A
Avalanche energy, single pulse
E AS
ID=4A
340
mJ
Avalanche current, repetitive
I AR
limited by Tjmax
4
A
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=8A,
Tj=125oC
50
V/ns
Gate source voltage
VGS
Power dissipation
Ptot
Operating and storage temperature
Tj, Tstg
Mounting torque
Static
±20
AC (f>1Hz)
±30
Tc=25oC
35
-55 to +150
M 2.5 screws
50
V
W
o
C
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-8N70FP-000-2
02/25/2013
1
Preliminary Data Sheet
ICE8N70FP
Parameter
Symbol
Values
Conditions
Min
Typ
Max
-
-
3.5
Unit
Thermal characteristics
Thermal resistance, junctioncase a
RthJC
o
Thermal resistance, junctionambient a
RthJA
leaded
-
-
80
Soldering temperature, wave
soldering only allowed at leads
T sold
1.6mm (0.063in.) from
case for 10 s
-
-
260
Electrical characteristics
Gate source leakage current
o
C
b , at T =25oC, unless otherwise specified
j
Static characteristics
Drain-source breakdown voltage V(BR)DSS
VGS(th)
Gate threshold voltage
Zero gate voltage drain current
C/W
IDSS
IGSS
VGS=0 V, ID=250µA
700
730
-
VDS=VGS, ID=250µA
VDS=700V, VGS=0V,
o
Tj=25 C
2.1
3
3.9
-
0.1
1
VDS=700V, VGS=0V,
o
Tj=150 C
-
-
100
VGS=±20 V, VDS=0V
-
-
100
-
0.38
0.45
µA
o
VGS=10V, ID=4A, Tj=25 C
Drain-source
on-state resistance
RDS (on)
Gate resistance
RG
V
nA
Ω
VGS=10V, ID=4A,
o
Tj=150 C
-
0.95
-
f=1 MHZ, open drain
-
5
-
-
1250
-
-
600
-
-
5
-
-
12
-
-
6
-
-
3.5
-
-
54
7
-
Ω
Dynamic characteristics
Input capacitance
Ciss
Output capacitance
Reverse transfer capacitance
Coss
Transconductance
gfs
Turn-on delay time
Rise time
td(on)
Turn-off delay time
td(off)
Fall time
tf
SP-8N70FP-000-2
02/25/2013
Crss
tr
VGS=0 V, VDS=25 V,
f=1 MHz
VDS>2*ID*RDS, ID=4A
VDS=480V, VGS=10V,
ID=8A, RG=4Ω (External)
pF
S
ns
-
2
Preliminary Data Sheet
ICE8N70FP
Parameter
Symbol
Conditions
Values
Unit
Min
Typ
Max
-
7.1
-
-
14
-
-
41
-
-
5.2
-
V
-
0.9
1.2
V
-
330
-
ns
-
4.4
-
µC
-
25
-
A
Gate charge characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
Gate plateau voltage
Vplateau
VDS=480 V, ID=8A,
VGS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irm
SP-8N70FP-000-2
02/25/2013
VGS=0V, IS=IF
VRR=480V, IS=IF,
diFIdt=100 A/µS
3
Preliminary Data Sheet
ICE8N70FP
SP-8N70FP-000-2
02/25/2013
4
Preliminary Data Sheet
ICE8N70FP
SP-8N70FP-000-2
02/25/2013
5
Preliminary Data Sheet
ICE8N70FP
SP-8N70FP-000-2
02/25/2013
6
Preliminary Data Sheet
ICE8N70FP
SP-8N70FP-000-2
02/25/2013
7
Preliminary Data Sheet
ICE8N70FP
SP-8N70FP-000-2
02/25/2013
8
Preliminary Data Sheet
ICE8N70FP
ICEMOS SUPERJUNCTION PATENT PORTFOLIO
ICEMOS GRANTED PATENTS
US7,429,772
US7,439,178
US7,446,018
US7,579,607
US7,723,172
US7,795,045
US7,846,821
US7,944,018
US8,012,806
US8,030,133
3D SEMI PATENTS LICENSED TO ICEMOS
US7,041,560B2
US7,023,069B2
US7,364,994
US7,227,197B2
US7,304,944B2
US7,052,982B2
US7,339,252
US7,410,891
US7,439,583
US7,227,197B2
US6,635,906
US6,936,867
US7,015,104
US9,109,110
US7,271,067
US7,354,818
US7,052,982,
US7,199,006B2
Note: additional patents in China, Korea, Japan, Taiwan, Europe have also been granted to IceMOS and 3D Semi for
Superjunction MOSFETs with 70 additional Patent applications in process in the USA and the above listed countries.
SP-8N70FP-000-2
02/25/2013
9