SMD Type Product specification FZT851 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A. +0.1 3.00-0.1 6 Amps continuous current, up to 20 Amps peak current. +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 Very low saturation voltages. 4 Excellent hFE characteristics specified up to 10 Amps. 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 150 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Peak pulse current IC 6 A Continuous collector current ICM 20 A Power dissipation Ptot 3 W Tj,Tstg -55 to +150 Operating and storage temperature range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification FZT851 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100ìA 150 V Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 60 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 6 V Collector Cut-Off Current ICBO VCB=120V VCB=120V,Ta = 100 Emitter Cut-Off Current IEBO VEB=6V 10 nA Collector-emitter saturation voltage * IC=0.1A, IB=5mA VCE(sat) IC=1A, IB=50mA IC=2A, IB=50mA IC=6A, IB=300mA 50 100 170 375 mV Base-emitter saturation voltage * VBE(sat) IC=6A, IB=300mA 1200 mV Base-Emitter Turn-On Voltage * VBE(on) IC=6A, VCE=1V 1150 mV Static Forward Current Transfer Ratio* Transitional frequency hFE fT IC=10mA, VCE=1V 100 200 IC=2A, VCE=1V* 100 200 IC=5A, VCE=1V* 75 120 IC=10A, VCE=1V* 25 50 1 nA ìA 300 50 IC=100mA, VCE=10V f=50MHz 130 MHz 45 pF Output capacitance Cobo VCB=10V, f=1MHz Turn-on time t(on) IC=1A, VCC=10V 45 ns Turn-off time t(off) IB1=IB2=100mA 1100 ns * Pulse test: tp = 300 ìs; d 0.02. Marking Marking FZT851 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2