MMA-44 45933H-02 4..4 – 5.9 GHzz 2W High E Efficiency Lin near Power A Amplifier Decemb ber 2012 Fe eatures:: • • • • • • • • Appliications: 30 dB Gain G 33 dBm m P-1dB OIP3 45 5 dBm 26.0 dB Bm Linear Po out @ 2.5% EVM E (802.11 64QAM) 6 Fully Matched M Input and Outputt for Easy Ca ascade Internal Bias Tee e Mount Package with Ro oHS Complia ance Surface MTTF > 100 years @ 85ºC ambie ent temperatture • • • 802.16d/e W WiMax 802.11a WL LAN Point-To-Po oint Radio Application ns escriptio on: De The e MMA-445933H-02 is a power p amplifie er with the Sta ate-of-the-Artt linear powerr-added-efficie ency between n 4.4 GHz and d 5.9 GHz fre equency band d. Based on advanced robu ust HFET devvice technolog gy, the lineariity of this pow wer am mplifier is 26 dBm linear pow wer at 2.0% EVM E and achieves an ACP PR better than -38 dBc. The modulation test patttern is 802.16x 64QAM. This T linear pow wer amplifier also has high h gain. Ideal a applications in nclude the driver and the e output powe er stage of WiMax and WLA AN infrastruc ctures and acccess points. Itt also can be used for PTP P (PointTo--Point) radio applications for f this band. Ty ypical RF R Performance: Vdd1=Vdd d2=7.5V,Vg1= =-0.8V,Vg2=-0 0.8,Idq1=410 0mA,Idq2=62 20mA Ta= =25 ºC, Z0=5 50 ohm Units s T Typical Data a Fre equency Range R MHz 4400-5900 Ga ain (Typ / Min) M dB 29 / 33 +/-dB B 2.5 / 4.5 Input Return n Loss dB 10 Ou utput Retur rn Loss dB 7 Ou utput P1dB B dBm 33 OI IP3 dBm 45 Po out @ 2.5% % EVM dBm 26.0 mA 1050 Th hermal Res sistance (D Driver Stage e) °C /W W 20 Th hermal Res sistance (O Output Stag ge) °C /W W 16 Pa arameter Ga ain Flatness (Typ / Max) M Op perating Cu urrent Range MicroW Wave Technolog gy, Inc. an IXYS Company, 4268 8 Solar Way, Fre emont, CA 94538 8 510-651 1-6700 FAX 510 0-952-4000 WEBB www.mwtinc.co om Data a contained herein is subject to ch hange without no otice. All rights rreserved © 2012 Please e visit MwT website www.mwtinc.com for informattion on other Mw wT MMIC productts. Page 1 of o 8, December 2 2012 MMA-44 45933H-02 4..4 – 5.9 GHzz 2W High E Efficiency Lin near Power A Amplifier Decemb ber 2012 Ty ypical RF R Performance: Vdd1=7.5V V,Vdd2=7.5V, V,Vgs1=-0.8, V Vgs2=-0.8V, Idq1=410mA A, Idq q2=620mA, Z0=50 Z ohm, Ta=25 T ºC MMA445933H H-02 Gain Re esponse MMA44 459H02 Return Loss Re esponse 0 36 -5 Return Loss (dB) 37 Gain (db) 35 34 33 32 31 -1 10 -1 15 -2 20 -2 25 -3 30 30 29 4.0 4.2 4.4 4.6 4.8 8 5.0 5.2 5.4 5.6 5.8 6.0 6 Freq quency (GHz) -3 35 4.0 4.2 4.4 4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 Frequen ncy (GHz) P1dB vs Freq quency MMA445933H02 Vdd=7.5, V Vgg=-08, Idd1=4 416mA, Idd2=619mA 35.0 5 50 34.5 4 49 OIP3 and Idd vs v Freqency Vdd1=Vdd2=7.5V, Vgg1=Vgg2=-0.8 4 48 34.0 1100 1060 O IP3 (dBm) 33.5 33.0 32.5 4 46 1020 4 45 4 44 980 4 43 32.0 4 42 940 31.5 4 41 4.65 4.90 5.15 Fre equency (GHz) 5.40 5.65 5.90 4 40 900 5.90 5.85 5.80 5.75 5 70 5.70 5.65 5.60 5.55 5.50 5.45 5.40 5.35 5.30 5 25 5.25 5.20 5.15 5.10 5.05 5.00 4.95 4.90 4.85 4.80 4 80 4.75 4.70 4.65 4.60 4.55 4.50 4.45 4.40 31.0 4.40 Frequency (GH Hz) MicroW Wave Technolog gy, Inc. an IXYS Company, 4268 8 Solar Way, Fre emont, CA 94538 8 510-651 1-6700 FAX 510 0-952-4000 WEBB www.mwtinc.co om Data a contained herein is subject to ch hange without no otice. All rights rreserved © 2012 Please e visit MwT website www.mwtinc.com for informattion on other Mw wT MMIC productts. Page 2 of o 8, December 2 2012 Idd (mA) P1dB (dBm) 4 47 MMA-44 45933H-02 4..4 – 5.9 GHzz 2W High E Efficiency Lin near Power A Amplifier Decemb ber 2012 E EVM vs Pout over Frequenc cy 9 8 7 EVM M4p4 EVM M5p0 EVM M5p5 EVM M5p9 EVM (%) 6 5 4 3 2 1 0 8 9 10 11 12 13 1 14 15 16 6 17 18 19 9 20 21 22 23 2 24 25 26 6 27 28 Burs st Power (d dBm) M Maximum m Rating gs: (Ta= 25 5 °C)* SY YMBOL PARAMETER P RS Vdd1 Drain-Source Voltage Driver D Stage Vdd2 Drain-Sourrce Voltage Output O Stage Vgs1 Gate-Source Voltage Driver D Stage Vgs2 Gate-Sourrce Voltage Output O Stage Idq1 Drain Current Drive er Stage Idq2 Drain Current C Outpu ut Stage Ig g1 and Ig2 Gate Curren nt Ip Pinch-Off Currrent Pdiss DC Power Dissip pation Pin max RF R Input Pow wer UNITS V V V V mA mA mA mA W dBm A ABSOLUTE M MAXIMUM 10 10 -5 -5 500 0 750 0 10 10 9.0 0 +10 0 Tch Cha annel Temperrature ºC 175 5 Tstg Storage Temperature ºC -55 to 150 *Op peration of this de evice above any one of these parameters may ca ause permanent damage. MicroW Wave Technolog gy, Inc. an IXYS Company, 4268 8 Solar Way, Fre emont, CA 94538 8 510-651 1-6700 FAX 510 0-952-4000 WEBB www.mwtinc.co om Data a contained herein is subject to ch hange without no otice. All rights rreserved © 2012 Please e visit MwT website www.mwtinc.com for informattion on other Mw wT MMIC productts. Page 3 of o 8, December 2 2012 MMA-44 45933H-02 4..4 – 5.9 GHzz 2W High E Efficiency Lin near Power A Amplifier Decemb ber 2012 Ty ypical Scatterin S ng Param meters: Vdd1=Vdd2 2=7.5V, Vgs1= =-0.8, Vgs2= =-0.8V, Idq1=4 416mA, Idq q2=620mA, Z0=50 Z ohm, Ta=25 T ºC S-parameeters Vd dd1-Vdd2= =7.5, Vgg1 1=Vgg2=-0.8, Idd1= =416mA, Id dd2=620m mA f req 4.000 4.100 4.200 4.300 4.400 4.500 4.600 4.700 4.800 4.900 5.000 5.100 5.200 5.300 5.400 5.500 5.600 5.700 5.800 5.900 6.000 G... G... G... G... G... G... G... G... G... G... G... G... G... G... G... G... G... G... G... G... G... magS11 0.645 0.583 0.507 0.405 0.303 0.230 0.174 0.126 0.109 0.127 0.154 0.189 0.253 0.316 0.357 0.399 0.435 0.451 0.458 0.462 0.465 AngS11 32.285 19.241 3.416 -13.491 -28.862 -43.280 -60.629 -77.940 -97.370 -120.196 -141.350 -153.388 -162.215 -175.950 169.576 158.603 147.247 137.700 131.897 128.232 123.778 m magS21 43.519 50.770 56.887 58.229 60.835 58.592 56.340 57.163 54.402 51.026 61.098 49.493 57.434 59.113 50.821 50.854 45.402 38.623 35.013 31.307 28.815 A AngS21 ma agS12 Ang gS12 -99.628 -128.986 -160.542 171.005 137.356 113.084 89.105 60.090 43.453 18.963 -5.354 -24.139 -52.760 -79.554 -99.637 -137.348 -151.993 177.226 157.753 137.326 115.352 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 0.001 2.8 849E-4 0.001 0.001 0.001 0.002 0.002 0.002 0.002 0.002 0.003 97.671 9 10 03.298 10 04.699 9 99.811 9 96.209 9 99.810 9 97.310 8 86.109 9 94.205 12 28.273 11 17.399 15 58.159 -17 71.236 -17 78.476 16 63.283 17 76.446 16 69.971 16 68.668 16 69.718 16 62.603 17 70.218 mag gS22 0.072 0 0 0.029 0 0.039 0 0.085 0 0.141 0 0.175 0 0.221 0 0.265 0 0.291 0 0.326 0 0.386 0 0.423 0 0.443 0 0.463 0 0.437 0 0.366 0 0.294 0 0.224 0 0.152 0 0.084 0 0.051 MicroW Wave Technolog gy, Inc. an IXYS Company, 4268 8 Solar Way, Fre emont, CA 94538 8 510-651 1-6700 FAX 510 0-952-4000 WEBB www.mwtinc.co om Data a contained herein is subject to ch hange without no otice. All rights rreserved © 2012 Please e visit MwT website www.mwtinc.com for informattion on other Mw wT MMIC productts. Page 4 of o 8, December 2 2012 AngS S22 22 2.256 58 8.433 136 6.794 155 5.711 147 7.883 141.579 137 7.483 128 8.530 122 2.688 119 9.347 111.612 101.495 91.180 7.581 77 61.712 48 8.775 37 7.350 29 9.044 25 5.486 29 9.234 72 2.184 MMA-44 45933H-02 4..4 – 5.9 GHzz 2W High E Efficiency Lin near Power A Amplifier Decemb ber 2012 M Mechanic cal Information: This Packa age is RoHS S compliant .15 MAX X. .43 30 GAP. .003 3 TYP. .050 T TYP. 2 PLCS. .250 IN NPUT SIDE DO OT .050 TY YP. 8 PLCS. .2 270 .024 TYP P. 10 PLCS. O OUTPUT PAD INPUT PA AD .040 TYP. 2 PLCS. GROUND PA AD Pack kage Outlin ne Piin Number 1 Dot D Top Leftt 2 3 4 5 Pin Desiignation (Toop View) Signal Name N Pinn Number Vgg1 10 GND D RF In I GND D Vdd d1 9 8 7 6 Signal Nam me Vgg2 GND RF Outt GND Vdd2 All A dimensiions are in inches Pin 1 Vg1 Vg2 Pin 10 Pin 2 GND GND Pin 9 Pin 3 RF In R RF Out Pin 8 Pin 4 GND GND Pin 7 Pin 5 Vdd1 Idd1 I Driver D Stage Idd2 Outp put Stage Vdd2 Pin 6 Figure F 1 Fu unctional D Diagram MicroW Wave Technolog gy, Inc. an IXYS Company, 4268 8 Solar Way, Fre emont, CA 94538 8 510-651 1-6700 FAX 510 0-952-4000 WEBB www.mwtinc.co om Data a contained herein is subject to ch hange without no otice. All rights rreserved © 2012 Please e visit MwT website www.mwtinc.com for informattion on other Mw wT MMIC productts. Page 5 of o 8, December 2 2012 MMA-44 45933H-02 4..4 – 5.9 GHzz 2W High E Efficiency Lin near Power A Amplifier Decemb ber 2012 App plication N Note The evaluation e boa ard, shown in n Figure 1, is ffabricated witth Rogers’s 4003 matterial, 20 mil tthick, 2 oz co opper weight a and includ des four DC in nput connecti ons and two RF lines. The e MMA--445933H-02 2 shown in the e center of bo oard is a 2 wa att high gain and a high linea arity amplifier . The MMA-4 445933H-02 iis a 3 stage amplifier asssembly die atttach to the modified ‘02’ pa ackage which h includes fou ur bias entriess and two RF connections. The bias tees are built--in to the packkage. Small vvalue bypassing capac citors are inclu uded with asssembly. Prop per bypassing g is still requirred on the DC C lines. The a amplifier operrates over a Figurre 1 Evaluation n board tempe erature range e of approxima ately 85°C. The PCB P requires via holes with h a diameter of 20 mils pla aced uniforrmly over the center pad fo or thermal reliief and RF gro ound as shown n in Figure 2. The via hole es can be bacck filled with condu uctive epoxy ffor best therm mal performan nce. The choice of capac citor bypassin ng near the am mplifier should have a short circuit reson nance at the frrequency of o operation. A ssmall capacittor 3.9pf 0603 from AVX ha as a series ressonance at 5..5 GHz and w will make a goo od choice for tthe first bypasss capacitor. Fig gure 2 Hole La ayout e capacitors, 100pf or 1000 0pf and 2.2uF F can be used d to maintain voltage stability under Followed up with larger value ak current conditions. The e DC ground via v holes should be laid ou ut to minimize ed inductive re eturns associated with pea gro ound loops. Use U of stitch ground g via ho oles can help control the re eturn current a and also main ntain ground con ntinuity betwe een the top an nd bottom gro ound layers. Two T mounting g holes are u used near the PA assemblyy to seccure the boarrd to the chassis; this also minimizes gro ound current loops and im mproves therm mal conductivity in the abssence of sweat soldering the board to th he chassis. The T internal b bias tees insid de the PA are e quarter-wave e stubs at tthe gate and drain inputs. A 56 ohm re esistor is inse erted in seriess to the gate in ncreasing the e effective imp pedance see en from the Vgs V power sup pply and redu ucing the risk of video oscilllations. DC b blocks are inccluded with asssembly; two o zero ohm re esistors are us sed at the inp put and output 50 ohms tra aces. The MM MA-445933H-02 has a noisse figure MicroW Wave Technolog gy, Inc. an IXYS Company, 4268 8 Solar Way, Fre emont, CA 94538 8 510-651 1-6700 FAX 510 0-952-4000 WEBB www.mwtinc.co om Data a contained herein is subject to ch hange without no otice. All rights rreserved © 2012 Please e visit MwT website www.mwtinc.com for informattion on other Mw wT MMIC productts. Page 6 of o 8, December 2 2012 MMA-44 45933H-02 4..4 – 5.9 GHzz 2W High E Efficiency Lin near Power A Amplifier Decemb ber 2012 lesss than 9.0 dB B. A plot of no oise figure ve ersus frequenc cy at Idq is sh hown in Figurre 3. The amplifier behave es like a cla ass ‘A’ amplifie er. At small signal s levels the amplifier operates o at Id dq. A plot of P1dB versus frequency sh hown in Fig gure 4 is plotte ed from 4.4 to o 5.9 GHz. Th he drain curre ent Idd1 and I dd2 increase es over a rang ge of 1050 mA A to 1100 mA A from Idq = 1020 1 mA. This bias condition for this am mplifier is classs A. The ga in versus tem mperature hass a neg gative slope of o -0.07 dB/℃ ℃. Other class s operations can c be set byy adjusting the e gate controll voltage(s). S Such ope erations as cllass B is doab ble by backing g off the PA stage s controlle ed by Vgg2 ccontrol voltage e. The maxim mum inp put drive level is 17 dBm. e two tone lin The nearity shown in Figure 4 is s swept acros ss a power ra nge from 15 tto 25 dBm pe er tone at the output of the e amplifier from 4.4 to 4.9 GHz. G At 22 dBm per tone the IMD3 is 5 50 dBc and O OIP3 is 47 dBm m. The Burstt power sho own in Figure e 5 is measure ed across the e frequency ra ange from 4.4 4 to 4.9 GHz a at error vector magnitudess equal to 2% % and 2.5%. The T modulatio on is 802.16x x and each fra ame cycle hass a 10 msec d duration and runs continuo ously. Equalization is enabled e when n measuring EVM E performa ance. The M MMA amplifier bias conditio on is Vdd1=Vdd2=7.5 5V and the ga ate voltage is Vgg1=Vgg2= =-0.8V for an Idq=1020 mA A. The e gain stabilitty over tempe erature is show wn in Figure 6 and 7. The e temperature e range was ta aken at 10 C to 85 C deg g and varies 3 dB at a fix frequency. f The e EVM versus s burst powerr, shown in Fiigures 8 and 9 is better tha an 25.5 dBm for an EVM = =2% over tem mperature and d is plotted att two spot freq quencies poin nts 4.4 GHz and a 4.9 GHz ffrom 10C to 8 85C degrees. P1dB_70C P1dB_25C P1dB N10C P1dB_N10C Noise Figure (dB) NF vs Frequency 9 8.5 8 7.5 4.4 4.5 4.6 6 4.7 Freq quency (GHz) Figure F 2 Noise Figurre 4.8 4.9 9 P1 1dB vs Temperrature and Freq quency 5.9 5.8 5.7 5.6 5.5 5.4 5.3 5.2 51 5.1 5.0 4.9 4.8 4.7 4.6 4 6 4.5 4.4 7 35.0 34.5 34.0 33.5 33.0 32.5 32.0 Freque ency (GHz) Figurre 3 P1dB a and Ids MicroW Wave Technolog gy, Inc. an IXYS Company, 4268 8 Solar Way, Fre emont, CA 94538 8 510-651 1-6700 FAX 510 0-952-4000 WEBB www.mwtinc.co om Data a contained herein is subject to ch hange without no otice. All rights rreserved © 2012 Please e visit MwT website www.mwtinc.com for informattion on other Mw wT MMIC productts. Page 7 of o 8, December 2 2012 MMA-44 45933H-02 4..4 – 5.9 GHzz 2W High E Efficiency Lin near Power A Amplifier Decemb ber 2012 B Burst Power vs Frequency 70 65 60 55 50 45 40 Burst Power (dBm) 15 17 16 18 19 9 20 21 22 2 23 24 27.5 27 26.5 26 25.5 25 24.5 25 2 4.5 4.4 4.6 Powe er Per Tone (dBm) IMD3_4.4 GHz IM MD3_4.7GHz IM MD3_4.9GHz BP_2% Gain versus Frequency and Tem mperature G ain_7 0C G ain_5 0C G ain_2 5C G ain _N1 0C 37 36 35 34 33 4.0 4 4.2 4.4 4.6 4 4.8 5.0 5.2 freq, GHz 4.9 BP_2.5% 5 5.4 5.6 5.8 6 6.0 Gain-Temperature Coefficient (70C to 25C and 25C to -10C) vs Frequee 00.04 0 0.03 0 0.02 0 0.01 0 0.00 -00.01 -00.02 -00.03 -00.04 4.0 Fig gure 6 Gain vs Tempera ature 4.2 4.44 4.6 4.8 5.0 5.2 freqq, GHz 5.4 5.6 5.8 EVM and Idss vs Burst Poweer over Temperrature 6 0.925 5 0.9 5 0.9 4 0.875 4 0.875 3 0.85 3 0.85 2 0.825 2 0.825 1 0.8 1 0.8 0 0.775 12 14 16 18 20 22 24 26 28 Burst Poower (dBm) Fig gure 8 EVM vs Burst Power and Temperature T e EVM (%) 0.925 Ids (A) 6 10 6.00 Figure 7 G Gain-Tempe erature Coe efficient EVM an nd Ids vs Burstt Power over Temperature T EVM (%) 4.8 Figure 5 Bu urst Power T em perature_Co eff_Below_25C T em perature_Co eff_Above_25C Figure 4 Two Tone e 38 4.7 uency (GHz) Frequ 0 Ids (A) IMD3 (dBc) Tw wo Tone IMD D3 vs Tone Power 0.775 10 12 14 16 18 20 22 24 26 28 Burst Power (dBm) Figu ure 9 EVM vs s Burst Pow wer and Tem mperature MicroW Wave Technolog gy, Inc. an IXYS Company, 4268 8 Solar Way, Fre emont, CA 94538 8 510-651 1-6700 FAX 510 0-952-4000 WEBB www.mwtinc.co om Data a contained herein is subject to ch hange without no otice. All rights rreserved © 2012 Please e visit MwT website www.mwtinc.com for informattion on other Mw wT MMIC productts. Page 8 of o 8, December 2 2012