RFMD LQG11A47NJ00

RFHA1006
RFHA1006
225MHz to
1215MHz, 9W
GaN Wideband Power
Amplifier
225MHz TO 1215MHz, 9W GaN WIDEBAND
POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
VGS
Pin 1
Features

Advanced GaN HEMT Technology

Output Power of 9W

Advanced Heat-Sink Technology



225MHz to 1215MHz
Instantaneous Bandwidth
RF IN
Pin 2,3
RF OUT / VDS
Pin 6,7
Input Internally Matched to 50
GND
BASE
28V Operation Typical
Performance
Output Power 39.5dBm
Gain 16dB
 Power Added Efficiency 60%
-40°C to 85°C Operating
Temperature




Large Signal Models Available
Applications


Class AB Operation for Public
Mobile Radio
Power Amplifier Stage for
Commercial Wireless
Infrastructure

General Purpose Tx Amplification

Test Instrumentation

Civilian and Military Radar
Functional Block Diagram
Product Description
The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose
amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat
gain, and large instantaneous bandwidth in a single amplifier design. The
RFHA1006 is an input matched GaN transistor packaged in an air cavity ceramic
package which provides excellent thermal stability through the use of advanced
heat sink and power dissipation technologies. Ease of integration is accomplished
through the incorporation of optimized input matching network within the package
that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for
any sub-band within the overall bandwidth.
Ordering Information
RFHA1006S2
RFHA1006SB
RFHA1006SQ
RFHA1006SR
RFHA1006TR7
RFHA1006PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
100 Pieces on 7” short reel
750 Pieces on 7” reel
Fully assembled evaluation board 225MHz to 1215MHz;
28V operation
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120418
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
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RFHA1006
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to +2
V
Gate Current (IG)
10
mA
Operational Voltage
32
V
30
dBm
RF- Input Power
Ruggedness (VSWR)
12:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TL)
-40 to +85
°C
200
°C
Operating Junction Temperature (TJ)
Human Body Model
Class 1A
MTTF (TJ < 200°C, 95% Confidence Limits)*
3 x 106
Hours
6
°C/W
Thermal Resistance, RTH (junction to case)
measured at TC = 85°C, DC bias only
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE
Specification
Typ.
Max.
28
32
V
-3
-2
V
RF Input Power (PIN)
28
dBm
Input Source VSWR
10:1
Parameter
Min.
Unit
Condition
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
-5
Drain Bias Current
88
mA
RF Performance
Characteristics
Frequency Range
225
1215
MHz
Small signal 3dB bandwidth
Linear Gain
16
dB
POUT = 30dBm
Power Gain
14
dB
POUT = 39.5dBm
3
dB
POUT = 30dBm, 225MHz to 1215MHz
-0.02
dB/°C
Gain Flatness
Gain Variation with Temperature
Input Return Loss (S11)
Output Power
Power Added Efficiency (PAE)
2 of 11
-11
dB
39.5
dBm
225MHz to 1215MHz
60
%
225MHz to 1215MHz
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120418
RFHA1006
Parameter
Min.
Specification
Typ.
Max.
Unit
RF Functional Tests
[1], [2]
VGS(Q)
Gain
Power Gain
14.8
-3.2
V
16.6
dB
PIN = 10dBm, 300MHz
15.4
dB
PIN = 24dBm, 300MHz
Input Return Loss
-10
Output Power
Power Added Efficiency (PAE)
39.4
55
Gain
Power Gain
14
%
15
dB
PIN = 10dBm, 1100MHz
14.5
dB
PIN = 25dBm, 1100MHz
-9
Output Power
48
dB
dBm
62.5
Input Return Loss
Power Added Efficiency (PAE)
Condition
dB
39.5
dBm
53
%
[1] Test Conditions: VDSQ = 28V, IDQ = 88mA, CW, T = 25ºC.
[2] Performance in a standard tuned test fixture.
DS120418
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
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RFHA1006
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 225MHz
to 1215MHz (T = 25°C, unless noted)
Gain versus Frequency, Pin = 25dBm
Small Signal s-parameters versus Frequency
(CW , VD = 28V, IDQ = 88mA)
0
17
15
-3
16
12
-6
9
-9
6
-12
S21
S11
S22
Gain (dB)
15
1250
1200
1150
14
13
12
-15
1100
950
900
850
800
750
700
650
600
550
500
450
400
350
300
250
200
0
1000
3
Magnitude, S11, S22 (dB)
18
1050
Magnitude, S21 (dB)
(VD = 28V, IDQ = 88mA)
85°C
25°C
-40°C
11
10
-18
200
400
600
Frequency (MHz)
800
1000
Frequency (MHz)
1400
Input Return Loss versus Frequency, Pin = 25dBm
PAE versus Frequency, Pin = 25dBm
(CW, VD = 28V, IDQ = 88mA)
(CW, VD = 28V, IDQ = 88mA)
-6
70
65
85°C
25°C
-40°C
-8
60
IRL, Input Return Loss (dB)
Power Added Efficiency, PAE (%)
1200
55
50
45
40
35
85°C
25°C
-40°C
30
-10
-12
-14
25
-16
20
1200
200
1400
400
600
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
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-18
40
35
30
Frequency (MHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
1300
-15
1200
Gain
IRL
45
1100
-12
1000
6
50
500
-9
55
400
9
60
300
-6
200
12
65
100
-3
Power Added Efficiency, PAE (%)
15
70
Input Return Loss (dB)
Gain (dB)
0
Frequency (MHz)
1400
(CW, VD = 28V, IDQ = 88mA)
(CW, VD = 28V, IDQ = 88mA)
0
1200
PAE versus Frequency, POUT = 39.5dBm
Gain/IRL versus Frequency, POUT = 39.5dBm
18
3
800
1000
Frequency (MHz)
900
800
1000
Frequency (MHz)
800
600
700
400
600
200
DS120418
RFHA1006
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 225MHz
to 1215MHz (T = 25°C, unless noted)
Gain versus Frequency
Power Added Efficiency versus Frequency
(CW, VD = 28V, IDQ = 88mA)
(CW, VD = 28V, IDQ = 88mA)
80
20
=40dBm
PPout
OUT
=39.5dBm
PPout
OUT
=30dBm
PPout
OUT
70
Power Added Efficiency, PAE (%)
16
8
=40dBm
PPout
OUT
PPout
OUT =39.5dBm
PPout
OUT =30dBm
4
40
30
20
10
1300
1200
1100
1000
900
800
700
(CW, VD = 28V, IDQ = 88mA)
19
0
18
PPout
OUT =40dBm
PPout
OUT =39.5dBm
PPout
OUT =30dBm
-3
17
16
-6
Gain (dB)
Input Return Loss, IRL (dB)
600
Gain versus Output Power
(CW, VD = 28V, IDQ = 88mA)
-9
-12
15
14
13
freq=300MHz
freq=800MHz
freq=1100MHz
12
-15
10
1300
1200
1100
1000
Frequency (MHz)
900
800
700
600
500
400
300
200
100
11
22
Power Added Efficiency versus Output Power
25
28
31
34
POUT, Output Power (dBm)
37
40
Input Return Loss versus Output Power
(CW, VD = 28V, IDQ = 88mA)
(CW, VD = 28V, IDQ = 88mA)
0
70
freq=300MHz
freq=800MHz
freq=1100MHz
freq=300MHz
freq=800MHz
freq=1100MHz
-3
Input Return Loss, IRL (dB)
60
Power Added Efficiency, PAE (%)
500
Frequency (MHz)
Input Return Loss versus Frequency
-18
400
300
100
1300
1200
1100
Frequency (MHz)
1000
900
800
700
600
500
400
300
200
0
100
0
50
200
Gain (dB)
12
60
50
40
30
20
-6
-9
-12
-15
10
0
-18
22
DS120418
25
28
31
34
POUT, Output Power (dBm)
37
40
22
25
28
31
34
POUT, Output Power (dBm)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
37
40
5 of 11
RFHA1006
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 225MHz
to 1215MHz (T = 25°C, unless noted)
IMD3 versus Output Power
(2-Tone 1MHz Separaon, VD = 28V, IDQ varied, fc = 1100MHz)
IMD3, Intermodulaon Distoron (dBc)
-10
-15
-20
-25
-30
-35
44mA
88mA
132mA
176mA
220mA
-40
-45
-50
-55
1
10
100
Pout, Output Power (W-PEP)
Gain versus Output Power
(2-Tone 1MHz Separaon, VD = 28V, IDQ varied, fc = 1100MHz)
17.5
17
16.5
Gain (dB)
16
15.5
15
44mA
88mA
132mA
176mA
220mA
14.5
14
13.5
13
1
10
100
Pout, Output Power (W-PEP)
6 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120418
RFHA1006
Package Drawing
(All dimensions in mm.)
Pin Names and Descriptions
Pin
1
2
3
4
5
6
7
8
Backside
DS120418
Name
Description
Gate DC Bias pin
VGS
RF Input
RF IN
RF Input
RF IN
No Connect
N/C
No Connect
N/C
RF OUT/VDS RF Output/Drain DC Bias pin
RF OUT/VDS RF Output/Drain DC Bias pin
No Connect
N/C
Ground
GND
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support, contact RFMD at (+1) 336-678-5570 or [email protected]
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RFHA1006
Bias Instruction for RFHA1006 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board
requires additional external fan cooling. Connect all supplies before powering evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -5V to VG.
4. Apply 28V to VD.
5. Increase VG until drain current reaches 88mA or desired bias point.
6. Turn on the RF input.
Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias
network mismatch and losses.
8 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120418
RFHA1006
Evaluation Board Schematic
Evaluation Board Bill of Materials (BOM)
Component
Value
Manufacturer
Part Number
C1, C2
C11
C15
C20
C25
R11
L20
L21
C21, R21
2400pF
10000pF
10F
3.3pF
4.7F
47nH
3.85nH
82nH
NOT USED
Dielectric Labs Inc
Murata Electronics
Murata Electronics
ATC
Murata Electronics
Murata Electronics
Coilcraft
Coilcraft
-
C08BL242X-5UN-X0
GRM188R71H103KA01D
GRM21BF51C106ZE15L
100A3R3BW150XC
GRM55ER72A475KA01L
LQG11A47NJ00
0906-4KLB
1008HQ-82NXGLC
-
DS120418
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
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RFHA1006
Evaluation Board Layout
Device Impedances
Frequency (MHz)
RFHA1006PCBA-410 (225MHz to 1215MHz)
Z Source ()
Z Load ()
225MHz
40.4 + j3.4
40.6 + j14.1
300MHz
41.5 + j4.6
42.8 + j9.3
400MHz
42.8 + j5.5
42.7 + j5.8
950MHz
50.8 + j1.4
24.5 + j11.9
1100MHz
50.1 - j1.4
21.1 + j21.0
1215MHz
49 - j 2.8
19.8 + j27.6
Note: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power
performance across the entire frequency bandwidth.
10 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
DS120418
RFHA1006
Device Handling/Environmental Conditions
RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity,
high temperature environment.
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation
boards.
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is
saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than
the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be
adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current
(IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this
device based on performance tradeoffs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is
measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time,
the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat
sink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of
the measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heat sinking systems and air flow mechanisms. Incorporating the dissipated DC
power, it is possible to calculate the junction temperature of the device.
DS120418
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected]
11 of 11