SECOS SSM9973A

SSM9973A
5 A, 60V
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
SOT-223
DESCRIPTION
The SSM9973A provide the designer with the best combination of fast switching,
ruggedized design, low on-resistance and cost effectiveness.
The SOT-223 package is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC converters.
A
M
4
CB
Top View
1
2
K
L
3
E
FEATURES
D
Simply drive requirement
Super high density cell design for extremely low RDS(ON)
F
G
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
6.20
6.70
6.70
7.30
3.30
3.70
1.42
1.90
4.50
4.70
0.60
0.82
H
REF.
G
H
J
K
L
M
J
Millimeter
Min.
Max.
0.10
0.25
0.35
2.30 REF.
2.90
3.10
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
SYMBOL
RATING
Drain – Source Voltage
PARAMETER
VDS
60
V
Gate – Source Voltage
VGS
±20
V
5.0
A
4.0
A
Continuous Drain Current3, [email protected]
Pulsed Drain Current
TA = 25°C
ID
TA = 70°C
1,2
UNIT
IDM
10
A
Total Power Dissipation, TA = 25°C
PD
2.7
W
Maximum Junction – Ambient3
RθJA
45
°C/W
0.02
W/°C
150, -55~150
°C
Linear Derating Factor
Operating Junction & Storage Temperature Range
TJ, TSTG
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
SYMBOL
MIN
TYP
MAX
UNIT
Drain-Source Breakdown Voltage
PARAMETER
BVDSS
60
-
-
V
VGS=0V, ID =250µA
Gate Threshold Voltage
VGS(TH)
0.5
-
1.5
V
VDS= VGS, ID =250µA
Forward Transconductance
gFS
-
12
-
S
VDS=15V, ID=4A
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS=±20V
-
-
1
-
-
10
µA
V DS=60V, VGS=0V
-
-
115
-
-
125
Drain-Source
Current
Leakage TA = 25°C
TA = 70°C
Drain-Source On Resistance
IDSS
RDS(ON)
Total Gate Charge2
Qg
-
4.0
-
Gate-Source Charge
Qgs
-
1.2
-
Gate-Drain Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Qgd
-
1.0
Td(ON)
-
6
-
Tr
-
12
-
Td(OFF)
-
18
-
Tf
-
10
Input Capacitance
CISS
-
320
-
Output Capacitance
COSS
-
42
-
Reverse Transfer Capacitance
CRSS
-
20
-
mΩ
TEST CONDITION
VDS=60V, VGS=0V
VGS=10V, ID=5A
VGS=4.5V, ID=4.5A
nC
V GS=4.5V
VDS=30V
I D=4A
nS
VDD=30V
V GS=10V
I D=2.5A
RG=6Ω, RL=12Ω
pF
VDS=30V
VGS=0V
f=1MHz
V
VGS=0V, I S=2.5A
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On Voltage2
VSD
-
-
1.2
Note: 1. Pulse width limited by Maximum junction temperature. 2. Pulse width≦300µS, Duty cycle≦2%
3. Surface mounted on 1 in2 copper pad of FR4 board; 120°C/W when mounted on m in, copper pad.
29-Jan-2010 Rev. A
Page 1 of 3
SSM9973A
Elektronische Bauelemente
5 A, 60V
N-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
29-Jan-2010 Rev. A
Page 2 of 3
SSM9973A
Elektronische Bauelemente
5 A, 60V
N-Channel Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
29-Jan-2010 Rev. A
Page 3 of 3