PRELIMINARY DATA SHEET 2.7 GHz SILICON MIMIC WIDE BAND AMPLIFIER UPC2776T FEATURES GAIN vs. FREQUENCY WIDE FREQUENCY RESPONSE: 2.7 GHz • FLAT GAIN RESPONSE: ±1.0 dB • HIGH GAIN: 23 dB • MEDIUM OUTPUT POWER: P1dB: 6.0 dBm @ 1.0 GHz • 5 V SINGLE SUPPLY VOLTAGE • SMALL SURFACE MOUNT PACKAGE : T06 • TAPE AND REEL PACKAGING AVAILABLE 30 25 Gain, GS (dB) • 20 15 DESCRIPTION AND APPLICATIONS 10 0 0.5 1.0 The UPC2776T is a Silicon Monolithic integrated circuit manufactured using the NESAT III process. This device is suitable for wide band IF blocks due to its high gain and flat response. The UPC2776T is designed as a low cost IC gain stage in DBS, TVRO, PCS, WLAN and other communication receivers. 1.5 2.0 2.5 3.0 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (VCC = 5.0 V, TA = 25 °C, ZIN = ZOUT = 50 Ω) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS UPC2776T TO6 UNITS MIN TYP MAX ICC Circuit Current (no signal) mA 18 25 33 Gs Small Signal Gain, f = 1 GHz dB 21 23 26 fU Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 0.1 GHz) GHz 2.3 2.7 ∆GS Gain Flatness, f = 0.1 ~ 2.0 GHz P1dB Output Power at 1 dB Compression f = 1 GHz NF Noise Figure, f = 1 GHz ±1.0 dB dBm +4 dB +6.0 6.0 RLIN Input Return Loss, f = 1 GHz dB 4.5 7.5 RLOUT Output return Loss, f = 1 GHz dB 15 20 ISOL Isolation, f = 1 GHz dB 27 PSAT Saturated Output Power, f = 1 GHz dBm 8.5 IM3 3rd Order Intermodulation Distortion, f = 1 GHz PO = 0 dBm each tone, f1 = 1000 MHz, f2 = 1002 MHz dBc -30 RTH Thermal Resistance (Junction to Ambient) °C/W 7.5 32 200 California Eastern Laboratories UPC2776T ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS VCC Supply Voltage ICC UNITS RATINGS RECOMMENDED OPERATING CONDITIONS V 6 SYMBOL PARAMETER UNITS MIN TYP MAX Total Circuit Current mA 60 VCC Supply Voltage V 4.5 5.0 PIN Input Power dBm +10 PT Power Dissipation2 mW 280 TOP Operating Temperature °C -40 to +85 TSTG Storage Temperature °C -55 to +150 5.5 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85 °C) PIN FUNCTIONS PIN SYMBOL APPLIED VOLTAGE (v) 1 INPUT — 2 3 5 GND DESCRIPTION EQUIVALENT CIRCUIT RF signal input pin. An internal matching circuit, configured with resistors, improves match to 50 Ω over a wide band. A multi-feedback circuit is incorporated to minimize variations in hFE and resistance values. 0 6 4 Ground pin. Form the ground pattern as large as possible to minimize ground impedance. 1 4 OUTPUT 6 VCC 4.5 - 5.5 RF signal output pin. Connect an inductor between this pin and VCC to supply current to the internal output transistors. Power supply pin. This pin biases the internal input transistor. TEST CIRCUIT VCC 1000 pF 300 nH 6 50 Ω IN C1 1 4 1000 pF L C2 1000 pF 2, 3, 5 50 Ω OUT 2 3 5 UPC2776T LEAD CONNECTIONS OUTLINE DIMENSIONS (Units in mm) (Top View) UPC2776T PACKAGE OUTLINE T06 +0.2 2.8 -0.3 +0.2 1.5 -0.1 2 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 +0.2 1.1 -0.1 C2L 3 1 -0.05 0.3 +0.10 1. INPUT 2. GND 3. GND (Bottom View) 4 4 3 5 5 2 6 6 1 Note: Package Markings C2L: UPC2776T 4. OUTPUT 5. GND 6. VCC 0.13±0.1 0.8 0 to 0.1 Note: All dimensions are typical unless otherwise specified. RECOMMENDED P.C.B. LAYOUT (Units in mm) ORDERING INFORMATION PART NUMBER QTY UPC2776T-E3 3K/Reel 3.10 3 4 2 5 1 6 0.5 MIN 1.0 MIN EXCLUSIVE NORTH AMERICAN AGENT FOR 0.95 1.0 MIN RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER - 1/96 DATA SUBJECT TO CHANGE WITHOUT NOTICE