Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0504 Features • Cascadable 50 Ω Gain Block • High Output Power: 18.0 dBm Typical P1 dB at 1.0␣ GHz • Low Distortion: 29.0 dBm Typical IP3 at 1.0␣ GHz • 7.0 dB Typical Gain at 1.0␣ GHz • Low Cost Plastic Package Description The MSA-0504 is a high performance medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 12 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9580E OUT MSA Vd = 8.4 V 6-350 04A Plastic Package MSA-0504 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature 135 mA 1.5 W +25 dBm 200°C –65 to 150°C Electrical Specifications[1], TA = 25°C Symbol P1 dB GP Parameters and Test Conditions: Id = 80 mA, ZO = 50 Ω Output Power at 1 dB Gain Compression Power Gain (|S21| 2) ∆GP Gain Flatness f3 dB 3 dB Bandwidth[2] VSWR Thermal Resistance[2,4]: θjc = 75°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 13.3 mW/°C for TC > 88°C. 4. See MEASUREMENTS section “Thermal Resistance” for more information. Units Min. Typ. f = 0.5 GHz f = 1.0 GHz dBm dBm 16.0 19.0 18.0 f = 0.5 GHz f = 1.0 GHz dB 6.0 7.5 7.0 f = 0.1 to 1.5 GHz dB ± 0.75 GHz 2.3 Input VSWR f = 0.1 to 1.5 GHz 1.6:1 Output VSWR f = 0.1 to 1.5 GHz 2.0:1 IP3 Third Order Intercept Point f = 1.0 GHz dBm 29.0 NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5 tD Group Delay f = 1.0 GHz psec Vd Device Voltage dV/dT Device Voltage Temperature Coefficient V mV/°C Max. 180 6.7 8.4 10.1 –16.0 Notes: 1. The recommended operating current range for this device is 60 to 100 mA. Typical performance as a function of current is on the following page. 2. Referenced from 0.1 GHz Gain (GP). 6-351 MSA-0504 Typical Scattering Parameters (TA = 25°C, Id = 80 mA) S11 S21 S12 S22 Freq. MHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 5 25 50 100 200 400 600 800 1000 1500 2000 2500 3000 .54 .24 .18 .14 .14 .14 .14 .15 .17 .23 .33 .42 .49 –43 –112 –142 –156 –168 –174 –175 –174 –174 –179 171 156 146 14.7 9.3 8.1 7.8 7.6 7.5 7.4 7.2 7.0 6.4 5.5 4.3 3.2 5.43 2.92 2.54 2.45 2.40 2.37 2.34 2.29 2.24 2.09 1.88 1.64 1.44 160 155 161 166 163 150 137 124 111 80 51 27 6 –18.4 –13.8 –13.7 –13.7 –13.7 –13.7 –13.6 –13.5 –13.6 –13.3 –12.8 –13.0 –12.8 .120 .204 .206 .207 .206 .206 .208 .211 .209 .216 .230 .224 .230 37 12 3 3 1 1 –1 –1 –3 –4 –10 –12 –11 .63 .24 .16 .13 .13 .16 .20 .25 .29 .37 .48 .51 .55 –39 –101 –125 –137 –146 –143 –144 –148 –154 –168 178 165 157 0.60 0.99 1.17 1.18 1.20 1.19 1.18 1.15 1.14 1.06 0.91 0.90 0.92 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 10 6:1 120 TC = +85°C TC = +25°C 8 5:1 TC = –25°C 0.1 GHz 0.5 GHz 4:1 Vd (V) 6 VSWR GAIN (dB) 90 3:1 4 60 1.0 GHz 1.5 GHz 2.0 GHz 2 Output 30 2:1 Input 1:1 0 8 10 12 14 16 18 20 22 0.1 24 0.2 0.3 0.5 1.0 2.0 0 4.0 0 3 FREQUENCY (GHz) POWER OUT (dBm) Figure 2. VSWR vs. Frequency, Id = 80 mA. Figure 1. Typical Gain vs. Power Out, TA = 25°C, Id = 80 mA. 9 12 Figure 3. Device Current vs. Voltage. 14 22 6 I d (mA) 34 IP3 (dBm) 12 20 0.5 GHz 1.0 GHz 16 8 6 4 14 2 2.0 GHz 12 –25 0 +25 +85 TEMPERATURE (°C) Figure 4. Output Power at 1 dB Gain Compression, vs. Case Temperature, Id = 80 mA. 30 IP3 26 22 P1 dB (dBm) 18 Gp (dB) P1 dB (dBm) 10 0 .01 .05 0.1 0.5 1.0 FREQUENCY (GHz) Figure 5. Gain vs. Frequency, Id = 80 to 100 mA. 6-352 5.0 P1 dB 18 14 60 70 80 90 100 Id (mA) Figure 6. Output Power at 1 dB Gain Compression, Third Order Intercept vs. Current, f = 1.0 GHz. 04A Plastic Package Dimensions 12.39 ± 0.76 (0.488 ± 0.030) 4 GROUND 0.76 (0.030) DIA. RF INPUT RF OUTPUT & BIAS 51 0.76 (0.030) 1 3 4.29 (0.169) 0.96 (0.038) 2 GROUND 0.51 (0.020) NOTES: (UNLESS OTHERWISE SPECIFIED) 1. DIMENSIONS ARE IN MILLIMETERS (INCHES) 2. TOLERANCES mm .XX = ± 0.13 in .XXX = ± 0.005 0.20 ± 0.050 (0.008 ± 0.002) 2.54 ± 0.25 (0.100 ± 0.010) 3.68 (0.145) DIMENSIONS ARE IN MILLIMETERS (INCHES). 6-353