SECOS SMG5406

SMG5406
3.6A , 30V , RDS(ON) 65 mΩ
Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SC-59
The SMG5406 utilized advanced processing
techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device. The
SMG5406 is universally used for all commercial-industrial
applications.
A
L
3
3
C B
Top View
1
1
2
K
E
2
FEATURES
D
Simple Drive Requirement
Small Package Outline
F
REF.
MARKING
A
B
C
D
E
F
5406
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
H
G
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
TOP VIEW
Leader Size
7 inch
1
3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
TA=25°C
2
Continuous Drain Current , [email protected]
3.6
ID
A
TA=70°C
Pulsed Drain Current
1
Power Dissipation
TA=25°C
2.8
IDM
10
A
PD
1.38
W
0.01
W / °C
-55~150
°C
90
°C / W
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient
2
RθJA
Notes:
1. Pulse width limited by Max. junction temperature.
2. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
SMG5406
3.6A , 30V , RDS(ON) 65 mΩ
Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
VGS=0, ID=250µA
Gate-Threshold Voltage
VGS(th)
1
-
3
V
VDS=VGS, ID=250µA
Gate-Body Leakage Current
IGSS
-
-
±100
nA
VGS=±20V
-
-
1
Drain-Source Leakage Current
IDSS
Drain-Source On-Resistance
1
Forward Transconductance
RDS(ON)
gfs
µA
-
-
10
-
-
65
VDS=24V, VGS=0
mΩ
-
-
90
-
11
-
VDS=30V, VGS=0
VGS=10V, ID=3.6A
VGS=4.5V, ID=2.8A
S
VDS=5V, ID=3.6A
Dynamic
1
Total Gate Charge
Qg
-
3
5
Gate-Source Charge
Qgs
-
0.8
-
Gate-Drain Charge
Qgd
-
1.8
-
Td(on)
-
5
-
Tr
-
9
-
Td(off)
-
11
-
Tf
-
2
-
Input Capacitance
Ciss
-
120
290
Output Capacitance
Coss
-
62
-
Reverse Transfer Capacitance
Crss
-
24
-
Rg
-
3.5
Turn-on Delay Time
1
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
nC
VDS=24V,
VGS=4.5V,
ID=2.5A
nS
VDS=15V,
VGS=10V,
RG=3.3Ω,
RD=15Ω,
ID=1A
pF
VGS=0,
VDS=25V,
f=1.0MHz
-
Ω
f=1.0MHz
Source-Drain Diode
Diode Forward Voltage
1
Reverse Recovery Time
1
Reverse Recovery Charge
VSD
-
-
1.0
V
IS=1A, VGS=0
TRR
-
7.5
-
ns
QRR
-
2.5
-
nC
IS=3.5A, VGS=0
dI/dt=100A/µs
Notes:
1. Pulse width≦300us, duty cycle≦2%.
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SMG5406
Elektronische Bauelemente
3.6A , 30V , RDS(ON) 65 mΩ
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SMG5406
Elektronische Bauelemente
3.6A , 30V , RDS(ON) 65 mΩ
Ω
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
15-Aug-2011 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4