AOD603A 60V Complementary MOSFET General Description The AOD603A uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Features N-Channel P-Channel VDS= 60V -60V ID= 13A (VGS=10V) -13A (VGS=-10V) RDS(ON) RDS(ON) < 60mΩ (VGS=10V) < 115mΩ (VGS=-10V) < 85mΩ (VGS=4.5V) < 150mΩ (VGS=-4.5V) D1 G1 D2 G2 S1 N-channel S2 P-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDS Parameter Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current Continuous Drain Current ID TC=100°C C IDM TA=25°C IDSM TA=70°C Max P-channel -60 Units V ±20 ±20 V 12 -12 9.5 -9.5 30 -30 3.5 -3 3 -2.5 A A Avalanche Current C IAS, IAR 19 25 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 18 31 mJ Power Dissipation B PD TC=100°C TA=25°C Power Dissipation A Thermal Characteristics Parameter N-channel Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Parameter P-channel Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State t ≤ 10s Steady-State Steady-State 27 42.5 13.5 21.5 W 2 2 1.3 1.3 TJ, TSTG -55 to 175 -55 to 175 °C Symbol Typ 19 50 4 Typ 19 50 2.5 Max 23 60 5.5 Max 23 60 3.5 Units °C/W °C/W °C/W Units °C/W °C/W °C/W PDSM TA=70°C Junction and Storage Temperature Range 1/11 Max N-channel 60 RθJA RθJC Symbol RθJA RθJC W www.freescale.net.cn AOD603A 60V Complementary MOSFET N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Max 60 V VDS=60V, VGS=0V 1 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 TJ=55°C 5 VDS=0V, VGS= ±20V VGS=10V, ID=12A nA 2.4 3 V 47 60 90 110 85 mΩ 1 V 12 A A Static Drain-Source On-Resistance VGS=4.5V, ID=8A 67 gFS Forward Transconductance VDS=5V, ID=12A 22 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance µA ±100 RDS(ON) TJ=125°C Units 0.74 mΩ S 360 450 540 pF 40 61 80 pF 16 27 40 pF 0.6 1.35 2 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 7.5 10 nC Qg(4.5V) Total Gate Charge 3.8 5 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time VGS=0V, VDS=30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=12A 1.2 nC Gate Drain Charge 1.9 nC Turn-On DelayTime 4.2 ns 3.4 ns VGS=10V, VDS=30V, RL=2.5Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs 27 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 30 16 ns 2 ns 35 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/11 www.freescale.net.cn AOD603A 60V Complementary MOSFET N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 20 10V 25 VDS=5V 7V 16 6V 20 5V 10 4.5V ID(A) ID (A) 12 15 8 125°C 4V 4 5 25°C VGS=3.5V 0 0 0 1 2 3 4 0 5 1 100 2.6 90 2.4 Normalized On-Resistance RDS(ON) (mΩ ) 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 80 2 70 60 50 40 VGS=10V VGS=10V ID=12A 2.2 2 17 5 2 10 1.8 1.6 1.4 VGS=4.5V ID=8A 1.2 1 0.8 30 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 160 1.0E+01 ID=12A 140 1.0E+00 120 1.0E-01 125°C IS (A) RDS(ON) (mΩ ) 40 100 80 25°C 1.0E-03 25°C 1.0E-04 60 1.0E-05 40 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/11 125°C 1.0E-02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOD603A 60V Complementary MOSFET N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS=30V ID=12A 700 8 Capacitance (pF) VGS (Volts) 600 6 4 Ciss 500 400 300 Coss 200 2 100 0 Crss 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 8 0 10 20 30 40 50 VDS (Volts) Figure 8: Capacitance Characteristics 60 200 1000.0 10µs 100.0 TJ(Max)=175°C TC=25°C 160 RDS(ON) limited 100µs 1ms 10ms DC 1.0 0.1 Power (W) ID (Amps) 10µs 10.0 0.0 0.1 80 40 TJ(Max)=175°C TC=25°C 0.01 17 5 2 10 120 1 10 VDS (Volts) 100 1000 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=5.5°C/W 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/11 www.freescale.net.cn AOD603A 60V Complementary MOSFET N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 TA=25°C 25 TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=150°C 10 TA=125°C 20 15 10 5 1 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 20 10000 15 1000 Power (W) Current rating ID(A) TA=25°C 10 17 5 2 10 100 10 5 1 0.00001 0 0 25 50 75 100 125 150 0.001 0.1 10 1000 0 18 175 TCASE (°C) Figure 14: Current De-rating (Note F) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 5/11 www.freescale.net.cn AOD603A 60V Complementary MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/11 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn AOD603A 60V Complementary MOSFET P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Conditions Min ID=-250µA, VGS=0V -60 Typ Max V VDS=-60V, VGS=0V -1 TJ=55°C -5 VDS=0V, VGS= ±20V ±100 VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 VGS=-10V, ID=-12A Units -2.1 -3 µA nA V A 91 115 150 180 VGS=-4.5V, ID=-8A 114 150 mΩ VDS=-5V, ID=-12A 12 -1 V -12 A pF RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current G TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance -0.76 mΩ S 760 960 1160 60 86 120 pF 20 38 55 pF 3.5 7 10 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12 15.8 20 nC Qg(4.5V) Total Gate Charge 5 7.4 9 nC Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time VGS=0V, VDS=-30V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-12A 3 nC Gate Drain Charge 3.5 nC Turn-On DelayTime 9 ns 10 ns 25 ns 11 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-30V, RL=2.5Ω, RGEN=3Ω IF=-12A, dI/dt=100A/µs trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs 27.5 30 35 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allow s it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 7/11 www.freescale.net.cn AOD603A 60V Complementary MOSFET P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 15 -10V VDS=-5V -5V 25 -7V -6V 12 -4.5V 9 -ID(A) -ID (A) 20 -4V 15 6 10 125°C -3.5V 25°C 3 5 VGS=-3V 0 0 0 1 2 3 4 0 5 1 2.2 210 2 Normalized On-Resistance 230 RDS(ON) (mΩ ) 190 170 VGS=-4.5V 130 110 90 VGS=-10V 70 0 5 10 15 3 4 5 6 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 150 2 VGS=-10V ID=-12A 1.8 17 5 2 10 VGS=-4.5V 1.6 1.4 1.2 ID=-8A 1 0.8 20 0 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 310 1.0E+01 ID=-12A 270 1.0E+00 230 1.0E-01 190 -IS (A) RDS(ON) (mΩ ) 40 125°C 150 25°C 1.0E-03 110 1.0E-04 25°C 1.0E-05 70 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 8/11 125°C 1.0E-02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOD603A 60V Complementary MOSFET P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400 10 VDS=-30V ID=-12A 1200 Ciss Capacitance (pF) -VGS (Volts) 8 6 4 1000 800 600 Coss 400 2 200 0 4 8 12 Qg (nC) Figure 7: Gate-Charge Characteristics 16 0 10 20 30 40 50 -VDS (Volts) Figure 8: Capacitance Characteristics 60 200 1000.0 10µs 100.0 TJ(Max)=175°C TC=25°C 160 10µs 10.0 RDS(ON) limited 100µs 1.0 1ms 10ms DC 0.1 Power (W) -ID (Amps) Crss 0 0 0.0 0.1 80 40 TJ(Max)=175°C TC=25°C 0.01 17 5 2 10 120 1 10 -VDS (Volts) 100 1000 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=3.5°C/W 1 0.1 PD Ton Single Pulse 0.01 0.00001 0.0001 T 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 9/11 www.freescale.net.cn AOD603A 60V Complementary MOSFET P-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 TA=25°C TA=100°C Power Dissipation (W) IAR (A) Peak Avalanche Current 100 TA=150°C 10 TA=125°C 1 40 30 20 10 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 20 10000 15 1000 Power (W) Current rating ID(A) TA=25°C 10 17 5 2 10 100 10 5 1 0.00001 0 0 25 50 75 100 125 150 0.001 0.1 10 1000 0 18 175 TCASE (°C) Figure 14: Current De-rating (Note F) Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 10/11 www.freescale.net.cn AOD603A 60V Complementary MOSFET Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig 11/11 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.freescale.net.cn