RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 30MHz to 512MHz Instantaneous Bandwidth RF IN Pin 2,3 RF OUT / VDS Pin 6,7 Input Internally Matched to 50 GND BASE 28V Operation Typical Performance Output Power 39.5dBm Gain 19dB Power Added Efficiency 70% -40°C to 85°C Operating Temperature Large Signal Models Available Applications Pre-Driver for Multiband Wireless Infrastructure Transmitters Class AB Operation for Public Mobile Radio Power Amplifier Stage for Commercial Wireless Infrastructure General Purpose Tx Amplification Test Instrumentation Civilian and Military Radar Functional Block Diagram Product Description The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. The RFHA1003 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. Ordering Information RFHA1003S2 RFHA1003SB RFHA1003SQ RFHA1003SR RFHA1003TR7 RFHA1003PCBA-410 2-Piece sample bag 5-Piece bag 25-Piece bag 100 Pieces on 7” short reel 750 Pieces on 7” reel Fully assembled evaluation board 30MHz to 512MHz; 28V operation Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT BiFET HBT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc. DS120216 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 1 of 11 RFHA1003 Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (VD) 150 V Gate Voltage (VG) -8 to +2 V Gate Current (IG) 5 mA Operational Voltage 32 V 27 dBm RF- Input Power Ruggedness (VSWR) 12:1 Storage Temperature Range -55 to +125 °C Operating Temperature Range (TL) -40 to +85 °C 200 °C Operating Junction Temperature (TJ) Human Body Model Class 1C MTTF (TJ < 200°C, 95% Confidence Limits)* 3 x 106 Hours 9.8 °C/W Thermal Resistance, RTH (junction to case) measured at TC = 85°C, DC bias only Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RoHS (Restriction of Hazardous Substances): Compliant per EU Directive 2002/95/EC. * MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability. Refer to product qualification report for FIT(random) failure rate. Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page two. Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE Specification Min. Typ. Max. Unit 28 32 V -3 -2 V RF Input Power (PIN) 25 dBm Input Source VSWR 10:1 Parameter Condition Recommended Operating Conditions Drain Voltage (VDSQ) Gate Voltage (VGSQ) -5 Drain Bias Current 55 mA RF Performance Characteristics Frequency Range 30 512 MHz Small signal 3dB bandwidth Linear Gain 19 dB POUT = 30dBm, 100MHz Power Gain 16 dB P3DB, 100MHz 2 dB POUT = 30dBm, 30MHz to 2500MHz -0.02 dB/°C Gain Flatness Gain Variation with Temperature Input Return Loss (S11) Output Power (P3dB) Power Added Efficiency (PAE) 2 of 11 -10 dB 39.5 dBm 30MHz to 512MHz 70 % 30MHz to 512MHz 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120216 RFHA1003 Parameter Specification Min. Typ. Max. Unit -3.0 V RF Functional Tests [1], [2] VGS(Q) Gain Condition 18 18.5 dB PIN = 10dBm 14.3 15.5 dB PIN = 25dBm Output Power 39 39.5 dBm Power Added Efficiency (PAE) 60 70 % Power Gain Input Return Loss -10 dB [1] Test Conditions: VDSQ = 28V, IDQ = 55mA, CW, f = 300MHz, T = 25ºC. [2] Performance in a standard tuned test fixture. DS120216 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 3 of 11 RFHA1003 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to 512MHz (T = 25°C, unless noted) GainversusFrequency,PIN =25dBm SmallSignalsparametersversusFrequency (CW,VD =28V,IDQ =55mA) 20 16 5 16 12 10 8 15 Frequency(MHz) 8 0 80 5 40 85C 85qC 25C 25qC 40 qC 40C 400 500 30 450 40 400 500 450 400 25 350 0 300 20 250 4 50 350 IRL 300 Gain 60 250 15 200 8 70 150 10 100 12 80 50 5 0 16 90 PowerAddedEfficiency,PAE(%) 0 InputReturnLoss(dB) 20 200 350 (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) 150 300 PAEversusFrequency,POUT =39.5dBm Gain/IRLversusFrequency,POUT =39.5dBm 100 250 Frequency(MHz) Frequency(MHz) 50 200 150 50 0 500 450 400 350 300 250 200 150 100 50 0 500 85C 85qC 25C 25qC 40C 40qC 20 25 0 450 15 100 20 10 500 60 450 InputReturnLoss,IRL(dB) PowerAddedEfficiency,PAE(%) 400 (CW,VD =28V,IDQ =55mA) 100 0 Gain(dB) 350 InputReturnLossversusFrequency,PIN =25dBm (CW,VD =28V,IDQ =55mA) 4 of 11 300 Frequency(MHz) PAEversusFrequency,PIN =25dBm Frequency(MHz) 250 0 200 25 85C 85qC 25C qC 25 40C 40 qC 150 4 100 20 50 900 800 700 600 500 400 300 200 100 0 0 S21 S11 S22 12 0 4 Gain(dB) 0 Magnitude,S11,S22 (dB) 20 1000 Magnitude,S21 (dB) (VD =28V,IDQ =55mA) Frequency(MHz) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120216 RFHA1003 Typical Performance in standard fixed tuned test fixture matched for 30MHz to 512MHz (T = 25°C, unless noted) GainversusFrequency PowerAddedEfficiencyversusFrequency (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) 100 24 20 PowerAddedEfficiency,PAE(%) 80 16 12 8 PPout=39.5dBm OUT PPout=35dBm OUT PPout=25dBm OUT 4 60 40 20 Frequency(MHz) 500 450 400 350 300 GainversusOutputPower (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) 22 0 P Pout=39.5dBm OUT P Pout=35dBm OUT P Pout=25dBm OUT 5 20 Gain(dB) 10 15 18 16 500 450 400 350 300 250 200 12 150 25 100 14 50 20 0 InputReturnLoss,IRL(dB) 250 Frequency(MHz) InputReturnLossversusFrequency freq=30MHz freq=300MHz freq=500MHz 20 25 Frequency(MHz) 30 POUT,OutputPower(dBm) 35 40 InputReturnLossversusOutputPower PowerAddedEfficiencyversusOutputPower (CW,VD =28V,IDQ =55mA) (CW,VD =28V,IDQ =55mA) 0 100 freq=30MHz freq=300MHz freq=500MHz 80 freq=30MHz freq=300MHz freq=500MHz 5 InputReturnLoss,IRL(dB) PowerAddedEfficiency,PAE(%) 200 150 0 500 450 400 350 300 250 200 150 100 50 0 100 0 0 50 Gain(dB) POUT Pout=39.5dBm Pout=35dBm POUT Pout=25dBm POUT 60 40 10 15 20 20 25 0 20 DS120216 25 30 POUT,OutputPower(dBm) 35 40 20 25 30 POUT,OutputPower(dBm) 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 35 40 5 of 11 RFHA1003 Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to 512MHz (T = 25°C, unless noted) IMDversusOutputPower GainversusOutputPower (VD =28V,IDQ =85mA,f1=449.5MHz,f2=450.5MHz) (2Tone1MHzSeparation,VD =28V,IDQ varied,fc=450MHz) 19 10 IMD3 IMD3 IMD5 IMD5 IMD7 IMD7 18 17 20 16 Gain(dB) IntermodulationDistortion(IMD dBc) 0 30 40 14 13 25mA 55mA 85mA 115mA 145mA 12 50 11 60 10 9 70 0.1 1 10 POUT,OutputPower(W PEP) 15 100 20 25 30 POUT,OutputPower(dBm) 35 40 DrainEfficiencyversusOutputPower IMD3versusOutputPower (2Tone1MHzSeparation,VD=28V,IDQ varied,fc=450MHz) (2Tone1MHzSeparation,VD =28V,IDQ varied,fc=450MHz) 10 70 50 40 IMD3,IntermodulationDistortion(dBc) 25mA 55mA 85mA 115mA 145mA 60 DrainEfficiency(%) 15 30 20 10 0 15 20 25 25mA 55mA 85mA 115mA 145mA 30 35 40 15 20 25 30 POUT,OutputPower(dBm) 35 40 0.1 1 10 100 POUT,OutputPower(WPEP) PowerDissipationDeratingCurve (BasedonMaximumpackagetemperatureandRTH) 25 PowerDissipation(W) 20 15 10 5 0 0 6 of 11 10 20 30 40 50 60 70 MaximumCaseTemperature(°C) 80 90 100 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120216 RFHA1003 Package Drawing (All dimensions in mm.) A123 : Trace Code 1234 : Serial Number Package Style: Ceramic SO8 Pin Names and Descriptions Pin 1 2 3 4 5 6 7 8 Pkg Base DS120216 Name Description Gate DC Bias pin VGS RF Input RF IN RF Input RF IN No Connect N/C No Connect N/C RF OUT/VDS RF Output / Drain DC Bias pin RF OUT/VDS RF Output / Drain DC Bias pin No Connect N/C Ground GND 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 7 of 11 RFHA1003 Bias Instruction for RFHA1003 Evaluation Board ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board requires additional external fan cooling. Connect all supplies before powering evaluation board. 1. Connect RF cables at RFIN and RFOUT. 2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this ground terminal. 3. Apply -5V to VG. 4. Apply 28V to VD. 5. Increase VG until drain current reaches 55mA or desired bias point. 6. Turn on the RF input. Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias network mismatch and losses. 8 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120216 RFHA1003 Evaluation Board Schematic VG VD C15 C25 C11 C21 R21 1 2 C1 3 RF IN 50Ω Microstrip 4 VG RFIN GND 9 R11 N/C RFOUT RFIN RFOUT N/C N/C U1 L21 8 7 L20 C2 6 5 C20 50Ω Microstrip RF OUT RFHA1003 Evaluation Board Bill of Materials (BOM) Component Value Manufacturer Part Number C1, C2 C11 C15 C20 C25 R11 L20 L21 C21, R21 2400pF 10000pF 10F 0.8pF 4.7F 0 5.4nH 0.9H NOT USED Dielectric Labs Inc Murata Electronics Murata Electronics ATC Murata Electronics Panasonic Coilcraft Coilcraft - C08BL242X-5UN-X0 GRM188R71H103KA01D GRM21BF51C106ZE15L 100A0R8BW150XT GRM55ER72A475KA01L ERJ-3GEY0R00V 0906-5_LB 1008AF-901XJLC - DS120216 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 9 of 11 RFHA1003 Evaluation Board Layout P1 P2 P3 Device Impedances Frequency (MHz) RFHA1003PCBA-410 (30MHz to 512MHz) Z Source () Z Load () 30 49.84-j1.61 45.86+j11.88 100 50.00-j1.36 49.11+j1.28 150 49.77-j1.68 48.20-j1.43 200 49.58-j2.22 46.77-j3.34 250 49.41-j2.71 44.97-j4.64 300 49.17-j3.06 42.97-j5.24 350 48.77-j3.50 40.74-5.48 400 48.44-j3.95 38.41-j5.24 450 48.07-j4.21 36.28-j4.57 512 47.45-j4.64 33.49-j3.34 NOTE: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power performance across the entire frequency bandwidth. 10 of 11 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. DS120216 RFHA1003 Device Handling/Environmental Conditions RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation boards. DC Bias The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS. RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device based on performance tradeoffs. Mounting and Thermal Considerations The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heat sinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device DS120216 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or [email protected]. 11 of 11