UH1A THRU 100V-200V Surface Mount Ultrafast Rectifiers UH1D 1.0A FEATURES • Low profile package • Ideal for automated placement • Oxide planar chip junction • Ultrafast recovery times for high frequency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Case: DO-214AC (SMA) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code UH1B UH1C UH1D HB HC HD 100 150 200 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (Fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range V ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. 0.90 0.96 1.05 0.70 0.76 0.90 7.5 1.0 25 13 25 21 30 S 0.8 - IRM 2.7 4.0 A Qrr 35 - nC CJ 17 - pF IF = 0.6 A IF = 1.0 A TA = 25 °C IF = 0.6 A IF = 1.0 A TA = 125 °C Reverse current (2) rated VR TA = 25 °C TA = 125 °C IR Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TA = 25 °C trr Instantaneous forward voltage (1) Typical reverse recovery time VF IF = 1.0 A, dI/dt = 50 A/µs, VR = 30 V, Irr = 0.1 IRM Typical softness factor (tb/ta) Typical reverse recovery current IF = 1.0 A, dI/dt = 200 A/µs, VR = 200 V Typical stored charge Typical junction capacitance E-mail: [email protected] 4.0 V, 1 MHz 1 of 2 TA = 125 °C UNIT V µA ns - Web Site: www.taychipst.com UH1A 100V-200V Surface Mount Ultrafast Rectifiers RATINGS AND CHARACTERISTIC CURVES UH1A Instantaneous Reverse Current (µA) Average Forward Rectified Current (A) 1.0 0.8 0.6 TL Measured at the Cathode Band Terminal 0.4 0.2 0 1.0A UH1D TA = 175 °C 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 0.01 95 105 115 125 135 145 155 165 10 175 20 30 40 60 50 70 80 90 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Figure 1. Maximum Forward Current Derating Curve Figure 4. Typical Reverse Characteristics 1.0 100 100 D = 0.3 D = 0.8 D = 0.5 Junction Capacitance (pF) 0.9 Average Power Loss (W) THRU UH1D 1000 1.2 0.8 D = 0.2 0.7 0.6 D = 1.0 D = 0.1 0.5 0.4 T 0.3 0.2 0.1 D = tp/T tp 0.8 1.0 0 0 0.2 0.4 0.6 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 1 0.1 1.2 1 10 100 Average Forward Current (A) Reverse Voltage (V) Figure 2. Forward Power Loss Characteristics Figure 5. Typical Junction Capacitance 100 1000 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) THRU TA = 125 °C 10 TA = 150 °C 1 TA = 175 °C TA = 100 °C 0.1 TA = 25 °C 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Junction to Ambient 100 10 1 0.01 1.8 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Transient Thermal Impedance E-mail: [email protected] 2 of 2 Web Site: www.taychipst.com