SSM9973A 5 A, 60V N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-223 DESCRIPTION The SSM9973A provide the designer with the best combination of fast switching, ruggedized design, low on-resistance and cost effectiveness. The SOT-223 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. A M 4 CB Top View 1 2 K L 3 E FEATURES D Simply drive requirement Super high density cell design for extremely low RDS(ON) F G REF. A B C D E F Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 H REF. G H J K L M J Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) SYMBOL RATING Drain – Source Voltage PARAMETER VDS 60 V Gate – Source Voltage VGS ±20 V 5.0 A 4.0 A Continuous Drain Current3, VGS@10V Pulsed Drain Current TA = 25°C ID TA = 70°C 1,2 UNIT IDM 10 A Total Power Dissipation, TA = 25°C PD 2.7 W Maximum Junction – Ambient3 RθJA 45 °C/W 0.02 W/°C 150, -55~150 °C Linear Derating Factor Operating Junction & Storage Temperature Range TJ, TSTG ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) SYMBOL MIN TYP MAX UNIT Drain-Source Breakdown Voltage PARAMETER BVDSS 60 - - V VGS=0V, ID =250µA Gate Threshold Voltage VGS(TH) 0.5 - 1.5 V VDS= VGS, ID =250µA Forward Transconductance gFS - 12 - S VDS=15V, ID=4A Gate-Source Leakage Current IGSS - - ±100 nA VGS=±20V - - 1 - - 10 µA V DS=60V, VGS=0V - - 115 - - 125 Drain-Source Current Leakage TA = 25°C TA = 70°C Drain-Source On Resistance IDSS RDS(ON) Total Gate Charge2 Qg - 4.0 - Gate-Source Charge Qgs - 1.2 - Gate-Drain Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Qgd - 1.0 Td(ON) - 6 - Tr - 12 - Td(OFF) - 18 - Tf - 10 Input Capacitance CISS - 320 - Output Capacitance COSS - 42 - Reverse Transfer Capacitance CRSS - 20 - mΩ TEST CONDITION VDS=60V, VGS=0V VGS=10V, ID=5A VGS=4.5V, ID=4.5A nC V GS=4.5V VDS=30V I D=4A nS VDD=30V V GS=10V I D=2.5A RG=6Ω, RL=12Ω pF VDS=30V VGS=0V f=1MHz V VGS=0V, I S=2.5A SOURCE-DRAIN DIODE CHARACTERISTICS Forward On Voltage2 VSD - - 1.2 Note: 1. Pulse width limited by Maximum junction temperature. 2. Pulse width≦300µS, Duty cycle≦2% 3. Surface mounted on 1 in2 copper pad of FR4 board; 120°C/W when mounted on m in, copper pad. 29-Jan-2010 Rev. A Page 1 of 3 SSM9973A Elektronische Bauelemente 5 A, 60V N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES 29-Jan-2010 Rev. A Page 2 of 3 SSM9973A Elektronische Bauelemente 5 A, 60V N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES 29-Jan-2010 Rev. A Page 3 of 3