PolarHVTM Power MOSFET IXTA 3N50P IXTP 3N50P IXTY 3N50P VDSS ID25 RDS(on) = 500 V = 3.6 A ≤ 2.0 Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Maximum Ratings 500 V 500 V ±30 ±40 VGSS VGSM TO-220 (IXTP) V V G ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 3.6 8 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 3 10 180 A mJ mJ dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 20 Ω 10 V/ns TC = 25° C 70 W TO-252 (IXTY) -55 ... +150 150 -55 ... +150 °C °C °C G 300 260 °C °C PD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-220 TO-263 TO-252 TO-263 (IXTA) G (TO-220) S (TAB) G = Gate S = Source 1.13/10 Nm/lb.in. 4 3 0.8 g g g l Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 50µA 3.0 IGSS VGS = ± 30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved TJ = 125° C D = Drain TAB = Drain Features l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) S (TAB) TJ TJM Tstg TL TSOLD (TAB) D S l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect V 5.5 V ±100 nA 5 50 µA µA 2.0 Ω Advantages l l l Easy to mount Space savings High power density DS99200E(12/05) IXTA 3N50P IXTP 3N50P IXTY 3N50P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 2.5 3.5 S 409 pF 48 pF Crss 6.1 pF td(on) 15 ns Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Coss tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 15 ns td(off) RG = 20 Ω (External) 38 ns 12 ns 9.3 nC 3.3 nC 3.4 nC tf Qg(on) VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgs Qgd RthJC TO-263 (IXTA) Outline 1.8° C/W (TO-220) RthCS ° C/W 0.25 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 3 A ISM Repetitive 5 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 3 A, -di/dt = 100 A/µs VR = 100 V, VGS = 0 V 400 TO-220 (IXTP) Outline ns TO-252 AA (IXTY) Outline Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 2.28 BSC 4.57 BSC H L 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 0.040 0.050 0.115 1.02 1.27 2.92 Pins: 1 - Gate 3 - Source 0.090 BSC 0.180 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain 4 - Drain IXTA 3N50P IXTP 3N50P IXTY 3N50P Fig. 2. Exte nde d Output Char acte r is tics Fig. 1. Output Char acte r is tics @ 25 º C @ 25 º C 8 3 V GS = 10V 2.7 2.4 V GS = 10V 7 8V 7V 8V 6 I D - Amperes I D - Amperes 2.1 1.8 1.5 1.2 6V 0.9 5 7V 4 3 2 0.6 6V 1 0.3 0 0 0 1 2 3 4 5 0 6 3 6 9 Fig. 3. Output Char acte r is tics 18 21 24 27 30 Fig. 4. RD S(on ) Nor m aliz e d to 0.5 ID 25 V alue vs . Junction Te m pe r atur e @ 125 º C 2.50 3 V GS = 10V 2.7 V GS = 10V 2.25 R D S ( o n ) - Normalized 8V 7V 2.4 I D - Amperes 15 V D S - V olts V D S - V olts 2.1 1.8 6V 1.5 1.2 0.9 0.6 0.3 2.00 1.75 I D = 3A 1.50 I D = 1.5A 1.25 1.00 0.75 5V 0 0.50 0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade V D S - V olts Fig. 6. Dr ain Curr e nt vs . Cas e Te m pe r ature Fig. 5. RD S(on) Nor m aliz e d to 0.5 ID 25 V alue vs . ID 3.5 3.2 V GS = 10V 3.0 2.8 TJ = 125 º C 2.5 2.4 I D - Amperes R D S ( o n ) - Normalized 12 2.0 1.6 1.5 1.0 TJ = 25 º C 1.2 2.0 0.5 0.8 0.0 0 1 2 3 4 5 I D - A mperes © 2006 IXYS All rights reserved 6 7 8 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 3N50P IXTP 3N50P IXTY 3N50P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 8 6 7 5 4 g f s - Siemens I D - Amperes 6 TJ = 125 º C 3 25 º C -40 º C 2 TJ = -40º C 25º C 5 125º C 4 3 2 1 1 0 0 4.5 5 5.5 6 6.5 7 0 V G S - V olts 1 4 5 6 Fig. 10. Gate Char ge 9 10 8 9 V D S = 250V 8 I D = 1.5A 7 I G = 10m A 7 V G S - Volts 6 5 4 TJ = 125 º C 3 3 I D - Amperes Fig. 9. Sou r ce Cu r r e nt vs . Sour ce -To-Dr ain V oltage I S - Amperes 2 6 5 4 3 TJ = 25 º C 2 2 1 1 0 0 0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0 0.95 1 2 3 Q V S D - V olts 4 G 5 6 7 8 9 10 - nanoCoulombs Fig. 12. For w ar d-Bias Safe Ope r ating Ar e a Fig. 11. Capacitance 1000 10 C is s 25µs 100 I D - Amperes Capacitance - picoFarads R D S(on) Lim it C os s 100µs 1 1m s 10 DC 10m s TJ = 150ºC C rs f = 1MH z TC = 25ºC 0.1 1 0 5 10 15 20 25 30 35 40 V D S - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - V olts 1000 IXTA 3N50P IXTP 3N50P IXTY 3N50P Fig. 13. Maximum Transient Thermal Resistance R( t h ) J C - ºC / W 10.0 1.0 0.1 0.1 1 10 Pulse Width - milliseconds © 2006 IXYS All rights reserved 100 1000