Advance Technical Information PolarTM High Speed VCES = = ICP VCE(sat) ≤ IXGQ85N33PCD1 IGBT with Anti-Parallel Diode 330 V 340 A 2.1 V for PDP Sustain Circuit Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM TO-3P 330 V ±30 V IC25 TC = 25°C, IGBT chip capability 85 A ICP TJ ≤ 150°C, tp ≤ 1 μs, D ≤ 1% 340 A IDP TJ ≤ 150°C, tp < 10 μs 40 A IC(RMS) Lead current limit 75 A SSOA VGE = 15 V, TVJ = 150°C, RG = 20 Ω ICM = 96 A (RBSOA) Clamped inductive load, VCE < 300 V PC TC = 25°C 150 W TJ TJM Tstg -55 ... +150 150 -55 ... +150 °C °C °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body 300 °C Md 1.3/10 Nm/lb.in. 5.5 Weight Symbol Test Conditions (TJ = 25°C unless otherwise specified) IC = 1 mA, VCE = VGE ICES VCE = 330 V VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) VGE = 15V, C E G = Gate E = Emitter (TAB) C = Collector TAb = Collector Features • International standard package • Fast tfi for minimum turn off • • switching losses MOS Gate turn-on - drive simplicity Positive dVsat/dt for paralleling 260 Mounting torque VGE(th) G ≤ g Characteristic Values Min. Typ. Max. 3.0 6.0 V 1 μA 200 μA TJ = 125°C ±100 nA IC = 50 A Note 1 TJ = 125°C 1.43 1.47 IC = 100 A 1.85 TJ = 125°C 2.0 © 2006 IXYS CORPORATION, All rights reserved 2.1 V V 3.0 V V DS99610D(02/07) IXGQ85N33PCD1 SymbolTest Conditions (TJ = 25°C unless otherwise specified) Characteristic Values Min. Typ. Max. 49 S 2200 pF 155 pF Cres 25 pF Qg 80 nC 15 nC 23 nC 20 ns 43 ns 87 ns gfs IC = 43 A, VCE = 10 V 30 Cies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 43 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) Resistive load, TJ = 25°C IC = 50 A, VGE = 15 V VCE = 240 V, RG = 5 Ω tfi 72 td(on) 20 ns 95 ns 88 ns 130 ns tri td(off) tfi Resistive load, TJ = 125°C IC = 50 A, VGE = 15 V VCE = 240 V, RG = 5 Ω ns 0.833 K/W RthJC 0.25 RthCK Reverse Diode K/W Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. SymbolTest Conditions VF 350 TO-3P (IXTQ) Outline IF = 20A,VGE = 0 V, Note 1 IF = 40A,VGE = 0 V, Note 1 2.0 2.8 V V 2.5 K/W 250 ns RthJC trr Note 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 % IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXGQ85N33PCD1 Fig. 1. Output Char acte r is tics @ 25 ºC Fig. 2. Exte nde d Output Char acte r is tics @ 25 ºC 180 300 V GE = 15V 160 13V 11V V GE = 15V 240 13V 11V 210 120 I C - Amperes I C - Amperes 140 270 9V 100 80 7V 60 40 180 9V 150 120 90 7V 60 20 30 5V 5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 1 2 3 V C E - V olts 6 7 8 9 10 125 150 Fig. 4. De pe nde nce of V CE( sat) on Te m pe r atur e 1.8 180 V GE = 15V 1.7 13V 11V 1.6 140 V C E ( sat )- Normalized 160 I C - Amperes 5 V C E - V olts Fig. 3. Output Char acte r is tics @ 125 ºC 9V 120 100 80 7V 60 40 V GE = 15V 1.5 I C = 170A 1.4 1.3 1.2 I C = 85A 1.1 1.0 0.9 5V 20 I C = 42.5A 0.8 0 0.7 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 V CE - V olts 25 50 75 100 TJ - Degrees Centigrade Fig. 5. Colle ctor -to-Em itte r V oltage vs . Gate -to-Em itte r voltage Fig. 6. Input Adm ittance 200 6.0 5.5 180 TJ = 25 ºC 5.0 160 I C = 170A 4.5 85A 42.5A 4.0 I C - Amperes V C E - Volts 4 3.5 3.0 140 120 100 80 2.5 60 2.0 40 1.5 20 1.0 TJ = 125 ºC 25 ºC - 40 ºC 0 5 6 7 8 9 10 11 12 V G E - V olts © 2006 IXYS CORPORATION, All rights reserved 13 14 15 4 4.5 5 5.5 6 6.5 7 7.5 V G E - V olts 8 8.5 9 9.5 IXGQ85N33PCD1 Fig. 8. Re s is tive Tur n-On Ris e Tim e vs . Junction Te m pe r atur e Fig. 7. Trans conductance 60 160 TJ = - 40 ºC 140 25 ºC 50 I C = 85A t r - Nanoseconds g f s - Siemens 125 ºC 40 30 20 10 120 R G = 5Ω 100 V GE = 15V V CE = 240V 80 I C = 42.5A 60 40 20 I C = 21A 0 0 0 40 80 120 160 200 240 25 280 35 45 Fig. 9. Re s is tive Tur n-On Ris e Tim e vs . Colle ctor Curr e nt 75 85 95 105 115 125 180 TJ = 125 ºC R G = 5Ω 140 I C = 85A 160 V GE = 15V V CE = 240V 120 t r - Nanoseconds t r - Nanoseconds 65 Fig. 10. Re s is tive Tur n-On Ris e Tim e vs . Gate Re s is tance 160 100 TJ = 25 ºC 80 60 40 140 120 I C = 42.5A 100 TJ = 125 ºC 80 V GE = 15V 60 V CE = 240V I C = 21A 40 20 20 20 30 40 50 60 70 80 4 90 6 8 10 12 14 16 18 20 I C - A mperes R G - Ohms Fig. 11. Re s is tive Tur n-On De lay Tim e vs . Gate Re s is tance Fig. 12. Re s is tive Turn-Off Sw itching Tim e vs . Junction Te m pe r atur e 23.5 180 23 TJ = 125 ºC 22.5 V GE = 15V t d(off) I C = 42.5A V CE = 240V 22 21.5 I C = 85A 21 20.5 I C = 21A 20 19.5 Switching Time - Nanoseconds t d ( o n ) - Nanoseconds 55 TJ - Degrees Centigrade I C - A mperes 19 I C = 21A tf - - - - - - 160 I C = 85A R G = 5Ω 140 V GE = 15V I C = 42.5A V CE = 240V 120 100 I C = 21A 42.5A 85A 80 60 4 6 8 10 12 14 16 18 20 22 24 R G - Ohms IXYS reserves the right to change limits, test conditions and dimensions. 25 50 75 100 T J - Degrees Centigrade 125 150 IXGQ85N33PCD1 Fig. 13. Re s is tive Tur n-Off Sw itching Tim e vs . Colle ctor Curr e nt Fig. 14. Re s is tive Tur n-off Sw itching Tim e vs . Gate Re s is tance 240 t d(off) TJ = 125 ºC 180 , tf - - - - - R G = 5Ω , 160 V GE = 15V V CE = 240V 140 120 25 ºC < TJ < 125 ºC 100 80 60 t d(off) 220 Switching Time - Nanoseconds Switching Time - Nanoseconds 200 TJ = 25 ºC 40 , tf - - - - - T J = 125 ºC , V GE = 15V 200 V CE = 240V 180 I C = 21A 160 85A 42.5A 140 120 21A 42.5A 85A 100 80 60 20 30 40 50 60 70 80 90 0 2 4 6 8 I C - A mperes Fig. 15. Re ve r s e -Bias Safe Ope r ating Are a 12 14 16 18 20 Fig. 16. Gate Charge 16 100 90 V CE = 150V 14 80 I C = 42.5A 12 70 60 V G E - Volts I C - Amperes 10 R G- Ohms 50 40 30 TJ = 150 ºC 20 R G = 20Ω 10 8 6 4 dV/dT < 10V/ns 10 I G = 10m A 2 0 0 50 100 150 200 250 300 0 350 10 V C E - V olts 20 Q 30 G 40 50 60 70 80 - nanoCoulombs Fig. 18. M axim um Tr ans ie nt The r m al Re s is tance Fig. 17. Capacitance 1.00 10000 f = 1 MH z R ( t h ) J C - ºC / W Capacitance - p F C i es 1000 C oes 100 0.10 C res 10 0.01 0 5 10 15 20 25 30 V C E - V olts © 2006 IXYS CORPORATION, All rights reserved 35 40 0.00001 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10